CN101957529A - Ffs型tft-lcd阵列基板及其制造方法 - Google Patents
Ffs型tft-lcd阵列基板及其制造方法 Download PDFInfo
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- CN101957529A CN101957529A CN2009100893848A CN200910089384A CN101957529A CN 101957529 A CN101957529 A CN 101957529A CN 2009100893848 A CN2009100893848 A CN 2009100893848A CN 200910089384 A CN200910089384 A CN 200910089384A CN 101957529 A CN101957529 A CN 101957529A
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- 238000005530 etching Methods 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 33
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- 238000005516 engineering process Methods 0.000 claims description 52
- 238000011161 development Methods 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 11
- 239000010408 film Substances 0.000 abstract description 76
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- 230000015572 biosynthetic process Effects 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 2
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100893848A CN101957529B (zh) | 2009-07-16 | 2009-07-16 | Ffs型tft-lcd阵列基板及其制造方法 |
US12/836,028 US8497966B2 (en) | 2009-07-16 | 2010-07-14 | FFS type TFT-LCD array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100893848A CN101957529B (zh) | 2009-07-16 | 2009-07-16 | Ffs型tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101957529A true CN101957529A (zh) | 2011-01-26 |
CN101957529B CN101957529B (zh) | 2013-02-13 |
Family
ID=43465057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100893848A Active CN101957529B (zh) | 2009-07-16 | 2009-07-16 | Ffs型tft-lcd阵列基板及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8497966B2 (zh) |
CN (1) | CN101957529B (zh) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035568A (zh) * | 2012-12-21 | 2013-04-10 | 北京京东方光电科技有限公司 | 一种tft阵列基板及制作方法、显示装置 |
CN103197480A (zh) * | 2013-03-22 | 2013-07-10 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
CN103219389A (zh) * | 2013-03-21 | 2013-07-24 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN103295961A (zh) * | 2013-05-22 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板、其制造方法及显示装置 |
CN103293797A (zh) * | 2012-06-08 | 2013-09-11 | 上海中航光电子有限公司 | 一种薄膜晶体管液晶显示装置及其制作方法 |
CN103354218A (zh) * | 2013-06-28 | 2013-10-16 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
CN103681481A (zh) * | 2012-09-14 | 2014-03-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN103946742A (zh) * | 2011-11-18 | 2014-07-23 | 夏普株式会社 | 半导体装置、显示装置和半导体装置的制造方法 |
CN104090442A (zh) * | 2014-07-15 | 2014-10-08 | 京东方科技集团股份有限公司 | 阵列基板、液晶显示装置和阵列基板的制作方法 |
CN104091805A (zh) * | 2014-06-18 | 2014-10-08 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
CN105511177A (zh) * | 2016-02-02 | 2016-04-20 | 京东方科技集团股份有限公司 | 一种阵列基板和液晶显示装置 |
CN106298808A (zh) * | 2016-09-21 | 2017-01-04 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制造方法、显示装置 |
CN106932986A (zh) * | 2017-04-17 | 2017-07-07 | 深圳市华星光电技术有限公司 | 阵列基板结构及阵列基板的制备方法 |
CN107393873A (zh) * | 2017-07-03 | 2017-11-24 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板的制作方法 |
CN108074863A (zh) * | 2017-12-08 | 2018-05-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板及其制备方法 |
US10192909B2 (en) | 2017-04-17 | 2019-01-29 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate structure and manufacturing method of array substrate |
Families Citing this family (10)
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CN102033379B (zh) * | 2009-09-30 | 2012-08-15 | 群康科技(深圳)有限公司 | 液晶显示器与其制造方法 |
CN102446913A (zh) * | 2010-09-30 | 2012-05-09 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
KR101394938B1 (ko) * | 2011-05-03 | 2014-05-14 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101992884B1 (ko) * | 2011-12-21 | 2019-06-26 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
CN202404339U (zh) * | 2012-01-12 | 2012-08-29 | 京东方科技集团股份有限公司 | 阵列基板及包括该阵列基板的显示装置 |
CN103337501B (zh) * | 2013-06-24 | 2015-11-25 | 深圳市华星光电技术有限公司 | 阵列基板及其制作方法、平板显示装置 |
CN103489877B (zh) * | 2013-09-30 | 2015-12-09 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和显示装置 |
CN105093823B (zh) * | 2015-06-03 | 2019-09-20 | 京东方科技集团股份有限公司 | 一种狭缝电极的制造方法、狭缝电极及显示面板 |
CN106842729B (zh) * | 2017-04-10 | 2019-08-20 | 深圳市华星光电技术有限公司 | 石墨烯电极制备方法及液晶显示面板 |
CN108646487B (zh) * | 2018-05-15 | 2020-12-25 | Tcl华星光电技术有限公司 | Ffs型阵列基板的制作方法及ffs型阵列基板 |
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KR20020002054A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 모드 액정 표시 장치 및 그 제조방법 |
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JP4683688B2 (ja) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US7202928B2 (en) * | 2003-10-16 | 2007-04-10 | Lg. Philips Lcd Co., Ltd | Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same |
KR100566816B1 (ko) * | 2003-11-04 | 2006-04-03 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 |
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KR101294232B1 (ko) * | 2007-06-08 | 2013-08-07 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및이의 제조 방법 |
KR101048927B1 (ko) * | 2008-05-21 | 2011-07-12 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
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CN1949040A (zh) * | 2005-10-12 | 2007-04-18 | 瀚宇彩晶股份有限公司 | 边缘电场切换式液晶显示器与其制造方法 |
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Cited By (32)
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CN103946742B (zh) * | 2011-11-18 | 2016-08-31 | 夏普株式会社 | 半导体装置、显示装置和半导体装置的制造方法 |
CN103946742A (zh) * | 2011-11-18 | 2014-07-23 | 夏普株式会社 | 半导体装置、显示装置和半导体装置的制造方法 |
CN103293797B (zh) * | 2012-06-08 | 2016-06-29 | 上海中航光电子有限公司 | 一种薄膜晶体管液晶显示装置及其制作方法 |
CN103293797A (zh) * | 2012-06-08 | 2013-09-11 | 上海中航光电子有限公司 | 一种薄膜晶体管液晶显示装置及其制作方法 |
CN103681481A (zh) * | 2012-09-14 | 2014-03-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN103035568A (zh) * | 2012-12-21 | 2013-04-10 | 北京京东方光电科技有限公司 | 一种tft阵列基板及制作方法、显示装置 |
US9343488B2 (en) | 2012-12-21 | 2016-05-17 | Beijing Boe Optoelectronics Technology Co., Ltd. | TFT array substrate manufacturing method thereof and display device |
CN103219389A (zh) * | 2013-03-21 | 2013-07-24 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
US9240485B2 (en) | 2013-03-21 | 2016-01-19 | Boe Technology Group Co., Ltd. | Thin film transistor and method for manufacturing the same, array substrate and display device |
CN103197480B (zh) * | 2013-03-22 | 2015-07-01 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
CN103197480A (zh) * | 2013-03-22 | 2013-07-10 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
CN103295961A (zh) * | 2013-05-22 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板、其制造方法及显示装置 |
CN103295961B (zh) * | 2013-05-22 | 2016-01-13 | 京东方科技集团股份有限公司 | 阵列基板、其制造方法及显示装置 |
CN103354218A (zh) * | 2013-06-28 | 2013-10-16 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
CN103354218B (zh) * | 2013-06-28 | 2016-12-28 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示装置 |
US9324735B2 (en) | 2013-06-28 | 2016-04-26 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof, display panel and display device |
US9966389B2 (en) | 2014-06-18 | 2018-05-08 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof and display device |
WO2015192526A1 (zh) * | 2014-06-18 | 2015-12-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
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