JP2009033141A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009033141A5 JP2009033141A5 JP2008167699A JP2008167699A JP2009033141A5 JP 2009033141 A5 JP2009033141 A5 JP 2009033141A5 JP 2008167699 A JP2008167699 A JP 2008167699A JP 2008167699 A JP2008167699 A JP 2008167699A JP 2009033141 A5 JP2009033141 A5 JP 2009033141A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- thin film
- insulating film
- gate electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims 32
- 239000010409 thin film Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008167699A JP2009033141A (ja) | 2007-06-29 | 2008-06-26 | 半導体装置及びその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007173103 | 2007-06-29 | ||
| JP2008167699A JP2009033141A (ja) | 2007-06-29 | 2008-06-26 | 半導体装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013191254A Division JP5606602B2 (ja) | 2007-06-29 | 2013-09-16 | 半導体装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009033141A JP2009033141A (ja) | 2009-02-12 |
| JP2009033141A5 true JP2009033141A5 (enExample) | 2011-05-26 |
Family
ID=40159337
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008167699A Withdrawn JP2009033141A (ja) | 2007-06-29 | 2008-06-26 | 半導体装置及びその作製方法 |
| JP2013191254A Expired - Fee Related JP5606602B2 (ja) | 2007-06-29 | 2013-09-16 | 半導体装置及び電子機器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013191254A Expired - Fee Related JP5606602B2 (ja) | 2007-06-29 | 2013-09-16 | 半導体装置及び電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US7851279B2 (enExample) |
| JP (2) | JP2009033141A (enExample) |
| KR (2) | KR101404439B1 (enExample) |
| CN (1) | CN101689532B (enExample) |
| WO (1) | WO2009004919A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101534009B1 (ko) * | 2008-10-21 | 2015-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치 |
| TW201023341A (en) * | 2008-12-12 | 2010-06-16 | Ind Tech Res Inst | Integrated circuit structure |
| KR101782176B1 (ko) * | 2009-07-18 | 2017-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| WO2011010542A1 (en) | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101772639B1 (ko) * | 2009-10-16 | 2017-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20190066086A (ko) | 2009-11-06 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101738996B1 (ko) * | 2009-11-13 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 메모리 소자를 포함하는 장치 |
| US8907392B2 (en) | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
| JP2014045175A (ja) | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR20150033155A (ko) * | 2013-09-23 | 2015-04-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| KR102220450B1 (ko) | 2013-12-02 | 2021-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10297653B2 (en) | 2014-07-23 | 2019-05-21 | Sony Corporation | Display device, method of manufacturing display device, and electronic apparatus |
| US10553690B2 (en) | 2015-08-04 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9847406B2 (en) | 2015-08-27 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, storage device, resistor circuit, display device, and electronic device |
| JP6811084B2 (ja) * | 2015-12-18 | 2021-01-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102763624B1 (ko) * | 2018-02-12 | 2025-02-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US11756934B2 (en) * | 2021-04-16 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5060034A (en) | 1988-11-01 | 1991-10-22 | Casio Computer Co., Ltd. | Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1 |
| JP3070099B2 (ja) * | 1990-12-13 | 2000-07-24 | ソニー株式会社 | スタティックｒａｍ |
| JP3082288B2 (ja) * | 1991-05-09 | 2000-08-28 | カシオ計算機株式会社 | 薄膜メモリトランジスタ及びその製造方法 |
| JPH05145073A (ja) * | 1991-11-22 | 1993-06-11 | Seiko Epson Corp | 相補型薄膜トランジスタ |
| JPH0730001A (ja) * | 1993-07-09 | 1995-01-31 | Mitsubishi Electric Corp | 半導体装置 |
| JP2643833B2 (ja) | 1994-05-30 | 1997-08-20 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
| JP3253808B2 (ja) | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US5877054A (en) | 1995-06-29 | 1999-03-02 | Sharp Kabushiki Kaisha | Method of making nonvolatile semiconductor memory |
| US5978270A (en) | 1995-08-31 | 1999-11-02 | Hitachi, Ltd. | Semiconductor non-volatile memory device and computer system using the same |
| KR100205388B1 (ko) | 1995-09-12 | 1999-07-01 | 구자홍 | 액정표시장치 및 그 제조방법 |
| JPH09186335A (ja) * | 1995-12-27 | 1997-07-15 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| TW347567B (en) | 1996-03-22 | 1998-12-11 | Philips Eloctronics N V | Semiconductor device and method of manufacturing a semiconductor device |
| JP4401448B2 (ja) | 1997-02-24 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6060743A (en) | 1997-05-21 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same |
| US6307214B1 (en) | 1997-06-06 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| JP4318768B2 (ja) | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3943200B2 (ja) * | 1997-08-01 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3943245B2 (ja) * | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3265569B2 (ja) * | 1998-04-15 | 2002-03-11 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2000200842A (ja) | 1998-11-04 | 2000-07-18 | Sony Corp | 不揮発性半導体記憶装置、製造方法および書き込み方法 |
| US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
| JP4202502B2 (ja) | 1998-12-28 | 2008-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW518637B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
| JP4531194B2 (ja) | 1999-04-15 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 電気光学装置及び電子機器 |
| WO2001024265A1 (fr) | 1999-09-30 | 2001-04-05 | Rohm, Co., Ltd. | Memoire non volatile |
| JP2001148434A (ja) | 1999-10-12 | 2001-05-29 | New Heiro:Kk | 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ |
| WO2001047012A1 (en) | 1999-12-21 | 2001-06-28 | Koninklijke Philips Electronics N.V. | Non-volatile memory cells and periphery |
| JP4666783B2 (ja) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20020113268A1 (en) * | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
| US6423644B1 (en) | 2000-07-12 | 2002-07-23 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
| US6440870B1 (en) | 2000-07-12 | 2002-08-27 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
| JP2002113286A (ja) | 2000-10-06 | 2002-04-16 | Matsushita Electric Works Ltd | 洗濯機用防水パン |
| JP4815695B2 (ja) * | 2001-05-24 | 2011-11-16 | ソニー株式会社 | 不揮発性半導体メモリ装置の動作方法 |
| US6759282B2 (en) | 2001-06-12 | 2004-07-06 | International Business Machines Corporation | Method and structure for buried circuits and devices |
| KR100487523B1 (ko) | 2002-04-15 | 2005-05-03 | 삼성전자주식회사 | 부유트랩형 비휘발성 메모리 소자 및 그 제조방법 |
| US6853035B1 (en) | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
| US6730957B1 (en) | 2002-11-05 | 2004-05-04 | Winbond Electronics Corporation | Non-volatile memory compatible with logic devices and fabrication method thereof |
| JP2005005516A (ja) * | 2003-06-12 | 2005-01-06 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| EP1714294B1 (en) | 2004-02-10 | 2016-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory |
| US7652321B2 (en) | 2004-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP4942950B2 (ja) * | 2004-05-28 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7504663B2 (en) | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
| US7606066B2 (en) * | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
-
2008
- 2008-06-11 KR KR1020137014926A patent/KR101404439B1/ko not_active Expired - Fee Related
- 2008-06-11 KR KR1020107001976A patent/KR101420603B1/ko not_active Expired - Fee Related
- 2008-06-11 CN CN2008800228260A patent/CN101689532B/zh not_active Expired - Fee Related
- 2008-06-11 WO PCT/JP2008/061077 patent/WO2009004919A1/en not_active Ceased
- 2008-06-24 US US12/213,727 patent/US7851279B2/en not_active Expired - Fee Related
- 2008-06-26 JP JP2008167699A patent/JP2009033141A/ja not_active Withdrawn
-
2010
- 2010-12-09 US US12/963,847 patent/US8022469B2/en not_active Expired - Fee Related
-
2011
- 2011-08-11 US US13/207,450 patent/US8581332B2/en not_active Expired - Fee Related
-
2013
- 2013-09-16 JP JP2013191254A patent/JP5606602B2/ja not_active Expired - Fee Related
- 2013-10-01 US US14/043,062 patent/US9184173B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009033141A5 (enExample) | ||
| JP2021082832A5 (enExample) | ||
| JP2008078317A5 (enExample) | ||
| JP2006041354A5 (enExample) | ||
| CN108091693B (zh) | 铁电场效应晶体管及其制备方法 | |
| JP2009158941A5 (enExample) | ||
| CN104867824A (zh) | 具有变化栅极结构的集成电路及其制法 | |
| US20170330794A1 (en) | Via blocking layer | |
| CN103794565A (zh) | 逻辑晶体管和非易失性存储器的制造方法 | |
| CN104934434A (zh) | 半导体器件及其制造方法 | |
| US10811424B2 (en) | Integrated computing structures formed on silicon | |
| TWI463667B (zh) | 半導體器件和可程式的非易失性儲存設備 | |
| CN101621008A (zh) | Tft浮置栅极存储单元结构 | |
| JP2009239276A5 (enExample) | ||
| US9337045B2 (en) | Methods of forming a semiconductor circuit element and semiconductor circuit element | |
| TWI720263B (zh) | 電晶體結構以及其製造方法 | |
| TWI728253B (zh) | 製造半導體裝置的方法 | |
| JP2008010842A5 (enExample) | ||
| CN106169474B (zh) | 用于制造包括mos电容器的一次性可编程类型的存储器单元的方法以及对应的集成电路 | |
| JP2020013850A5 (enExample) | ||
| JP2006054425A5 (enExample) | ||
| TWI675408B (zh) | 半導體元件及為其多個組件提供閘極結構的方法 | |
| JP2006344943A5 (enExample) | ||
| JP2005294814A5 (enExample) | ||
| CN101621005B (zh) | Tft monos或sonos存储单元结构 |