CN103278990B - 像素结构及液晶面板 - Google Patents

像素结构及液晶面板 Download PDF

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CN103278990B
CN103278990B CN201310204168.XA CN201310204168A CN103278990B CN 103278990 B CN103278990 B CN 103278990B CN 201310204168 A CN201310204168 A CN 201310204168A CN 103278990 B CN103278990 B CN 103278990B
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film transistor
tft
thin film
dot structure
liquid crystal
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CN103278990A (zh
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王骁
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract

本发明公开了一种像素结构及液晶面板，所述像素结构包括数据线、像素电极和栅线，还包括串联于像素电极与数据线之间的至少两个薄膜晶体管，所述至少两个薄膜晶体管的栅极均连接于所述栅线。所述液晶面板为包括上述像素结构的液晶面板，本发明的像素结构及液晶面板，通过利用两个级连的薄膜晶体管替代现有技术的单薄膜晶体管，有效地减小关态电流，改善残像问题，提高液晶面板显示质量。

Description

像素结构及液晶面板
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种像素结构及液晶面板。
背景技术
随着液晶显示技术的飞速发展，液晶显示器已经成功应用于笔记本、监视器、电视等显示设备中。薄膜晶体管液晶显示器（TFT-LCD）是众多液晶显示器的一种。薄膜晶体管液晶显示器是指显示器的液晶面板上的每一液晶像素点都是由集成在其后的薄膜晶体管（TFT）来驱动，从而可以做到高速度、高亮度、高对比度地显示屏幕信息。
现有技术的TFT液晶面板的薄膜晶体管连接电路结构如图1所示，液晶面板的每个像素结构均包括数据线1、栅线2和像素电极3，所述数据线1和栅线2交叉部分处形成有薄膜晶体管9，薄膜晶体管9的栅极连接栅线2，源极连接数据线1，漏极连接像素电极3。上述电路结构的等效电路如图2所示，其中11为液晶电容Clc，12为存储电容Cst。
当薄膜晶体管9反向偏置的时候，由于自由电子的存在，自由电子附着在有源层上，从而导致漏极和源极会流过微小的电流，这个电流叫做关态电流Ioff，也习惯称为TFT像素结构的漏电流。在TFT像素结构设计时关态电流过大会引起一些问题，例如如果关态电流过大，对像素电压的保持特性带来一定的影响，当栅极关闭的时候保持电压损失过快，超过2个灰阶的时候，人眼就能分辨出变化，引起闪烁的现象；另一方面，如果关态电流过大，导致像素放电时残留的直流分量增加而引起电荷残留，从而产生残像。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是：提供一种能够有效减小关态电流，改善残像问题，提高液晶面板显示质量的像素结构及液晶面板。
（二）技术方案
为解决上述问题，本发明第一方面提供了一种像素结构，该像素结构除包括数据线、像素电极和栅线外，还包括串联于像素电极与数据线之间的至少两个薄膜晶体管，所述至少两个薄膜晶体管的栅极均连接于所述栅线。
在第一方面的第一种可能实现方式中，所述薄膜晶体管有两个，分别为第一薄膜晶体管和第二薄膜晶体管，所述第一薄膜晶体管的漏极与所述第二薄膜晶体管的源极相连，所述第一薄膜晶体管的源极与数据线相连，所述第二薄膜晶体管的漏极与像素电极相连。
在第一方面的第二种可能实现方式中，所述第一薄膜晶体管和第二薄膜晶体管在相同的工艺中同步形成。
在第一方面的第三种可能实现方式中，所述第一薄膜晶体管的漏极和源极、所述第二薄膜晶体管的漏极和源极、所述数据线均由源漏电极层形成，所述第一薄膜晶体管的有源层、所述第二薄膜晶体管的有源层均由半导体层形成，所述第一薄膜晶体管的栅极、所述第二薄膜晶体管的栅极、所述栅线均由栅线层形成。
在第一方面的第四种可能实现方式中，所述第一薄膜晶体管和第二薄膜晶体管为形状和尺寸相同的薄膜晶体管。
在第一方面的第五种可能实现方式中，所述第一薄膜晶体管和第二薄膜晶体管的位置与栅线或数据线的位置至少部分重叠。
在第一方面的第六种可能实现方式中，所述第一薄膜晶体管和第二薄膜晶体管的栅极由所述栅线构成，所述第一薄膜晶体管和第二薄膜晶体管的有源层和源极、漏极均形成于所述栅线上方。
在第一方面的第七种可能实现方式中，所述第一薄膜晶体管和第二薄膜晶体管的源极呈U形，漏极呈条状，并且源极的U形对漏极的一端形成半包围的布局。
在第一方面的第八种可能实现方式中，还包括连接各像素的公共电极的公共电极线。
第二方面，提供一种液晶面板，所述液晶面板的像素结构采用第一方面所述的像素结构，以提高液晶面板的显示质量。
（三）有益效果
本发明提出的像素结构和液晶面板，通过利用两个级连的薄膜晶体管替代现有技术的单薄膜晶体管，能够有效地减小关态电流，改善残像问题，提高液晶面板显示质量。
附图说明
图1为现有技术像素结构中薄膜晶体管连接电路结构示意图；
图2为现有技术像素结构中薄膜晶体管连接电路等效电路图；
图3为本发明的像素结构中双薄膜晶体管连接电路结构示意图；
图4为本发明的像素结构中双薄膜晶体管连接电路等效电路图；
图5为利用Smart Spice来仿真模拟单TFT电路的电路结构图；
图6为利用Smart Spice来仿真模拟双TFT电路的电路结构图。
具体实施方式
下面结合附图及实施例对本发明进行详细说明如下。
现有的薄膜晶体管液晶显示器（TFT-LCD）中的薄膜晶体管的主要参数有开启电流Ion、关态电流Ioff、漏源电压Vds、栅源电压Vgs和阈值电压VTH等，其中Ion、Ioff和VTH对像素的影响比较大。其中开启电流Ion的计算公式如下：
其中，W、L分别为薄膜晶体管的有源层所形成的通道宽度和长度，μn为等效电子迁移率，CSiNx为薄膜晶体管的电容，VTH为薄膜晶体管的阈值电压，VG和VD为薄膜晶体管的栅极和漏极相对于源极的电压。由上述公式可以看出，影响开启电流Ion的因素有通道宽度与长度的比值W/L、电子迁移率等。
而关态电流Ioff的计算公式为：
其中，q为电子电荷量，n为电子密度，μn为等效电子迁移率，ρ为空穴密度，μp为空穴迁移率，W、L分别为薄膜晶体管的有源层所形成的通道宽度和长度，VD为薄膜晶体管的漏极相对于源极的电压。
由此可见，影响关态电流Ioff的因素有通道宽度与长度的比值W/L等。因此，在像素设计时可以通过调整薄膜晶体管宽长比W/L来调整Ion、Ioff的大小。
本发明第一方面提出的像素结构除包括数据线、像素电极和栅线外，还包括串联于像素电极与数据线之间的至少两个薄膜晶体管，所述至少两个薄膜晶体管的栅极均连接于所述栅线。上述技术方案通过利用两个级连的薄膜晶体管替代现有技术的单薄膜晶体管，有效地减小了关态电流，改善了残像问题。
具体地，如图3所示，本发明一个实施例的像素结构除包括数据线1、像素电极3和栅线2外，还包括第一薄膜晶体管5和第二薄膜晶体管4，所述第一薄膜晶体管5的漏极与所述第二薄膜晶体管4的源极相连，所述第一薄膜晶体管5的源极与数据线1相连，所述第二薄膜晶体管4的漏极通过过孔6与像素电极3相连。
图3所示的像素结构的等效电路如图4所示，其中11为液晶电容Clc，12为存储电容Cst。从图4可以看出，本发明利用两个级连的薄膜晶体管取代现有技术的一个薄膜晶体管。此像素结构设计的优点在于，通过控制沟道长度让两个相同的薄膜晶体管级连，当栅线2开启的时候，两个薄膜晶体管同时打开，由于两个薄膜晶体管与一个薄膜晶体管的开启电流Ion大小一样，对数据线1的电压没有太大影响，而当栅线2关闭的时候，经过两个薄膜晶体管的反向偏置，大大减小了关态电流Ioff，大大改善了残像问题，提高了液晶面板的显示品质。
所述第一薄膜晶体管5和第二薄膜晶体管4可以在相同的工艺中同步形成。
在本发明的一个实施例中，所述第一薄膜晶体管5的漏极和源极、所述第二薄膜晶体管4的漏极和源极、所述数据线1均由源漏电极层形成，所述第一薄膜晶体管5的有源层、所述第二薄膜晶体管4的有源层均由半导体层形成，所述第一薄膜晶体管5的栅极、所述第二薄膜晶体管4的栅极、所述栅线均由栅线层形成。
当然地，所述第一薄膜晶体管5和第二薄膜晶体管4为形状和尺寸相同的薄膜晶体管时，两薄膜晶体管的开启电流相同，在不改变开启电流的情况下减小关态电流，产生的效果最佳。
为了减小对像素结构的开口率的影响，可以采取如下手段：
一、所述第一薄膜晶体管和第二薄膜晶体管的栅极由所述栅线构成，所述第一薄膜晶体管和第二薄膜晶体管的有源层和源极、漏极均形成于所述栅线上方。
二、所述第一薄膜晶体管和第二薄膜晶体管的位置与栅线或数据线的位置至少部分重叠。
三、所述第一薄膜晶体管和第二薄膜晶体管的源极呈U形，漏极呈条状，并且源极的U形对漏极的一端形成半包围的布局。
当然地，本发明的像素结构还可以包括连接各像素的公共电极的公共电极线。
本发明的像素结构用于大尺寸的薄膜晶体管液晶显示器时，由于像素结构的大尺寸，即使级连两个薄膜晶体管也不会对像素结构的开口率产生较大影响，产生的技术效果最好。
作为对本发明提出的像素结构减小关态电流Ioff的技术效果的进一步验证，本发明利用Smart Spice软件仿真模拟检验了单TFT电路和双TFT电路下对Ion和Ioff的影响效果。其中，单TFT电路的模拟电路图如图5所示，双TFT电路的模拟电路图如图6所示，其中VG为电源电压，得到的模拟结果如下：
一、Ion≈6uA时
当VG=27V时：
单TFT电路中，W/L=68/9.8，Ion=5.981,
双TFT电路中，W/L=68/4.9，Ion=5.986；
当VG=-8V时：
单TFT电路中，Ioff=19.915pA；
双TFT电路中，Ioff=10.307pA；
二、Ion≈7uA时
当VG=27V时：
单TFT电路中，W/L=80/9.8，Ion=7.036；
双TFT电路中，W/L=68/4.9，Ion=7.042；
当VG=-8V时：
单TFT电路中，Ioff=23.429pA；
双TFT电路中，Ioff=12.125pA；
由上述模拟结果可看出，通过调整沟道长度L可以使得双TFT与单TFT电路的开启电流Ion基本相同，关态电流Ioff减小一半左右。
由模拟结果可看出，将两个相同的TFT设计在像素的栅线上，通过控制沟道长度L控制Ion大小相等，对像素结构的开口率影响不大，不影响正常液晶面板的显示，而且能实现Ioff减小的效果。
从上述实施例及模拟实验可以看出，采用上述实施例的像素结构能够有效地减小关态电流，改善残像问题。进而，采用该像素结构的液晶面板的能够产生比普通液晶面板更好的显示效果。这里，所述液晶面板可以采用各种各样的显示模式，例如扭曲向列（TN）模式、垂直取向（VA）模式、平面内切换（IPS）模式、高级超维场切换（ADS）模式等。
此外，尽管上述具体实施例中，为了描述方便，而以薄膜晶体管的源极与数据线相连，而薄膜晶体管的漏极与像素电极相连为例进行了说明，然而，本领域的技术人员应当明白，对于薄膜晶体管，其源极和漏极有构成上的互换性，也可以将源极与像素电极相连而将漏极与数据线相连，这属于上述实施例的等同变换。
而且，尽管上述具体实施例中，以两个薄膜晶体管串联的情形进行了说明，然而，本发明不限于两个薄膜晶体管串联，还可以是更多个薄膜晶体管的串联。
以上实施方式仅用于说明本发明，而并非对本发明的限制，有关技术领域的普通技术人员，在不脱离本发明的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应由权利要求限定。

Claims (7)

1.一种像素结构，包括数据线、像素电极和栅线，其特征在于，还包括串联于像素电极与数据线之间的至少两个薄膜晶体管，所述至少两个薄膜晶体管的栅极均连接于所述栅线；
所述薄膜晶体管有两个，分别为第一薄膜晶体管和第二薄膜晶体管，所述第一薄膜晶体管的漏极与所述第二薄膜晶体管的源极相连，所述第一薄膜晶体管的源极与数据线相连，所述第二薄膜晶体管的漏极通过过孔与像素电极相连；
所述第一薄膜晶体管和第二薄膜晶体管的源极呈U形，漏极呈条状，并且源极的U形对漏极的一端形成半包围的布局，所述第一薄膜晶体管和所述第二薄膜晶体管的源极的U型开口的朝向是相互垂直的；
所述第一薄膜晶体管和第二薄膜晶体管的位置与栅线或数据线的位置至少部分重叠。
2.如权利要求1所述的像素结构，其特征在于，所述第一薄膜晶体管和第二薄膜晶体管在相同的工艺中同步形成。
3.如权利要求1所述的像素结构，其特征在于，所述第一薄膜晶体管的漏极和源极、所述第二薄膜晶体管的漏极和源极、所述数据线均由源漏电极层形成，所述第一薄膜晶体管的有源层、所述第二薄膜晶体管的有源层均由半导体层形成，所述第一薄膜晶体管的栅极、所述第二薄膜晶体管的栅极、所述栅线均由栅线层形成。
4.如权利要求1所述的像素结构，其特征在于，所述第一薄膜晶体管和第二薄膜晶体管为形状和尺寸相同的薄膜晶体管。
5.如权利要求1所述的像素结构，其特征在于，所述第一薄膜晶体管和第二薄膜晶体管的栅极由所述栅线构成，所述第一薄膜晶体管和第二薄膜晶体管的有源层和源极、漏极均形成于所述栅线上方。
6.如权利要求1所述的像素结构，其特征在于，还包括连接各像素的公共电极的公共电极线。
7.一种液晶面板，其特征在于，所述液晶面板的像素结构采用权利要求1-6任一所述的像素结构。
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103278990B (zh) 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板
US9425221B2 (en) * 2014-01-31 2016-08-23 Sharp Laboratories Of America, Inc. Circuit-on-wire
CN107505791A (zh) * 2017-09-22 2017-12-22 惠科股份有限公司 阵列基板和显示面板
CN109917595B (zh) * 2017-12-12 2021-01-22 京东方科技集团股份有限公司 像素结构及其驱动方法、显示面板、显示装置
TWI683427B (zh) * 2018-08-15 2020-01-21 友達光電股份有限公司 畫素結構
CN110794631B (zh) 2019-11-21 2022-09-30 京东方科技集团股份有限公司 子像素结构、液晶面板及反射式液晶显示设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1435805A (zh) * 2002-01-29 2003-08-13 三洋电机株式会社 驱动电路和包括该驱动电路的显示设备
CN102456314A (zh) * 2010-10-25 2012-05-16 群康科技(深圳)有限公司 显示装置及具有显示装置的电子设备
CN203241672U (zh) * 2013-05-28 2013-10-16 京东方科技集团股份有限公司 像素结构及液晶面板

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3274081B2 (ja) * 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
JP2004126199A (ja) * 2002-10-02 2004-04-22 Toppoly Optoelectronics Corp 液晶ディスプレイのディスプレイ回路構造
KR100531410B1 (ko) * 2003-04-15 2005-11-28 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치의 어레이 기판 및 그의 제조 방법
KR200382468Y1 (ko) * 2004-01-08 2005-04-20 인터디지탈 테크날러지 코포레이션 무선 근거리 통신망에서의 채널 통신여부 평가 최적화
US7443821B2 (en) 2004-01-08 2008-10-28 Interdigital Technology Corporation Method for clear channel assessment optimization in a wireless local area network
JP2006189473A (ja) * 2004-12-28 2006-07-20 Koninkl Philips Electronics Nv アクティブマトリックス型液晶表示装置
KR20060080761A (ko) * 2005-01-06 2006-07-11 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR101211086B1 (ko) * 2006-02-03 2012-12-12 삼성디스플레이 주식회사 박막 트랜지스터 기판과 이의 제조 방법 및 박막트랜지스터 기판 제조용 마스크
US7719008B2 (en) 2006-02-03 2010-05-18 Samsung Electronics Co., Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
KR101359915B1 (ko) * 2006-09-08 2014-02-07 삼성디스플레이 주식회사 액정표시장치
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
CN101738846B (zh) * 2008-11-17 2012-02-29 北京京东方光电科技有限公司 掩模板及其制备方法
CN101750809B (zh) * 2008-12-03 2012-02-22 上海天马微电子有限公司 液晶显示面板
CN101825814B (zh) * 2009-03-04 2012-05-30 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN202282354U (zh) * 2011-04-21 2012-06-20 京东方科技集团股份有限公司 一种薄膜晶体管及显示装置
TWI448796B (zh) * 2011-07-06 2014-08-11 Au Optronics Corp 畫素結構、主動元件陣列基板以及平面顯示面板
KR101929363B1 (ko) * 2011-11-30 2018-12-17 삼성디스플레이 주식회사 액정 표시 장치
CN103278990B (zh) * 2013-05-28 2017-08-25 京东方科技集团股份有限公司 像素结构及液晶面板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1435805A (zh) * 2002-01-29 2003-08-13 三洋电机株式会社 驱动电路和包括该驱动电路的显示设备
CN102456314A (zh) * 2010-10-25 2012-05-16 群康科技(深圳)有限公司 显示装置及具有显示装置的电子设备
CN203241672U (zh) * 2013-05-28 2013-10-16 京东方科技集团股份有限公司 像素结构及液晶面板

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