CN101685229B - 液晶显示器阵列基板的制造方法 - Google Patents
液晶显示器阵列基板的制造方法 Download PDFInfo
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- CN101685229B CN101685229B CN2008102227921A CN200810222792A CN101685229B CN 101685229 B CN101685229 B CN 101685229B CN 2008102227921 A CN2008102227921 A CN 2008102227921A CN 200810222792 A CN200810222792 A CN 200810222792A CN 101685229 B CN101685229 B CN 101685229B
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000001039 wet etching Methods 0.000 claims description 33
- 238000001259 photo etching Methods 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 31
- 238000004380 ashing Methods 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008102227921A CN101685229B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示器阵列基板的制造方法 |
US12/565,953 US8017465B2 (en) | 2008-09-25 | 2009-09-24 | Method for manufacturing array substrate of liquid crystal display |
KR1020090091041A KR101089259B1 (ko) | 2008-09-25 | 2009-09-25 | 액정 표시 장치의 어레이 기판의 제조방법 |
JP2009221180A JP5593047B2 (ja) | 2008-09-25 | 2009-09-25 | 液晶表示装置のアレイ基板の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008102227921A CN101685229B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示器阵列基板的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101685229A CN101685229A (zh) | 2010-03-31 |
CN101685229B true CN101685229B (zh) | 2012-02-29 |
Family
ID=42038078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102227921A Expired - Fee Related CN101685229B (zh) | 2008-09-25 | 2008-09-25 | 液晶显示器阵列基板的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8017465B2 (zh) |
JP (1) | JP5593047B2 (zh) |
KR (1) | KR101089259B1 (zh) |
CN (1) | CN101685229B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237397B (zh) * | 2010-04-22 | 2013-04-17 | 北京京东方光电科技有限公司 | 电极结构及制备方法、阵列基板及制备方法 |
CN102148259B (zh) * | 2010-10-12 | 2014-04-16 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法和液晶显示器 |
CN102456619B (zh) * | 2010-10-22 | 2014-01-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
CN102456620B (zh) * | 2010-10-22 | 2015-04-15 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
CN102637648B (zh) * | 2011-07-15 | 2014-03-05 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示器、阵列基板及其制造方法 |
CN102769040B (zh) * | 2012-07-25 | 2015-03-04 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN102799038B (zh) * | 2012-07-25 | 2015-04-01 | 北京京东方光电科技有限公司 | 一种阵列基板、显示装置及阵列基板的制造方法 |
CN102881598B (zh) | 2012-09-17 | 2015-08-12 | 京东方科技集团股份有限公司 | 薄膜晶体管的制造方法、阵列基板的制造方法及显示装置 |
CN103943636A (zh) * | 2014-04-04 | 2014-07-23 | 深圳莱宝高科技股份有限公司 | 一种薄膜晶体管阵列基板及其制作方法 |
KR20160024081A (ko) | 2014-08-22 | 2016-03-04 | 삼성디스플레이 주식회사 | 금속 패턴의 형성 방법 및 표시 기판의 제조 방법 |
CN104617112B (zh) * | 2015-02-09 | 2017-10-17 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104637806A (zh) * | 2015-03-02 | 2015-05-20 | 京东方科技集团股份有限公司 | 一种刻蚀方法 |
KR102232755B1 (ko) * | 2015-04-07 | 2021-03-26 | 삼성전자주식회사 | 2차원 물질을 이용한 전자소자 및 그 제조 방법 |
CN105097551A (zh) | 2015-08-13 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制作方法和阵列基板的制作方法 |
CN113219749B (zh) * | 2016-02-17 | 2023-01-10 | 群创光电股份有限公司 | 主动元件阵列基板以及显示面板 |
CN106783737B (zh) * | 2017-04-07 | 2020-02-21 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板、显示装置 |
CN108701695A (zh) * | 2017-05-17 | 2018-10-23 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法 |
CN108417583B (zh) * | 2018-03-09 | 2021-10-29 | 惠科股份有限公司 | 一种阵列基板的制造方法和阵列基板 |
CN108470718A (zh) * | 2018-03-23 | 2018-08-31 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板、显示装置 |
CN113241323B (zh) * | 2021-03-09 | 2024-05-03 | 滁州惠科光电科技有限公司 | 一种阵列基板的制造方法和显示面板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004163933A (ja) * | 2002-11-11 | 2004-06-10 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法 |
CN1670909A (zh) * | 2004-03-19 | 2005-09-21 | 三星电子株式会社 | 薄膜晶体管阵列面板及其制造方法 |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100333273B1 (ko) * | 1999-08-02 | 2002-04-24 | 구본준, 론 위라하디락사 | 박막트랜지스터형 액정표시장치의 어레이기판과 그 제조방법 |
JP4920140B2 (ja) * | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置及びその製造方法 |
KR100499371B1 (ko) * | 2002-04-17 | 2005-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100476366B1 (ko) * | 2002-04-17 | 2005-03-16 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
JP4651929B2 (ja) * | 2002-11-15 | 2011-03-16 | Nec液晶テクノロジー株式会社 | 液晶表示装置の製造方法 |
KR100619624B1 (ko) | 2003-10-11 | 2006-09-08 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR101107270B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법과, 그를 이용한액정 패널 및 그 제조 방법 |
KR101125254B1 (ko) * | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법과, 그를 이용한 액정 패널 및 그 제조 방법 |
KR20070075808A (ko) * | 2006-01-16 | 2007-07-24 | 삼성전자주식회사 | 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판 |
JP2007189120A (ja) * | 2006-01-16 | 2007-07-26 | Idemitsu Kosan Co Ltd | Tft基板及びその製造方法 |
US7952099B2 (en) * | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
JP5063936B2 (ja) * | 2006-06-08 | 2012-10-31 | 三菱電機株式会社 | Tftアレイ基板の製造方法 |
CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
JP5090745B2 (ja) * | 2007-01-17 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | 表示装置および表示装置の製造方法 |
-
2008
- 2008-09-25 CN CN2008102227921A patent/CN101685229B/zh not_active Expired - Fee Related
-
2009
- 2009-09-24 US US12/565,953 patent/US8017465B2/en not_active Expired - Fee Related
- 2009-09-25 JP JP2009221180A patent/JP5593047B2/ja active Active
- 2009-09-25 KR KR1020090091041A patent/KR101089259B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004163933A (ja) * | 2002-11-11 | 2004-06-10 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法 |
CN1670909A (zh) * | 2004-03-19 | 2005-09-21 | 三星电子株式会社 | 薄膜晶体管阵列面板及其制造方法 |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101089259B1 (ko) | 2011-12-02 |
JP5593047B2 (ja) | 2014-09-17 |
US20100075450A1 (en) | 2010-03-25 |
CN101685229A (zh) | 2010-03-31 |
KR20100035131A (ko) | 2010-04-02 |
US8017465B2 (en) | 2011-09-13 |
JP2010079302A (ja) | 2010-04-08 |
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Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150624 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150624 |
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Effective date of registration: 20150624 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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