JP2009267366A5 - - Google Patents

Download PDF

Info

Publication number
JP2009267366A5
JP2009267366A5 JP2009030450A JP2009030450A JP2009267366A5 JP 2009267366 A5 JP2009267366 A5 JP 2009267366A5 JP 2009030450 A JP2009030450 A JP 2009030450A JP 2009030450 A JP2009030450 A JP 2009030450A JP 2009267366 A5 JP2009267366 A5 JP 2009267366A5
Authority
JP
Japan
Prior art keywords
film
silicon
oxide film
interface
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009030450A
Other languages
English (en)
Other versions
JP2009267366A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009030450A priority Critical patent/JP2009267366A/ja
Priority claimed from JP2009030450A external-priority patent/JP2009267366A/ja
Priority to US12/417,186 priority patent/US8063435B2/en
Publication of JP2009267366A publication Critical patent/JP2009267366A/ja
Publication of JP2009267366A5 publication Critical patent/JP2009267366A5/ja
Pending legal-status Critical Current

Links

Claims (1)

  1. シリコン基板とゲート電極の間に、前記シリコン基板側から順に第１シリコン酸化膜、シリコン窒化膜、第２シリコン酸化膜が積層した絶縁膜が介在した半導体記憶装置であって、
    前記第１シリコン酸化膜と前記シリコン窒化膜の間の界面、前記シリコン窒化膜と前記第２シリコン酸化膜の間の界面、及び前記第２シリコン酸化膜と前記ゲート電極の間の界面の全て又は少なくとも１つの界面に水素吸蔵膜が介在することを特徴とする半導体記憶装置。
JP2009030450A 2008-04-02 2009-02-12 半導体記憶装置及びその製造方法 Pending JP2009267366A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009030450A JP2009267366A (ja) 2008-04-02 2009-02-12 半導体記憶装置及びその製造方法
US12/417,186 US8063435B2 (en) 2008-04-02 2009-04-02 Semiconductor memory and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008096373 2008-04-02
JP2009030450A JP2009267366A (ja) 2008-04-02 2009-02-12 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009267366A JP2009267366A (ja) 2009-11-12
JP2009267366A5 true JP2009267366A5 (ja) 2012-03-15

Family

ID=40930808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009030450A Pending JP2009267366A (ja) 2008-04-02 2009-02-12 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (1) US8063435B2 (ja)
JP (1) JP2009267366A (ja)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
WO2009089066A2 (en) 2008-01-10 2009-07-16 Stc.Unm Compounds for use in diagnosing and treating melanoma, including metastatic melanoma and methods related to same
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
KR101512494B1 (ko) 2009-01-09 2015-04-16 삼성전자주식회사 반도체 장치의 제조 방법
US8511281B2 (en) * 2009-07-10 2013-08-20 Tula Technology, Inc. Skip fire engine control
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
KR20120111738A (ko) 2009-12-30 2012-10-10 어플라이드 머티어리얼스, 인코포레이티드 융통성을 가진 질소／수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
US8647992B2 (en) 2010-01-06 2014-02-11 Applied Materials, Inc. Flowable dielectric using oxide liner
JP2013516788A (ja) 2010-01-07 2013-05-13 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄ用のインサイチュオゾン硬化
SG183873A1 (en) * 2010-03-05 2012-10-30 Applied Materials Inc Conformal layers by radical-component cvd
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
KR101261928B1 (ko) * 2011-11-07 2013-05-08 현대자동차주식회사 실리콘 카바이드 쇼트키 베리어 다이오드의 제조방법
KR101942504B1 (ko) * 2012-08-31 2019-01-28 에스케이하이닉스 주식회사 매립 게이트형 반도체 소자, 그 반도체 소자를 갖는 모듈 및 시스템 그리고 그 반도체 소자 제조 방법
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6292507B2 (ja) * 2014-02-28 2018-03-14 国立研究開発法人物質・材料研究機構 水素拡散障壁を備える半導体デバイス及びその製作方法
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR102263315B1 (ko) 2014-08-06 2021-06-15 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조방법
CN110391289B (zh) * 2019-06-20 2020-06-19 长江存储科技有限责任公司 一种半导体结构及其制作方法
KR20210117389A (ko) * 2020-03-18 2021-09-29 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115904A (ja) 1995-10-14 1997-05-02 Semiconductor Energy Lab Co Ltd 酸化膜の作製方法及び酸化膜の作製装置
US20030017670A1 (en) * 2001-07-20 2003-01-23 Macronix International Co., Ltd. Method of manufacturing a semiconductor memory device with a gate dielectric stack
JP3724648B2 (ja) * 2003-10-01 2005-12-07 セイコーエプソン株式会社 半導体装置の製造方法
US7183166B2 (en) * 2003-11-25 2007-02-27 Macronix International Co., Ltd. Method for forming oxide on ONO structure
JP2005260177A (ja) * 2004-03-15 2005-09-22 Toshiba Corp 半導体装置の製造方法
JP4781806B2 (ja) * 2005-12-20 2011-09-28 シャープ株式会社 半導体記憶装置およびその製造方法
JP2007311695A (ja) * 2006-05-22 2007-11-29 Renesas Technology Corp 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2009267366A5 (ja)
JP2015181159A5 (ja)
JP2011086927A5 (ja) 半導体装置
JP2013179122A5 (ja)
JP2012147013A5 (ja) 表示装置
JP2010087494A5 (ja) 半導体装置
JP2012049513A5 (ja) 半導体装置
JP2010056546A5 (ja) 半導体装置
JP2011054949A5 (ja) 半導体装置
JP2011216878A5 (ja) 半導体装置
JP2013038399A5 (ja) 半導体装置
JP2010135777A5 (ja) 半導体装置
JP2010282987A5 (ja) 半導体装置
JP2010153828A5 (ja) 半導体装置
JP2011151379A5 (ja) トランジスタ
JP2010258431A5 (ja) 半導体装置
JP2012015500A5 (ja)
JP2010212673A5 (ja) 半導体装置
JP2010226097A5 (ja) 半導体装置
JP2010192881A5 (ja) 半導体装置
JP2011135061A5 (ja) 半導体装置
JP2010135780A5 (ja) 半導体装置
JP2014007399A5 (ja)
JP2013149970A5 (ja)
JP2009231824A5 (ja) 半導体装置