CN103996683B - 阵列基板及其制作方法和显示装置 - Google Patents

阵列基板及其制作方法和显示装置 Download PDF

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CN103996683B
CN103996683B CN201410234336.4A CN201410234336A CN103996683B CN 103996683 B CN103996683 B CN 103996683B CN 201410234336 A CN201410234336 A CN 201410234336A CN 103996683 B CN103996683 B CN 103996683B
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electrode
photoresist
layer
active layer
region
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CN103996683A (zh
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孙双
崔承镇
牛菁
张方振
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201410234336.4A priority Critical patent/CN103996683B/zh
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Priority to US14/443,474 priority patent/US9627421B2/en
Priority to PCT/CN2014/088079 priority patent/WO2015180357A1/zh
Priority to EP14861123.9A priority patent/EP3151279B1/en
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    • H01L27/1259—Multistep manufacturing methods
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Abstract

本发明提供一种阵列基板及其制作方法和显示装置，包括：像素电极，像素电极包括显示区域部分和非显示区域部分；形成在像素电极的非显示区域上的第一电极；形成在像素电极和第一电极上的钝化层，钝化层包括位于第一电极之上的过孔；形成在钝化层上的有源层和第二电极，有源层通过钝化层的过孔连接第一电极。本发明降低了制作成本，减少了对电极材料的腐蚀，提高了阵列基板的质量。

Description

阵列基板及其制作方法和显示装置
技术领域
本发明涉及显示技术领域，尤其涉及阵列基板及其制作方法和显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid CrystalDisplay，TFT-LCD)由于具有体积小、功耗低、无辐射等特点而备受关注，在平板显示领域中占据了主导地位，被广泛的应用到各行各业中。
TFT-LCD根据驱动液晶的电场方向可分为垂直电场型与水平电场型。垂直电场型包括扭曲向列型，水平电场型包括高级超维场转换(ADvanced Super Dimension Switch，ADS)型和共平面切换(In-PlaneSwitching，IPS)型。其中，水平电场型TFT-LCD，尤其是ADS型TFT-LCD具有宽视角，开口率高等优点而被广泛的应用。例如，为了进一步提高透过率，一种高透过率-高级超维场转换((high transmittance-Advanced Super Dimension Switch，HADS)模式TFT-LCD正在不断的被研究和使用。
然而制造HADS模式TFT-LCD阵列基板构图次数比较多，量产中一般采用六次构图工艺。形成如图1所示的结构：通过第一次构图工艺在玻璃基板1上形成栅极2和栅线的图形；沉积栅极绝缘层3，通过第二次构图工艺形成有源层4的图形；通过第三次构图工艺形成数据线，以及源极6、漏极7和TFT沟道的图形；通过第四次构图工艺形成像素电极8的图形；通过第五次构图工艺形成钝化层9图形；通过第六次构图工艺形成公共电极10图形。如果有源层4使用金属氧化物，为了保护金属氧化物免受外界环境的影响，一般还要在有源层4之后，源极6和漏极7之前，加上一层刻蚀保护层5，因此又会增加一次构图工艺，因此掩模板使用数量比较多，成本比较高。
另外，为了减少信号延迟，TFT-LCD的源漏层的导电材料一般使用低电阻材料，如铜，但是现有的HADS技术中，通常是在制作完成源极6和漏极7之后，再进行像素电极8的ITO构图工艺，但是ITO(氧化铟锡)刻蚀液会对铜有接触和腐蚀，从而使Cu的电学特性变差。
发明内容
(一)要解决的技术问题
本发明提供一种阵列基板及其制作方法和显示装置，以解决现有技术的TFT-LCD阵列基板制作工艺繁琐，成本较高且源漏层的导电材料在制作中易被腐蚀的技术问题。
(二)技术方案
为解决上述技术问题，本发明提供一种阵列基板，包括：像素电极，所述像素电极包括显示区域部分和非显示区域部分；形成在所述像素电极的非显示区域上的第一电极；形成在所述像素电极和所述第一电极上的钝化层，所述钝化层包括位于所述第一电极之上的过孔；形成在所述钝化层上的有源层和第二电极，所述有源层通过所述钝化层的过孔连接所述第一电极。
进一步地，所述阵列基板还包括：
公共电极，所述公共电极位于所述钝化层上，为所述有源层对应所述像素电极的显示区域部分经等离子体处理后形成。
进一步地，所述阵列基板还包括：
形成在所述有源层和第二电极上的刻蚀保护层。
进一步地，所述阵列基板还包括：
形成在玻璃基板上的栅极和栅线，形成在所述栅极和栅线上的栅绝缘层，所述栅绝缘层上形成有所述像素电极。
进一步地，
所述第一电极为源极，所述第二电极为漏极；
或，所述第一电极为漏极，所述第二电极为源极。
进一步地，
所述栅极、第一电极和/或第二电极的材料为铜或铜合金。
进一步地，
所述第二电极的位置不与所述第一电极重叠。
另一方面，本发明还提供一种显示装置，包括如上任一项所述的阵列基板。
再一方面，本发明还提供一种阵列基板制作方法，包括：形成包括像素电极和第一电极的图形，所述像素电极包括显示区域部分和非显示区域部分，所述第一电极位于所述像素电极的非显示区域上；
在所述像素电极和第一电极上形成钝化层的图形，所述钝化层包括位于所述第一电极之上的过孔；
在所述钝化层上形成包括有源层和第二电极的图形，所述有源层通过所述钝化层的过孔连接所述第一电极。
进一步地，所述方法还包括：
对所述有源层对应所述像素电极的显示区域部分进行等离子体处理，使其金属化，形成公共电极。
进一步地，所述方法还包括：
在所述有源层和所述第二电极上形成刻蚀保护层的图形。
进一步地，所述方法还包括：
在玻璃基板上形成包括栅极和栅线的图形，在所述栅极和所述栅线上形成栅绝缘层的图形，所述栅绝缘层上形成像素电极。
进一步地，所述形成包括像素电极和第一电极的图形具体包括：
依次形成透明导电层薄膜和第一电极层薄膜；
在所述第一电极层薄膜上涂第一光刻胶并使用灰度掩膜板曝光显影，形成第一光刻胶完全保留区域，第一光刻胶半保留区域和第一光刻胶完全去除区域，所述第一光刻胶完全保留区域对应预形成第一电极区域，所述第一光刻胶半保留区域对应预形成像素电极的显示区域部分的区域，所述第一光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉所述第一光刻胶完全去除区域的第一电极层薄膜和透明导电层薄膜，对第一光刻胶进行灰化处理，使得第一光刻胶完全保留区域的光刻胶变薄，第一光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第一光刻胶半保留区域的第一电极层薄膜；
剥离光刻胶，形成包括像素电极和第一电极的图形。
进一步地，所述在所述钝化层上形成包括有源层和第二电极的图形包括：
在所述钝化层上依次形成有源层薄膜和第二电极层薄膜；
在所述第二电极层薄膜上涂第二光刻胶并使用灰度掩膜板曝光显影后，形成第二光刻胶完全保留区域，第二光刻胶半保留区域和第二光刻胶完全去除区域，所述第二光刻胶完全保留区域对应预形成第二电极区域和数据线区域，所述第二光刻胶半保留区域对应预形成有源层区域，所述第二光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉所述第二光刻胶完全去除区域的第二电极层薄膜和有源层薄膜，对第二光刻胶进行灰化处理，使得第二光刻胶完全保留区域的光刻胶变薄，第二光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第二光刻胶半保留区域的第二电极层薄膜；
剥离光刻胶，形成包括第二电极、数据线和有源层的图形。
进一步地，
所述栅极、第一电极和/或第二电极的材料为铜或铜合金。
进一步地，
所述第二电极的位置不与所述第一电极重叠。
进一步地，
所述第一电极为源极，第二电极为漏极；
或，所述第一电极为漏极，第二电极为源极。
(三)有益效果
可见，在本发明实施例的阵列基板及其制作方法和显示装置中，作为源极和漏极的第一电极和第二电极形成在作为像素电极的ITO材料上方，从而在刻蚀ITO材料时导电材料的绝大部分表面均覆盖有光刻胶保护，避免了导电材料与ITO材料刻蚀液接触，大大减少了刻蚀液对导电材料的腐蚀作用，提高了阵列基板的质量。
另外，在本发明提供的阵列基板及其制作方法和显示装置中，仅需通过5次MASK工艺即可制成TFT-LCD阵列基板，与现有技术的6次或7次MASK工艺相比，节省了制作时间，降低了制作成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中HADS模式TFT-LCD阵列基板结构示意图；
图2是本发明实施例阵列基板的基本结构示意图；
图3是本发明实施例阵列基板的一种优选结构示意图；
图4是本发明实施例阵列基板制作方法的基本流程示意图；
图5是本发明实施例1阵列基板制作方法的流程示意图；
图6是本发明实施例1中第一次光刻刻蚀后形成结构示意图；
图7是本发明实施例1中第二次光刻刻蚀后形成结构示意图；
图8是本发明实施例1中第三次光刻刻蚀后形成结构示意图；
图9是本发明实施例1中第四次光刻刻蚀后形成结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例首先提供一种阵列基板，参见图2，包括：像素电极8，像素电极8包括显示区域部分a和非显示区域部分b；形成在像素电极8的非显示区域b上的第一电极6；形成在像素电极8和第一电极6上的钝化层9，钝化层9包括位于第一电极6之上的过孔11；形成在钝化层9上的有源层4和第二电极7，有源层4通过钝化层9的过孔11连接第一电极6。
优选地，阵列基板还可以包括：公共电极10，见图3，位于钝化层9上，为有源层4对应像素电极8的显示区域部分经等离子体处理后形成，呈狭缝状。
优选地，阵列基板还可以包括：形成在有源层4和第二电极7上的刻蚀保护层5。
本发明实施例中，阵列基板可以为顶栅结构，也可以为底栅结构。当本实施例中的阵列基板为底栅结构时，优选地，阵列基板还可以包括：形成在玻璃基板1上的栅极2和栅线，形成在栅极2和栅线上的栅绝缘层3，栅绝缘层3上形成有像素电极8。
优选地，第一电极6和第二电极7可以分别为源极和漏极。
优选地，栅极2、第一电极6、第二电极7的材料可以为铜或铜合金，以减少阵列基板的信号延迟。
优选地，第二电极7的位置可以不与第一电极6重叠。
本发明实施例还提供一种显示装置，包括如上任一项所述的阵列基板。
本发明实施例还提供一种阵列基板制作方法，参见图4，包括：
步骤401：形成包括像素电极和第一电极的图形，所述像素电极包括显示区域部分和非显示区域部分，所述第一电极位于所述像素电极的非显示区域上。
步骤402：在所述像素电极和第一电极上形成钝化层的图形，所述钝化层包括位于第一电极之上的过孔。
步骤403：在所述钝化层上形成包括有源层和第二电极的图形，所述有源层通过所述钝化层的过孔连接所述第一电极。
优选地，方法还可以包括：对有源层对应像素电极的显示区域部分进行等离子体处理，使其金属化，形成公共电极。
优选地，方法还可以包括：在有源层和第二电极上形成刻蚀保护层的图形。
优选地，方法还可以包括：在玻璃基板上形成包括栅极和栅线的图形，在栅极和栅线上形成栅绝缘层的图形，栅绝缘层上形成像素电极。
优选地，可以通过一次光刻胶曝光显影和两次刻蚀以形成包括像素电极和第一电极的图形，具体地，步骤可以为：
依次形成透明导电层薄膜和第一电极层薄膜；
在第一电极层薄膜上涂第一光刻胶并使用灰度掩膜板曝光显影，形成第一光刻胶完全保留区域，第一光刻胶半保留区域和第一光刻胶完全去除区域，第一光刻胶完全保留区域对应预形成第一电极区域，第一光刻胶半保留区域对应预形成像素电极的显示区域部分的区域，第一光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉第一光刻胶完全去除区域的第一电极层薄膜和透明导电层薄膜，对第一光刻胶进行灰化处理，使得第一光刻胶完全保留区域的光刻胶变薄，第一光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第一光刻胶半保留区域的第一电极层薄膜；
剥离光刻胶，形成包括像素电极和第一电极的图形。
优选地，还可以通过一次光刻胶曝光显影和两次刻蚀以形成包括有源层、第二电极和数据线的图形，具体地，步骤是：
在钝化层上依次形成有源层薄膜和第二电极层薄膜；
在第二电极层薄膜上涂第二光刻胶并使用灰度掩膜板曝光显影后，形成第二光刻胶完全保留区域，第二光刻胶半保留区域和第二光刻胶完全去除区域，第二光刻胶完全保留区域对应预形成第二电极区域和数据线区域，第二光刻胶半保留区域对应预形成有源层区域，上述有源层区域可以包括预形成公共电极的部分，第二光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉第二光刻胶完全去除区域的第二电极层薄膜和有源层薄膜，对第二光刻胶进行灰化处理，使得第二光刻胶完全保留区域的光刻胶变薄，第二光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第二光刻胶半保留区域的第二电极层薄膜；
剥离光刻胶，形成包括第二电极、数据线和有源层的图形，此时有源层还包括预形成公共电极的区域，这部分区域可以经后续的等离子处理后金属化，直接形成公共电极，以减少制作步骤。
优选地，第一电极和第二电极可以分别为源极和漏极。
优选地，栅极、第一电极、第二电极的材料可以为铜或铜合金，以减少阵列基板的信号延迟。
优选地，第二电极的位置可以不与第一电极重叠。
实施例1：
本发明实施例1提供一种TFT-LCD阵列基板制作方法，以详细说明本发明实施例的具体实现过程，参见图5：
步骤501：在玻璃基板上沉积栅极薄膜，通过光刻刻蚀形成包括栅极和栅线的图形，以及公共电极的连接电极。
本步骤中，所沉积的栅极薄膜的材料为铜。在玻璃基板的栅极薄膜上使用普通掩膜曝光、显影，然后刻蚀，形成栅极2和栅线的图形，以及公共电极10的连接电极。见图6。
步骤502：沉积栅极绝缘层薄膜、透明导电层薄膜和漏极层薄膜，通过光刻刻蚀形成包括栅极绝缘层、像素电极和漏极的图形。
本步骤中，首先分别沉积栅极绝缘层薄膜、透明导电层薄膜和漏极层薄膜，其中栅极绝缘层薄膜所用材料为SiNx，透明导电层薄膜所用材料为ITO，漏极层薄膜所用材料为铜。
在漏极层薄膜上涂第一光刻胶并使用灰度掩膜板曝光显影后，形成第一光刻胶完全保留区域，第一光刻胶半保留区域和第一光刻胶完全去除区域，其中第一光刻胶完全保留区域对应预形成漏极区域，对应像素电极的非显示区域，第一光刻胶半保留区域对应预形成像素电极的显示区域部分的区域，第一光刻胶完全去除区域对应除上述区域之外的区域。
进行一次刻蚀，刻蚀掉第一光刻胶完全去除区域的漏极层薄膜和透明导电层薄膜，对第一光刻胶进行灰化处理，使得第一光刻胶完全保留区域的光刻胶变薄，第一光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第一光刻胶半保留区域的漏极层薄膜。
最后剥离光刻胶，形成包括栅绝缘层3，像素电极8和漏极6的图形，见图7。
步骤503：沉积钝化层薄膜，通过光刻刻蚀在栅极绝缘层、像素电极和漏极上形成钝化层的图形，其中钝化层包括位于漏极之上的过孔。
本步骤中，首先沉积钝化层薄膜，所用材料为SiNx。
然后使用普通掩膜板进行光刻刻蚀，形成钝化层9的图形。
其中，钝化层9包括过孔11，过孔11在漏极6之上，对应有源层4和漏极6接触的位置，栅线接口位置以及公共电极10与连接电极连接的位置，见图8。
步骤504：沉积有源层薄膜和源极层薄膜，通过光刻刻蚀形成包括有源层、源极和数据线的图形。
本步骤中，首先在钝化层上分别沉积有源层薄膜和源极层薄膜，有源层薄膜所用材料为IGZO，源极层薄膜材料为铜。
在源极层薄膜上涂第二光刻胶并使用灰度掩膜板曝光显影后，形成第二光刻胶完全保留区域，第二光刻胶半保留区域和第二光刻胶完全去除区域，第二光刻胶完全保留区域对应预形成源极区域和数据线区域，本实施例中源极区域的位置不与漏极重叠，在本发明的其他实施例中源极位置也可以与漏极重叠。第二光刻胶半保留区域对应预形成有源层区域，此处有源层区域还包括预形成公共电极和栅线接口的区域，对应像素电极的显示区域，第二光刻胶完全去除区域对应除上述区域之外的区域。
进行一次刻蚀，刻蚀掉第二光刻胶完全去除区域的源极层薄膜和有源层薄膜，对第二光刻胶进行灰化处理，使得第二光刻胶完全保留区域的光刻胶变薄，第二光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第二光刻胶半保留区域的源极层薄膜。
剥离光刻胶，形成包括源极7和有源层4的图形，其中源极7与数据线连接，有源层4通过过孔11与漏极6相连，见图9。
步骤505：沉积刻蚀保护层薄膜，通过光刻刻蚀形成刻蚀保护层的图形，并对有源层对应像素电极的显示区域的部分进行等离子体处理，使其金属化，形成公共电极图形和与栅线连接的导电材料。
本步骤中，刻蚀保护层薄膜的材料为SiO2，在沉积刻蚀保护层薄膜后使用普通掩膜板进行光刻刻蚀，形成刻蚀保护层5的图形。然后，对暴露在表面的位于预形成公共电极区域的IGZO有源层材料进行等离子体处理，使其金属化，形成公共电极10图形和位于栅线接口过孔内连接栅线的导电材料，最终形成的阵列基板即如图3所示。
至此，则完成了本发明实施例HADS模式TFT-LCD阵列基板制作方法的全过程。
可见，本发明实施例至少具有如下有益效果：
在本发明实施例的阵列基板及其制作方法和显示装置中，作为源极和漏极的第一电极和第二电极形成在作为像素电极的ITO材料上方，从而使得在刻蚀ITO材料时导电材料的绝大部分表面均覆盖有光刻胶保护，避免了导电材料与ITO材料刻蚀液接触，大大减少了刻蚀液对导电材料的腐蚀作用，提高了阵列基板的质量。
另外，在本发明提供的阵列基板及其制作方法和显示装置中，仅需通过5次MASK工艺即可制成TFT-LCD阵列基板，与现有技术的6次或7次MASK工艺相比，节省了制作时间，降低了制作成本。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
可以理解，执行本发明所披露的制造方法的操作步骤的顺序不限于这里阐述的，除非具体地另外提及。因此，执行本发明所披露的制造方法的操作步骤的顺序可以在本发明的范围内变化，且对于本发明相关领域的普通技术人员显而易见的结果也将被认为在本发明的范围内。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (17)

1.一种阵列基板，其特征在于，包括：像素电极，所述像素电极包括显示区域部分和非显示区域部分；形成在所述像素电极的非显示区域上的第一电极；形成在所述像素电极和所述第一电极上的钝化层，所述钝化层包括位于所述第一电极之上的过孔；形成在所述钝化层上的有源层和第二电极，所述有源层通过所述钝化层的过孔连接所述第一电极。
2.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
公共电极，所述公共电极位于所述钝化层上，为所述有源层对应所述像素电极的显示区域部分经等离子体处理后形成。
3.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
形成在所述有源层和第二电极上的刻蚀保护层。
4.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
形成在玻璃基板上的栅极和栅线，形成在所述栅极和栅线上的栅绝缘层，所述栅绝缘层上形成有所述像素电极。
5.根据权利要求1所述的阵列基板，其特征在于：
所述第一电极为源极，所述第二电极为漏极；
或，所述第一电极为漏极，所述第二电极为源极。
6.根据权利要求4所述的阵列基板，其特征在于：
所述栅极、第一电极和/或第二电极的材料为铜或铜合金。
7.根据权利要求1所述的阵列基板，其特征在于：
所述第二电极的位置不与所述第一电极重叠。
8.一种显示装置，其特征在于，包括如权利要求1-7中任一项所述的阵列基板。
9.一种阵列基板制作方法，其特征在于，包括：形成包括像素电极和第一电极的图形，所述像素电极包括显示区域部分和非显示区域部分，所述第一电极位于所述像素电极的非显示区域上；
在所述像素电极和第一电极上形成钝化层的图形，所述钝化层包括位于所述第一电极之上的过孔；
在所述钝化层上形成包括有源层和第二电极的图形，所述有源层通过所述钝化层的过孔连接所述第一电极。
10.根据权利要求9所述的阵列基板制作方法，其特征在于，所述方法还包括：
对所述有源层对应所述像素电极的显示区域部分进行等离子体处理，使其金属化，形成公共电极。
11.根据权利要求9所述的阵列基板制作方法，其特征在于，所述方法还包括：
在所述有源层和所述第二电极上形成刻蚀保护层的图形。
12.根据权利要求9所述的阵列基板制作方法，其特征在于，所述方法还包括：
在玻璃基板上形成包括栅极和栅线的图形，在所述栅极和所述栅线上形成栅绝缘层的图形，所述栅绝缘层上形成像素电极。
13.根据权利要求9所述的阵列基板制作方法，其特征在于，所述形成包括像素电极和第一电极的图形具体包括：
依次形成透明导电层薄膜和第一电极层薄膜；
在所述第一电极层薄膜上涂第一光刻胶并使用灰度掩膜板曝光显影，形成第一光刻胶完全保留区域，第一光刻胶半保留区域和第一光刻胶完全去除区域，所述第一光刻胶完全保留区域对应预形成第一电极区域，所述第一光刻胶半保留区域对应预形成像素电极的显示区域部分的区域，所述第一光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉所述第一光刻胶完全去除区域的第一电极层薄膜和透明导电层薄膜，对第一光刻胶进行灰化处理，使得第一光刻胶完全保留区域的光刻胶变薄，第一光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第一光刻胶半保留区域的第一电极层薄膜；
剥离光刻胶，形成包括像素电极和第一电极的图形。
14.根据权利要求9所述的阵列基板制作方法，其特征在于，所述在所述钝化层上形成包括有源层和第二电极的图形包括：
在所述钝化层上依次形成有源层薄膜和第二电极层薄膜；
在所述第二电极层薄膜上涂第二光刻胶并使用灰度掩膜板曝光显影后，形成第二光刻胶完全保留区域，第二光刻胶半保留区域和第二光刻胶完全去除区域，所述第二光刻胶完全保留区域对应预形成第二电极区域和数据线区域，所述第二光刻胶半保留区域对应预形成有源层区域，所述第二光刻胶完全去除区域对应除上述区域之外的区域；
进行一次刻蚀，刻蚀掉所述第二光刻胶完全去除区域的第二电极层薄膜和有源层薄膜，对第二光刻胶进行灰化处理，使得第二光刻胶完全保留区域的光刻胶变薄，第二光刻胶半保留区域的光刻胶被完全去除，然后进行二次刻蚀，刻蚀掉第二光刻胶半保留区域的第二电极层薄膜；
剥离光刻胶，形成包括第二电极、数据线和有源层的图形。
15.根据权利要求12所述的阵列基板制作方法，其特征在于：
所述栅极、第一电极和/或第二电极的材料为铜或铜合金。
16.根据权利要求9所述的阵列基板制作方法，其特征在于：
所述第二电极的位置不与所述第一电极重叠。
17.根据权利要求9至16中任一项所述的阵列基板制作方法，其特征在于：
所述第一电极为源极，第二电极为漏极；
或，所述第一电极为漏极，第二电极为源极。
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