CN106783889A - 显示基板及其制备方法、显示装置 - Google Patents

显示基板及其制备方法、显示装置 Download PDF

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CN106783889A
CN106783889A CN201710024600.5A CN201710024600A CN106783889A CN 106783889 A CN106783889 A CN 106783889A CN 201710024600 A CN201710024600 A CN 201710024600A CN 106783889 A CN106783889 A CN 106783889A
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electrode
electrode line
display base
base plate
insulating barrier
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CN106783889B (zh
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张俊
史高飞
周如
占建英
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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Abstract

本发明公开了一种显示基板及其制备方法、显示装置，所述显示基板包括显示区域和周边区域，周边区域设置有第一电极线，第一电极线上设置有绝缘层，绝缘层上对应第一电极线所在的位置设置有第一过孔，第一过孔中设置有接触电极，绝缘层上设置有第二电极线，第二电极线通过接触电极与第一电极线电连接。本发明提供的技术方案在第一电极线与第二电极线之间设置接触电极，在对第二电极线进行刻蚀去除时接触电极可以对第一电极线进行保护，使得刻蚀液不会对第一电极线进行破坏。因此，本发明提供的技术方案在不影响第一电极线与第二电极线进行搭接的前提之下，避免对第二电极线进行刻蚀去除时损伤第一电极线，从而节约了生产成本，提高了生产效率。

Description

显示基板及其制备方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种显示基板及其制备方法、显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，简称TFT-LCD)具有体积小、功耗低、无辐射、制造成本低等特点，在当前的平板显示器市场占据了主导地位。随着产品PPI的提高和边框的减小，现有技术在显示器的周边区域通常使用绝缘层接触孔来实现不同金属层中信号线的搭接。然而，由于两层信号线的材料相同或相近，且直接搭接，导致在后续工艺需要对其中一层金属层刻蚀去除时，刻蚀液会侵蚀另一金属层，从而对该金属层造成损伤，甚者使得该金属被完全剥离。
发明内容
为解决上述问题，本发明提供一种显示基板及其制备方法、显示装置，至少部分解决现有显示基板的周边区域，由于不同金属层中信号线的材料相同或相近，且直接搭接，导致其中一层金属层难以剥离的问题。
为此，本发明提供一种显示基板，包括显示区域和周边区域，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。
可选的，所述接触电极在所述显示基板上的正投影至少覆盖所述第一过孔的底部在所述衬底基板上的正投影。
可选的，所述接触电极的材料包括金属氧化物。
可选的，所述第二电极线上设置有钝化层，所述钝化层上设置有第二过孔，所述钝化层上设置有公共电极，所述公共电极通过所述第二过孔与所述第二电极线连接。
本发明还提供一种显示装置，包括任一所述的显示基板。
本发明还提供一种显示基板的制备方法，包括：
在衬底基板上沉积第一金属层；
通过一次构图工艺在显示区域形成栅极以及在周边区域形成第一电极线；
沉积绝缘层；
通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔；
沉积导电材料层；
通过一次构图工艺在所述显示区域形成像素电极以及在所述周边区域的第一过孔中形成接触电极；
沉积第二金属层；
通过一次构图工艺在所述显示区域形成源漏极以及在所述周边区域的绝缘层上形成第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。
可选的，所述接触电极的材料包括金属氧化物。
可选的，所述通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔的步骤之前包括：
通过构图工艺在所述显示区域形成半导体层。
可选的，还包括：
在所述第二电极线上形成钝化层，所述钝化层上设置有第二过孔；
在所述钝化层上形成公共电极，所述公共电极通过所述第二过孔与所述第二电极线连接。
可选的，所述接触电极在所述衬底基板上的正投影至少覆盖所述第一过孔的底部在所述衬底基板上的正投影。
本发明具有下述有益效果：
本发明提供的显示基板及其制备方法、显示装置之中，所述显示基板包括显示区域和周边区域，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。本发明提供的技术方案在第一电极线与第二电极线之间设置接触电极，由于接触电极覆盖在第一过孔中，对第二电极线进行刻蚀去除时接触电极可以对第一电极线进行保护，使得刻蚀液不会对第一电极线进行破坏。因此，本发明提供的技术方案在不影响第一电极线与第二电极线进行搭接的前提之下，避免对第二电极线进行剥离时损伤第一电极线，从而节约了生产成本，提高了生产效率。
附图说明
图1为本发明实施例一提供的一种显示基板的结构示意图；
图2为实施例一中形成接触电极的示意图；
图3为本发明实施例三提供的一种显示基板的制备方法的流程图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的显示基板及其制备方法、显示装置进行详细描述。
实施例一
图1为本发明实施例一提供的一种显示基板的结构示意图。如图1所示，所述显示基板包括衬底基板100，所述衬底基板100包括显示区域和周边区域，所述周边区域设置有第一电极线101，所述第一电极线101上设置有绝缘层102，所述绝缘层102上对应所述第一电极线101所在的位置设置有第一过孔，所述第一过孔中设置有接触电极103，所述绝缘层102上设置有第二电极线104，所述第二电极线104通过所述接触电极103与所述第一电极线101电连接。可选的，所述接触电极103的材料包括金属氧化物、石墨烯等导电材料。本实施例提供的技术方案在第一电极线101与第二电极线104之间设置接触电极，由于接触电极覆盖在第一过孔的底部，对第二电极线104进行刻蚀去除时接触电极可以对第一电极线101进行保护，使得刻蚀液不会对第一电极线101进行破坏。因此，本实施例提供的技术方案在不影响第一电极线101与第二电极线104进行搭接的前提之下，避免对第二电极线104进行刻蚀去除时损伤第一电极线101，从而节约了生产成本，提高了生产效率。
在本发明的一种实施例中，第一电极线和第二电极线在显示基板上的正投影不重合，即具有夹角。
图2为实施例一中形成接触电极的示意图。如图2所示，所述接触电极103在所述衬底基板100上的正投影至少覆盖所述第一过孔201的底部在所述衬底基板100上的正投影。本实施例通过一次构图工艺在所述显示区域形成像素电极以及在所述周边区域的第一过孔201中形成接触电极103，此时本实施例使用的的像素电极掩膜板203在所述周边区域保留第一过孔处的接触电极103，使得接触电极103覆盖在第一过孔的底部。为了保证接触电极103能够完全覆盖第一过孔的底部，本实施例要求所述接触电极103在所述衬底基板100上的投影长度大于所述第一过孔201的底部在所述衬底基板100上的投影长度。所述接触电极103在所述衬底基板100上的投影长度为D1，所述第一过孔201的底部在所述衬底基板100上的投影长度为D2。因此，本实施例要求D 1大于D2。由于接触电极103能够完全覆盖在第一过孔201的底部，因此本实施例对第二电极线104进行刻蚀去除时接触电极103可以对第一电极线101进行更好的保护，使得刻蚀液不会对第一电极线101进行破坏。
参见图1，所述第二电极线104上设置有钝化层105，所述钝化层105上设置有第二过孔202，所述钝化层105上设置有公共电极106，所述公共电极106通过所述第二过孔202与所述第二电极线104连接。本实施例中，所述第一电极线101为栅金属层，所述第二电极线104为源漏金属层。因此本实施例对源漏金属进行刻蚀去除时接触电极103可以对栅金属进行更好的保护，使得刻蚀液不会对栅金属进行破坏。
本实施例提供的显示基板包括衬底基板，所述衬底基板包括显示区域和周边区域，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。本实施例提供的技术方案在第一电极线与第二电极线之间设置接触电极，由于接触电极覆盖在第一过孔的底部，对第二电极线进行刻蚀去除时接触电极可以对第一电极线进行保护，使得刻蚀液不会对第一电极线进行破坏。因此，本实施例提供的技术方案在不影响第一电极线与第二电极线进行搭接的前提之下，避免对第二电极线进行刻蚀去除时损伤第一电极线，从而节约了生产成本，提高了生产效率。
实施例二
本实施例提供一种显示装置，包括实施例一提供的显示基板，具体内容可参照实施例一的描述，此处不再赘述。
本实施例提供的显示装置之中，所述显示基板包括衬底基板，所述衬底基板包括显示区域和周边区域，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。本实施例提供的技术方案在第一电极线与第二电极线之间设置接触电极，由于接触电极覆盖在第一过孔的底部，对第二电极线进行刻蚀去除时接触电极可以对第一电极线进行保护，使得刻蚀液不会对第一电极线进行破坏。因此，本实施例提供的技术方案在不影响第一电极线与第二电极线进行搭接的前提之下，避免对第二电极线进行刻蚀去除时损伤第一电极线，从而节约了生产成本，提高了生产效率。
实施例三
图3为本发明实施例三提供的一种显示基板的制备方法的流程图。如图3所示，所述显示基板的制备方法包括：
步骤1001、在衬底基板上沉积第一金属层。
步骤1002、通过一次构图工艺在显示区域形成栅极以及在周边区域形成第一电极线。
步骤1003、沉积绝缘层。
步骤1004、通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔。
优选的，所述通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔的步骤之前包括：通过构图工艺在所述显示区域形成半导体层。参见图1，本实施例在衬底基板100上形成第一金属层，通过一次构图工艺在显示区域形成栅极以及在周边区域形成第一电极线101，在所述栅极和所述第一电极线101上形成绝缘层。在所述显示区域的绝缘层上形成半导体层，在所述周边区域的绝缘层102上对应所述第一电极线101所在的位置形成第一过孔201。
步骤1005、沉积导电材料层。
步骤1006、通过一次构图工艺在所述显示区域形成像素电极以及在所述周边区域的第一过孔中形成接触电极。
步骤1007、沉积第二金属层。
步骤1008、通过一次构图工艺在所述显示区域形成源漏极以及在所述周边区域的绝缘层上形成第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。
所述接触电极的材料可以是金属氧化物、石墨烯等导电材料。本实施例中，所述接触电极的材料与像素电极的材料相同，为氧化铟锡。本实施例在绝缘层上形成金属氧化物层，通过构图工艺形成像素电极和接触电极103，所述像素电极设置在所述显示区域的绝缘层上，所述接触电极103设置在所述周边区别的第一过孔的底部。在所述接触电极103上形成第二金属层，通过构图工艺形成源漏极和第二电极线104，所述源漏极设置在所述显示区域的半导体层上，所述第二电极线104设置在所述周边区域的绝缘层上，所述第二电极线104通过所述接触电极与所述第一电极线101电连接。
参见图2，所述接触电极103在所述衬底基板100上的正投影至少覆盖所述第一过孔201的底部在所述衬底基板100上的正投影。本实施例通过一次构图工艺在所述显示区域形成像素电极以及在所述周边区域的第一过孔201中形成接触电极103，此时本实施例使用的的像素电极掩膜板203在所述周边区域保留第一过孔处的接触电极103，使得接触电极103覆盖在第一过孔的底部。为了保证接触电极103能够完全覆盖第一过孔的底部，本实施例要求所述接触电极103在所述衬底基板100上的投影长度大于所述第一过孔201的底部在所述衬底基板100上的投影长度。所述接触电极103在所述衬底基板100上的投影长度为D1，所述第一过孔201的底部在所述衬底基板100上的投影长度为D2。因此，本实施例要求D1大于D2。由于接触电极103能够完全覆盖在第一过孔201的底部，因此本实施例对第二电极线104进行刻蚀去除时接触电极103可以对第一电极线101进行更好的保护，使得刻蚀液不会对第一电极线101进行破坏。
参见图1，本实施例在所述第二电极线104上形成钝化层105，所述钝化层105上形成第二过孔202，所述钝化层105上形成公共电极106，所述公共电极106通过所述第二过孔202与所述第二电极线104连接。本实施例中，所述第一电极线101为栅金属层，所述第二电极线104为源漏金属层。因此本实施例对源漏金属进行刻蚀去除时接触电极103可以对栅金属进行更好的保护，使得刻蚀液不会对栅金属进行破坏。
本实施例提供的显示基板的制备方法之中，所述显示基板包括衬底基板，所述衬底基板包括显示区域和周边区域，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。本实施例提供的技术方案在第一电极线与第二电极线之间设置接触电极，由于接触电极覆盖在第一过孔的底部，对第二电极线进行刻蚀去除时接触电极可以对第一电极线进行保护，使得刻蚀液不会对第一电极线进行破坏。因此，本实施例提供的技术方案在不影响第一电极线与第二电极线进行搭接的前提之下，避免对第二电极线进行刻蚀去除时损伤第一电极线，从而节约了生产成本，提高了生产效率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种显示基板，包括显示区域和周边区域，其特征在于，所述周边区域设置有第一电极线，所述第一电极线上设置有绝缘层，所述绝缘层上对应所述第一电极线所在的位置设置有第一过孔，所述第一过孔中设置有接触电极，所述绝缘层上设置有第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。
2.根据权利要求1所述的显示基板，其特征在于，所述接触电极在所述显示基板上的正投影至少覆盖所述第一过孔的底部在所述衬底基板上的正投影。
3.根据权利要求1所述的显示基板，其特征在于，所述接触电极的材料包括金属氧化物。
4.根据权利要求1-3任一所述的显示基板，其特征在于，所述第二电极线上设置有钝化层，所述钝化层上设置有第二过孔，所述钝化层上设置有公共电极，所述公共电极通过所述第二过孔与所述第二电极线连接。
5.一种显示装置，其特征在于，包括权利要求1-4任一所述的显示基板。
6.一种显示基板的制备方法，其特征在于，包括：
在衬底基板上沉积第一金属层；
通过一次构图工艺在显示区域形成栅极以及在周边区域形成第一电极线；
沉积绝缘层；
通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔；
沉积导电材料层；
通过一次构图工艺在所述显示区域形成像素电极以及在所述周边区域的第一过孔中形成接触电极；
沉积第二金属层；
通过一次构图工艺在所述显示区域形成源漏极以及在所述周边区域的绝缘层上形成第二电极线，所述第二电极线通过所述接触电极与所述第一电极线电连接。
7.根据权利要求6所述的显示基板的制备方法，其特征在于，所述接触电极的材料包括金属氧化物。
8.根据权利要求6所述的显示基板的制备方法，其特征在于，所述通过构图工艺在所述周边区域的绝缘层上对应所述第一电极线所在的位置形成第一过孔的步骤之前包括：
通过构图工艺在所述显示区域形成半导体层。
9.根据权利要求6-8任一所述的显示基板的制备方法，其特征在于，还包括：
在所述第二电极线上形成钝化层，所述钝化层上设置有第二过孔；
在所述钝化层上形成公共电极，所述公共电极通过所述第二过孔与所述第二电极线连接。
10.根据权利要求6所述的显示基板的制备方法，其特征在于，所述接触电极在所述衬底基板上的正投影至少覆盖所述第一过孔的底部在所述衬底基板上的正投影。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546234A (zh) * 2017-08-24 2018-01-05 京东方科技集团股份有限公司 显示装置、阵列基板及其制备方法
CN108761933A (zh) * 2018-05-28 2018-11-06 武汉华星光电技术有限公司 阵列基板、液晶显示器及阵列基板的制造方法
CN112928124A (zh) * 2019-12-06 2021-06-08 群创光电股份有限公司 连接结构及包括其的显示装置
WO2023226050A1 (zh) * 2022-05-27 2023-11-30 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277510B (zh) * 2019-06-27 2021-03-23 京东方科技集团股份有限公司 一种显示面板及其制备方法、以及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140159059A1 (en) * 2012-12-10 2014-06-12 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
CN103928530A (zh) * 2013-05-09 2014-07-16 上海天马微电子有限公司 氧化物薄膜晶体管阵列基板及其制造方法
CN105161505A (zh) * 2015-09-28 2015-12-16 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板
CN105425492A (zh) * 2016-01-06 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制备方法
US20160380004A1 (en) * 2015-06-25 2016-12-29 Samsung Display Co., Ltd. Thin film transistor substrate and display device including the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158635A1 (en) * 2005-02-23 2008-07-03 Pixtronix, Inc. Display apparatus and methods for manufacture thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140159059A1 (en) * 2012-12-10 2014-06-12 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
CN103928530A (zh) * 2013-05-09 2014-07-16 上海天马微电子有限公司 氧化物薄膜晶体管阵列基板及其制造方法
US20160380004A1 (en) * 2015-06-25 2016-12-29 Samsung Display Co., Ltd. Thin film transistor substrate and display device including the same
CN105161505A (zh) * 2015-09-28 2015-12-16 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板
CN105425492A (zh) * 2016-01-06 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制备方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546234A (zh) * 2017-08-24 2018-01-05 京东方科技集团股份有限公司 显示装置、阵列基板及其制备方法
CN107546234B (zh) * 2017-08-24 2020-02-21 京东方科技集团股份有限公司 显示装置、阵列基板及其制备方法
CN108761933A (zh) * 2018-05-28 2018-11-06 武汉华星光电技术有限公司 阵列基板、液晶显示器及阵列基板的制造方法
CN108761933B (zh) * 2018-05-28 2021-07-27 武汉华星光电技术有限公司 阵列基板、液晶显示器及阵列基板的制造方法
CN112928124A (zh) * 2019-12-06 2021-06-08 群创光电股份有限公司 连接结构及包括其的显示装置
CN112928124B (zh) * 2019-12-06 2023-05-26 群创光电股份有限公司 连接结构及包括其的显示装置
WO2023226050A1 (zh) * 2022-05-27 2023-11-30 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

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