CN205384420U - 显示基板和显示装置 - Google Patents

显示基板和显示装置 Download PDF

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CN205384420U
CN205384420U CN201620023460.0U CN201620023460U CN205384420U CN 205384420 U CN205384420 U CN 205384420U CN 201620023460 U CN201620023460 U CN 201620023460U CN 205384420 U CN205384420 U CN 205384420U
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insulating barrier
electrode
transparency electrode
layer
base plate
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蔡振飞
王文杰
郝静
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to PCT/CN2016/099429 priority patent/WO2017118096A1/zh
Priority to US15/532,470 priority patent/US10411044B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • GPHYSICS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1296Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40Arrangements for improving the aperture ratio
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50Protective arrangements

Abstract

本实用新型涉及一种显示基板,包括:基底;数据线,设置在所述基底之上;第一绝缘层,设置在所述数据线之上;第二绝缘层,设置在所述第一绝缘层之上;第一透明电极,设置在所述第二绝缘层之上。根据本实用新型的技术方案,数据线和第一透明电极之间相隔两层绝缘层,在其中的一层绝缘层中存在导电颗粒的情况下,不会将数据线和第一透明电极导通。通过将第二透明电极设置在基底上,使得第一透明电极与第二透明电极之间至少相隔三层绝缘层,在其中的一层或两层绝缘层中存在导电颗粒的情况下,不会将第一透明电极与第二透明电极导通。从而减少了数据线与第一透明电极层、第一透明电极层与第二透明电极层之间的短路情况。

Description

显示基板和显示装置
技术领域
本实用新型涉及显示技术领域,具体而言,涉及一种显示基板和一种显示装置。
背景技术
在目前的TFT-LCD生产线生产过程中,由于设备腔室的空间较大,其中可能存在着较多的颗粒等异物,颗粒等异物容易随着反应气体一起沉积到基板上。
尤其在ADS(AdvancedSuperDimensionSwitch高级超维场)或HADS(高开口率ADS)的生产工艺中,如图1所示,在形成钝化层时,钝化层中位于数据线上的第一颗粒可能造成数据线与公共电极短路,形成信号传输不良;落在像素区域的第二颗粒可能导致像素电极和公共电极的短路,形成点不良。目前两种不良发生率一直很高,并且通过设备清洁等手段均无法有效解决。
实用新型内容
本实用新型所要解决的技术问题是,减少显示基板中电极和/或线路之间的短路情况。
为此目的,本实用新型提出了一种显示基板,包括:
基底;
数据线,设置在所述基底之上;
第一绝缘层,设置在所述数据线之上;
第二绝缘层,设置在所述第一绝缘层之上;
第一透明电极,设置在所述第二绝缘层之上。
优选地,显示基板还包括:
栅极和第二透明电极,设置在所述基底之上,所述第二透明电极与所述第一透明电极相对应;
第三绝缘层,设置在所述栅极和第二透明电极之上,
其中,所述数据线设置在所述第三绝缘层之上。
优选地,所述第一绝缘层、第二绝缘层和第三绝缘层由以下至少一种材料制成:硅氮化合物、硅氧化合物。
优选地,显示基板还包括:
有源层,设置在所述第三绝缘层之上;
源极和漏极,设置在所述有源层之上;
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中设置有连通所述第二透明电极和所述漏极的第一过孔,
在所述第一过孔中设置有第一连接层,用于将所述第二透明电极和所述漏极电连接。
优选地,在所述第一过孔中露出漏极的部分上表面,
第一连接层与所述漏极的侧面和露出的部分上表面,以及所述第二透明电极的侧面相接触。
优选地,显示基板还包括:
第一透明电极线,设置在所述基底之上,
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中与所述第一透明电极线对应的位置设置有第二过孔;
第二连接层,设置在所述第二过孔中,用于将所述第一透明电极线和所述第一透明电极电连接。
优选地,所述第一连接层、第二连接层和所述第一透明电极同层设置。
优选地,所述第一透明电极线、所述第二透明电极和所述栅极同层设置。
优选地,所述数据线、源极和漏极同层设置。
优选地,所述第一透明电极为公共电极,所述第二透明电极为像素电极。
本实用新型还提出了一种显示装置,包括上述显示基板。
根据上述技术方案,通过设置第一绝缘层和第二绝缘层,可以使得数据线和第一透明电极之间相隔两层绝缘层,在其中的一层绝缘层中存在导电颗粒的情况下,不会将数据线和第一透明电极导通。通过将第二透明电极设置在基底上,使得第一透明电极与第二透明电极之间至少相隔三层绝缘层,在其中的一层或两层绝缘层中存在导电颗粒的情况下,不会将第一透明电极与第二透明电极导通。从而减少了数据线与第一透明电极层、第一透明电极层与第二透明电极层之间的短路情况。
附图说明
通过参考附图会更加清楚的理解本实用新型的特征和优点,附图是示意性的而不应理解为对本实用新型进行任何限制,在附图中:
图1示出了现有技术中显示基板的结构示意图;
图2示出了根据本实用新型一个实施例的显示基板的结构示意图;
图3示出了根据本实用新型一个实施例的显示基板制作方法的示意流程图;
图4至图10根据本实用新型一个实施例的显示基板制作方法的具体示意流程图;
附图标号说明:
1-基底;2-数据线;3-第一绝缘层;4-第二绝缘层;5-第一透明电极;6-栅极;7-第二透明电极;8-第三绝缘层;9-有源层;10-源极;11-漏极;12-第一过孔;13-第一连接层;14-第一透明电极线;15-第二过孔;16-第二连接层;17-导电颗粒。
具体实施方式
为了能够更清楚地理解本实用新型的上述目的、特征和优点,下面结合附图和具体实施方式对本实用新型进行进一步的详细描述。需要说明的是,在不冲突的情况下,本申请的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本实用新型,但是,本实用新型还可以采用其他不同于在此描述的其他方式来实施,因此,本实用新型的保护范围并不受下面公开的具体实施例的限制。
如图1所示,根据本实用新型一个实施例的显示基板,包括:
基底1;
数据线2,设置在基底1之上;
第一绝缘层3,设置在数据线2之上;
第二绝缘层4,设置在第一绝缘层3之上;
第一透明电极5,设置在第二绝缘层4之上。
通过设置第一绝缘层3和第二绝缘层4,可以使得数据线2和第一透明电极5(例如公共电极)之间相隔两层绝缘层,在其中的一层绝缘层中存在导电颗粒17的情况下,不会将数据线2和第一透明电极5导通。即使其中两层绝缘层中都存在导电颗粒,那么两层绝缘层中导电颗粒相连的概率极小,所以将数据线2和第一透明电极5导通的概率极小。从而保证像数据线2和第一透明电极5不会因绝缘层中的导电颗粒导致电连通而短路。
优选地,显示基板还包括:
栅极6和第二透明电极7,设置在基底1之上,第二透明电极7与第一透明电极5相对应;
第三绝缘层8,设置在栅极6和第二透明电极7之上,
其中,数据线设置在第三绝缘层8之上。
本实施例通过将第二透明电极7设置在基底1上,使得第一透明电极5与第二透明电极7(例如像素电极)之间至少相隔三层绝缘层(第一绝缘层3、第二绝缘层4和第三绝缘层8),在其中的一层或两层绝缘层中存在导电颗粒的情况下,不会将第一透明电极5与第二透明电极7导通。即使其中三层绝缘层中都存在导电颗粒,那么三层绝缘层中导电颗粒相连的概率极小,所以将第一透明电极5与第二透明电极7导通的概率极小。从而保证第一透明电极5和第二透明电极7不会因绝缘层中的导电颗粒导致电连通而短路。
优选地,第一绝缘层、第二绝缘层和第三绝缘层由以下至少一种材料制成:硅氮化合物、硅氧化合物。硅氮化合物(例如氮化硅)和硅氧化合物(例如氧化硅)均为现有技术中常用的绝缘层材料,制作工艺较为成熟,易于设置。
优选地,显示基板还包括:
有源层9,设置在第三绝缘层8之上;
源极10和漏极11,设置在有源层9之上;
其中,在第一绝缘层3、第二绝缘层4和第三绝缘层8中设置有连通第二透明电极7和漏极10的第一过孔12,
在第一过孔12中设置有第一连接层13,用于将第二透明电极7和漏极10电连接。
通过第一过孔12和第一连接层13可以将漏极10和第二透明电极7电连接,从而保证薄膜晶体管在导通时,数据信号能够从数据线2传输至源极10,并从源极10传输至漏极11,进而传输至第二透明电极7。
优选地,在第一过孔12中露出漏极10的部分上表面,
第一连接层13与漏极10的侧面和露出的部分上表面,以及第二透明电极7的侧面相接触。
其中,第一过孔可以通过干法蚀刻形成,由于干法蚀刻对于半导体材料制成的第一绝缘层、第二绝缘层和第三绝缘层等蚀刻速度较快,对于金属材料制成的漏极蚀刻速度较慢,因此在形成第一过孔时,可以使得在第一绝缘层和第二绝缘层形成的过孔较大,而第三绝缘层由于漏极的遮挡,形成的过孔较小,从而在在形成的第一过孔中露出漏极的部分上表面。
由于漏极的侧面积较小,仅与漏极的侧面相接触难以保证第一连接层与漏极良好的电连接。本实施例可以保证第一连接层13与漏极10的上表面存在一定的接触面积,从而保证第二透明电极7和漏极10具有良好的电连接关系,保证数据信号能够良好地传输至第二透明电极7。
优选地,显示基板还包括:
第一透明电极线14,设置在基底1之上,
其中,在第一绝缘层3、第二绝缘层4和第三绝缘层8中与第一透明电极线14对应的位置设置有第二过孔15;
第二连接层16,设置在第二过孔15中,用于将第一透明电极线14和第一透明电极5电连接。
通过第二过孔15和第二连接层16可以保证第一透明电极线14中的信号能够传输至第一透明电极5。
优选地,第一连接层13、第二连接层16和第一透明电极5同层设置。便于简化制作工艺。
优选地,第一透明电极线14、第二透明电极7和栅极6同层设置。便于简化制作工艺。
优选地,数据线1、源极10和漏极11同层设置。便于简化制作工艺。
优选地,第一透明电极5为公共电极,第二透明电极7为像素电极。
本实用新型还提出了一种显示装置,包括上述显示基板。
需要说明的是,本实施例中的显示装置可以为:电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
如图3所示,本实用新型还提出了一种显示基板的制作方法,包括:
S1,在基底1上形成栅极6、第一透明电极5,如图4所示;
S2,在栅极11、第一透明电极5和第一透明电极线14之上形成第三绝缘层8,如图5所示;
S3,在第三绝缘层8之上形成有源层9,在有源层9之上形成源极10、漏极11和数据线2,如图6所示;
S4,在源极10、漏极11和数据线2之上形成第一绝缘层3,如图7所示;
S5,在第一绝缘层3之上形成第二绝缘层4,如图8所示;
S8,在第二绝缘层4之上形成第二透明电极7,如图10所示。
优选地,在步骤S8之前还包括:
S6,在第一绝缘层3、第二绝缘层4和第三绝缘层8中形成连通第二透明电极7和漏极10的第一过孔12,如图9所示;
S7,在第一过孔12中形成第一连接层13,以将第二透明电极7和漏极10电连接,如图10所示。
优选地,步骤S1还包括:
在基底上形成第一透明电极线;
步骤S6还包括:在第一绝缘层3、第二绝缘层4和第三绝缘层8中与第一透明电极线14对应的位置形成第二过孔15,如图9所示;
步骤S7还包括:在第二过孔12中形成第二连接层16,以将第一透明电极线14和第一透明电极5电连接,如图10所示。
其中,上述流程所采用的形成工艺例如可包括:沉积、溅射等成膜工艺和刻蚀等构图工艺。
以上结合附图详细说明了本实用新型的技术方案,考虑到现有技术中,在形成绝缘层时,其中的导电颗粒可能导致绝缘层两侧的导电结构短路。根据本实用新型的技术方案,通过设置第一绝缘层和第二绝缘层,可以使得数据线和第一透明电极之间相隔两层绝缘层,在其中的一层绝缘层中存在导电颗粒的情况下,不会将数据线和第一透明电极导通。通过将第二透明电极设置在基底上,使得第一透明电极与第二透明电极之间至少相隔三层绝缘层,在其中的一层或两层绝缘层中存在导电颗粒的情况下,不会将第一透明电极与第二透明电极导通。从而减少了数据线与第一透明电极层、第一透明电极层与第二透明电极层之间的短路情况。
需要指出的是,在附图中,为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解,当元件或层被称为在另一元件或层“上”时,它可以直接在其他元件上,或者可以存在中间的层。另外,可以理解,当元件或层被称为在另一元件或层“下”时,它可以直接在其他元件下,或者可以存在一个以上的中间的层或元件。另外,还可以理解,当层或元件被称为在两层或两个元件“之间”时,它可以为两层或两个元件之间惟一的层,或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
在本实用新型中,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。术语“多个”指两个或两个以上,除非另有明确的限定。
以上所述仅为本实用新型的优选实施例而已,并不用于限制本实用新型,对于本领域的技术人员来说,本实用新型可以有各种更改和变化。凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。

Claims (19)

1.一种显示基板,其特征在于,包括:
基底;
数据线,设置在所述基底之上;
第一绝缘层,设置在所述数据线之上;
第二绝缘层,设置在所述第一绝缘层之上;
第一透明电极,设置在所述第二绝缘层之上。
2.根据权利要求1所述的显示基板,其特征在于,还包括:
栅极和第二透明电极,设置在所述基底之上,所述第二透明电极与所述第一透明电极相对应;
第三绝缘层,设置在所述栅极和第二透明电极之上,
其中,所述数据线设置在所述第三绝缘层之上。
3.根据权利要求2所述的显示基板,其特征在于,所述第一绝缘层、第二绝缘层和第三绝缘层由以下至少一种材料制成:硅氮化合物、硅氧化合物。
4.根据权利要求2所述的显示基板,其特征在于,还包括:
有源层,设置在所述第三绝缘层之上;
源极和漏极,设置在所述有源层之上;
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中设置有连通所述第二透明电极和所述漏极的第一过孔,
在所述第一过孔中设置有第一连接层,用于将所述第二透明电极和所述漏极电连接。
5.根据权利要求4所述的显示基板,其特征在于,在所述第一过孔中露出漏极的部分上表面,
所述第一连接层与所述漏极的侧面和露出的部分上表面,以及所述第二透明电极的侧面相接触。
6.根据权利要求4所述的显示基板,其特征在于,还包括:
第一透明电极线,设置在所述基底之上,
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中与所述第一透明电极线对应的位置设置有第二过孔;
第二连接层,设置在所述第二过孔中,用于将所述第一透明电极线和所述第一透明电极电连接。
7.根据权利要求6所述的显示基板,其特征在于,所述第一连接层、第二连接层和所述第一透明电极同层设置。
8.根据权利要求6所述的显示基板,其特征在于,所述第一透明电极线、所述第二透明电极和所述栅极同层设置。
9.根据权利要求4所述的显示基板,其特征在于,所述数据线、源极和漏极同层设置。
10.根据权利要求2至9中任一项所述的显示基板,其特征在于,所述第一透明电极为公共电极,所述第二透明电极为像素电极。
11.一种显示装置,其特征在于,包括权利要求1至10中任一项所述的显示基板。
12.根据权利要求3所述的显示基板,其特征在于,还包括:
有源层,设置在所述第三绝缘层之上;
源极和漏极,设置在所述有源层之上;
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中设置有连通所述第二透明电极和所述漏极的第一过孔,
在所述第一过孔中设置有第一连接层,用于将所述第二透明电极和所述漏极电连接。
13.根据权利要求12所述的显示基板,其特征在于,在所述第一过孔中露出漏极的部分上表面,
所述第一连接层与所述漏极的侧面和露出的部分上表面,以及所述第二透明电极的侧面相接触。
14.根据权利要求12所述的显示基板,其特征在于,还包括:
第一透明电极线,设置在所述基底之上,
其中,在所述第一绝缘层、第二绝缘层和第三绝缘层中与所述第一透明电极线对应的位置设置有第二过孔;
第二连接层,设置在所述第二过孔中,用于将所述第一透明电极线和所述第一透明电极电连接。
15.根据权利要求14所述的显示基板,其特征在于,所述第一连接层、第二连接层和所述第一透明电极同层设置。
16.根据权利要求14所述的显示基板,其特征在于,所述第一透明电极线、所述第二透明电极和所述栅极同层设置。
17.根据权利要求12所述的显示基板,其特征在于,所述数据线、源极和漏极同层设置。
18.根据权利要求12至17中任一项所述的显示基板,其特征在于,所述第一透明电极为公共电极,所述第二透明电极为像素电极。
19.一种显示装置,其特征在于,包括权利要求12至18中任一项所述的显示基板。
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