KR100938887B1 - 액정표시장치용 어레이기판과 그 제조방법 - Google Patents
액정표시장치용 어레이기판과 그 제조방법 Download PDFInfo
- Publication number
- KR100938887B1 KR100938887B1 KR1020030043961A KR20030043961A KR100938887B1 KR 100938887 B1 KR100938887 B1 KR 100938887B1 KR 1020030043961 A KR1020030043961 A KR 1020030043961A KR 20030043961 A KR20030043961 A KR 20030043961A KR 100938887 B1 KR100938887 B1 KR 100938887B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- layer
- gate
- forming
- substrate
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Abstract
Description
Claims (8)
- 기판 상에 일 끝단에 게이트 패드를 포함하는 게이트 배선을 형성하는 단계와;상기 게이트 배선과 게이트 패드가 형성된 기판의 전면에 제 1 절연막을 형성하는 단계와;상기 게이트 배선과 수직하게 교차하면서 일 끝단에 데이터 패드를 포함하는 데이터 배선을 형성하는 단계와;상기 게이트 배선과 데이터 배선의 교차지점에, 게이트 전극과 반도체층과 소스 전극과 드레인 전극을 포함하는 박막트랜지스터를 형성하는 단계와;상기 박막트랜지스터 상부와, 게이트 배선과 데이터 배선의 상부에 위치하며 상기 드레인 전극의 일측을 노출시키는 블랙매트릭스를 형성하는 단계와;상기 블랙매트릭스가 형성된 기판의 전면에 제 2 절연막을 형성하는 단계와;상기 제 2 절연막과 그 하부의 제 1 절연막을 식각하여, 상기 드레인 전극의 일측과 화소영역과, 상기 게이트 패드와 데이터 패드를 노출하는 단계와;상기 제 2 절연막이 형성된 기판의 전면에 제 1 투명 전극층을 형성하는 단계와;상기 제 1 투명전극층의 상부에 절연막인 버퍼층을 형성하는 단계와;상기 화소영역에 대응하는 상기 버퍼층의 상부에 컬러필터를 형성하는 단계와;상기 컬러필터 사이로 노출된 상기 버퍼층을 기판의 전면에 대해 제거하는 단계와;상기 버퍼층이 제거된 기판의 전면에 제 2 투명 전극층을 형성하는 단계와;상기 제 1 및 제 2 투명 전극층을 동시에 패턴하여, 상기 드레인 전극과 접촉하면서 화소영역 마다 독립적으로 패턴된 이중층의 화소전극과, 상기 노출된 게이트 패드와 접촉하는 이중층의 게이트 패드전극과, 상기 노출된 데이터 패드와 접촉하는 이중층의 데이터 패드 전극을 형성하는 단계를 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 액티브층은 순수 비정질 실리콘으로 형성되고, 상기 오믹 콘택층은 불순물이 포함된 비정질 실리콘층으로 형성된 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 게이트 배선의 상부에 상기 화소전극과 접촉하는 아일랜드 형상의 금속층을 더욱 형성하여 이를 제 1 전극으로 하고, 그 하부의 게이트 배선을 제 2 전극으로 하는 보조 용량부를 형성하는 단계를 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 박막트랜지스터와 블랙매트릭스 사이에 무기 절연층을 형성하는 단계를 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 컬러필터는 상기 화소영역에 적색과 녹색과 청색의 컬러필터가 각각 대응되도록 형성된 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 화소전극은 인듐-틴-옥사이드(ITO)와 인듐-징크-옥사이드(IZO)를 포함하는 투명 도전성 금속그룹 중 선택된 하나로 형성된 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 버퍼층은 질화 실리콘(SiNX) 또는 산화 실리콘(SiO2)을 포함하는 무기절 연물질 그룹 중 선택된 하나로 형성된 액정표시장치용 어레이기판 제조방법.
- 제 1 항에 있어서,상기 버퍼층의 두께는 300~500Å인 액정표시장치용 어레이기판 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030043961A KR100938887B1 (ko) | 2003-06-30 | 2003-06-30 | 액정표시장치용 어레이기판과 그 제조방법 |
US10/880,274 US7075110B2 (en) | 2003-06-30 | 2004-06-29 | Method of fabricating array substrate having color filter on thin film transistor structure |
US11/438,500 US7439089B2 (en) | 2003-06-30 | 2006-05-22 | Method of fabricating array substrate having color filter on thin film transistor structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030043961A KR100938887B1 (ko) | 2003-06-30 | 2003-06-30 | 액정표시장치용 어레이기판과 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050003245A KR20050003245A (ko) | 2005-01-10 |
KR100938887B1 true KR100938887B1 (ko) | 2010-01-27 |
Family
ID=33536431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030043961A KR100938887B1 (ko) | 2003-06-30 | 2003-06-30 | 액정표시장치용 어레이기판과 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7075110B2 (ko) |
KR (1) | KR100938887B1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100995020B1 (ko) * | 2003-12-27 | 2010-11-19 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR101143005B1 (ko) * | 2004-12-14 | 2012-05-08 | 삼성전자주식회사 | 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법 |
CN1327480C (zh) * | 2005-01-26 | 2007-07-18 | 广辉电子股份有限公司 | 一种像素结构与薄膜晶体管及其制造方法 |
JP2007183629A (ja) * | 2005-12-29 | 2007-07-19 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示基板及びその製造方法 |
TWI305420B (en) * | 2006-06-20 | 2009-01-11 | Au Optronics Corp | Thin film transistor array substrate and method for fabricating the same |
US7633089B2 (en) * | 2007-07-26 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device provided with the same |
KR20090080790A (ko) * | 2008-01-22 | 2009-07-27 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 제조하는 방법 |
TWI343496B (en) * | 2008-07-07 | 2011-06-11 | Au Optronics Corp | Method for fabricating pixel structure |
TWI328862B (en) * | 2008-07-07 | 2010-08-11 | Au Optronics Corp | Method for fabricating pixel structure |
KR101285637B1 (ko) * | 2008-12-26 | 2013-07-12 | 엘지디스플레이 주식회사 | 전기영동 표시장치용 어레이 기판과 그 제조 방법 및 리페어 방법 |
KR101834560B1 (ko) * | 2011-12-01 | 2018-03-07 | 삼성디스플레이 주식회사 | 표시패널 및 표시패널용 표시기판의 제조방법 |
CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
CN102751240B (zh) * | 2012-05-18 | 2015-03-11 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制造方法、显示面板、显示装置 |
KR20140094880A (ko) * | 2013-01-23 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN103913884A (zh) * | 2013-06-28 | 2014-07-09 | 上海天马微电子有限公司 | 一种彩膜基板及其制造方法、显示面板 |
CN103676354B (zh) * | 2013-12-06 | 2016-03-23 | 合肥京东方光电科技有限公司 | 电极结构及制备方法、阵列基板及制备方法和显示装置 |
CN103676386B (zh) * | 2013-12-27 | 2016-10-05 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
CN103996683B (zh) * | 2014-05-29 | 2015-02-18 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
CN104062786B (zh) * | 2014-07-01 | 2017-07-28 | 深圳市华星光电技术有限公司 | 液晶显示器的连接垫结构及其制作方法 |
KR102322240B1 (ko) | 2015-04-28 | 2021-11-08 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 리페어 방법 |
KR20170035408A (ko) * | 2015-09-22 | 2017-03-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR102531673B1 (ko) * | 2016-04-07 | 2023-05-12 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
US10790311B2 (en) * | 2018-01-22 | 2020-09-29 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display substrate |
CN113066802B (zh) * | 2021-03-19 | 2023-04-18 | 合肥京东方显示技术有限公司 | 一种显示基板的制备方法、显示基板和显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862629A (ja) * | 1994-08-16 | 1996-03-08 | Toshiba Corp | 液晶表示装置 |
KR20020046559A (ko) * | 2000-12-15 | 2002-06-21 | 구본준, 론 위라하디락사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3240858B2 (ja) * | 1994-10-19 | 2001-12-25 | ソニー株式会社 | カラー表示装置 |
KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
JP3651613B2 (ja) * | 1995-11-29 | 2005-05-25 | 三洋電機株式会社 | 表示装置および表示装置の製造方法 |
CN1148600C (zh) * | 1996-11-26 | 2004-05-05 | 三星电子株式会社 | 薄膜晶体管基片及其制造方法 |
WO1999010862A1 (fr) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Afficheur a matrice active |
TW538279B (en) * | 1998-10-23 | 2003-06-21 | Hitachi Ltd | A reflective color liquid crystal display apparatus |
KR100857133B1 (ko) * | 2002-06-28 | 2008-09-05 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 및 그 제조방법 |
KR100904757B1 (ko) * | 2002-12-30 | 2009-06-29 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 제조방법 |
KR100936954B1 (ko) * | 2002-12-31 | 2010-01-14 | 엘지디스플레이 주식회사 | 반사투과형 액정표시장치와 그 제조방법 |
KR100945442B1 (ko) * | 2003-02-28 | 2010-03-05 | 엘지디스플레이 주식회사 | 씨오티 구조 반투과형 액정표시장치 |
KR100659912B1 (ko) * | 2003-12-03 | 2006-12-20 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR101177720B1 (ko) * | 2005-09-20 | 2012-08-28 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
-
2003
- 2003-06-30 KR KR1020030043961A patent/KR100938887B1/ko active IP Right Grant
-
2004
- 2004-06-29 US US10/880,274 patent/US7075110B2/en active Active
-
2006
- 2006-05-22 US US11/438,500 patent/US7439089B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862629A (ja) * | 1994-08-16 | 1996-03-08 | Toshiba Corp | 液晶表示装置 |
KR20020046559A (ko) * | 2000-12-15 | 2002-06-21 | 구본준, 론 위라하디락사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20060216843A1 (en) | 2006-09-28 |
US20040266041A1 (en) | 2004-12-30 |
US7075110B2 (en) | 2006-07-11 |
KR20050003245A (ko) | 2005-01-10 |
US7439089B2 (en) | 2008-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100938887B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100857133B1 (ko) | 액정표시장치용 어레이기판 및 그 제조방법 | |
KR100870700B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
JP5351388B2 (ja) | 表示装置 | |
KR100726132B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100870701B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
US7248323B2 (en) | Liquid crystal display of horizontal electric field applying type and fabricating method thereof | |
KR100930920B1 (ko) | 씨오티 구조 액정표시장치 및 그 제조방법 | |
KR100887671B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100682358B1 (ko) | 액정 표시 패널 및 제조 방법 | |
KR100955382B1 (ko) | 액정표시장치 및 그 제조방법 | |
KR100566816B1 (ko) | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 | |
US20070029551A1 (en) | Thin film transistor substrate using a horizontal electric field | |
JP4727201B2 (ja) | 水平電界型の液晶表示パネル | |
KR100560405B1 (ko) | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 | |
KR101056012B1 (ko) | 액정표시장치 및 그 제조방법 | |
KR101012718B1 (ko) | 액정표시장치용 어레이기판 제조방법 | |
KR20040050237A (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100942265B1 (ko) | 씨오티 구조 액정표시장치 및 제조방법 | |
KR100538327B1 (ko) | 수평 전계 인가형 박막 트랜지스터 어레이 기판 및 그제조 방법 | |
KR100560400B1 (ko) | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 | |
KR100930918B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100918279B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
KR100870699B1 (ko) | 어레이 기판 및 이를 구비한 액정표시장치 | |
KR100443538B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121228 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20131227 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20141230 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20151228 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20161214 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20171218 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20181226 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20191212 Year of fee payment: 11 |