CN101354514B - 液晶显示装置及具有该液晶显示装置的电子设备 - Google Patents

液晶显示装置及具有该液晶显示装置的电子设备 Download PDF

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Publication number
CN101354514B
CN101354514B CN2008101301299A CN200810130129A CN101354514B CN 101354514 B CN101354514 B CN 101354514B CN 2008101301299 A CN2008101301299 A CN 2008101301299A CN 200810130129 A CN200810130129 A CN 200810130129A CN 101354514 B CN101354514 B CN 101354514B
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semiconductor layer
conductive
island
liquid crystal
layer
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Expired - Fee Related
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CN2008101301299A
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English (en)
Chinese (zh)
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CN101354514A (zh
Inventor
宫口厚
冈本知广
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008101301299A 2007-07-26 2008-07-25 液晶显示装置及具有该液晶显示装置的电子设备 Expired - Fee Related CN101354514B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007194844 2007-07-26
JP2007-194844 2007-07-26
JP2007194844 2007-07-26

Publications (2)

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CN101354514A CN101354514A (zh) 2009-01-28
CN101354514B true CN101354514B (zh) 2012-04-25

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Country Status (5)

Country Link
US (2) US7633089B2 (enExample)
JP (2) JP5443711B2 (enExample)
KR (1) KR101506465B1 (enExample)
CN (1) CN101354514B (enExample)
TW (1) TWI437339B (enExample)

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US8101444B2 (en) * 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP2009267399A (ja) * 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
US20110274234A1 (en) * 2008-11-20 2011-11-10 Sharp Kabushiki Kaisha Shift register
EP2455931A4 (en) * 2009-07-15 2013-05-15 Sharp Kk SCREEN SIGNAL PLANT DRIVE SWITCHING AND DISPLAY DEVICE THEREFOR
JP5399163B2 (ja) * 2009-08-07 2014-01-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 表示装置
KR101969253B1 (ko) * 2009-10-08 2019-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101759504B1 (ko) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
KR102144432B1 (ko) * 2013-11-06 2020-08-13 엘지디스플레이 주식회사 플렉서블 표시 장치 및 커브드 표시 장치
TWI595296B (zh) * 2014-09-23 2017-08-11 元太科技工業股份有限公司 顯示器
CN104317089B (zh) * 2014-10-27 2017-02-01 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示面板、显示装置
KR102526110B1 (ko) 2016-04-12 2023-04-27 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN107728352B (zh) * 2017-11-22 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种像素驱动电路及液晶显示面板
WO2019135147A1 (ja) * 2018-01-05 2019-07-11 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
CN110642829A (zh) * 2019-10-14 2020-01-03 中材江苏太阳能新材料有限公司 一种含噻吩环的光电材料及其制备方法
CN110727151A (zh) * 2019-10-25 2020-01-24 京东方科技集团股份有限公司 阵列基板、显示面板、显示装置及驱动方法
JP7508336B2 (ja) * 2020-10-26 2024-07-01 株式会社ジャパンディスプレイ 半導体基板及び表示装置
US12062725B2 (en) * 2021-02-26 2024-08-13 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display device

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Publication number Publication date
US20100044713A1 (en) 2010-02-25
US20090026452A1 (en) 2009-01-29
JP2009049393A (ja) 2009-03-05
TW200916931A (en) 2009-04-16
CN101354514A (zh) 2009-01-28
KR101506465B1 (ko) 2015-03-27
US8044407B2 (en) 2011-10-25
JP5443711B2 (ja) 2014-03-19
US7633089B2 (en) 2009-12-15
TWI437339B (zh) 2014-05-11
JP2014102509A (ja) 2014-06-05
KR20090012120A (ko) 2009-02-02

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