JP2009239276A5 - - Google Patents
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- Publication number
- JP2009239276A5 JP2009239276A5 JP2009050930A JP2009050930A JP2009239276A5 JP 2009239276 A5 JP2009239276 A5 JP 2009239276A5 JP 2009050930 A JP2009050930 A JP 2009050930A JP 2009050930 A JP2009050930 A JP 2009050930A JP 2009239276 A5 JP2009239276 A5 JP 2009239276A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- resist mask
- etching
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 159
- 239000004065 semiconductor Substances 0.000 claims 48
- 238000005530 etching Methods 0.000 claims 40
- 239000012535 impurity Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 15
- 239000010409 thin film Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 12
- 230000003796 beauty Effects 0.000 claims 8
- 230000015572 biosynthetic process Effects 0.000 claims 8
- 238000001312 dry etching Methods 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009050930A JP5383256B2 (ja) | 2008-03-07 | 2009-03-04 | 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008057208 | 2008-03-07 | ||
| JP2008057208 | 2008-03-07 | ||
| JP2009050930A JP5383256B2 (ja) | 2008-03-07 | 2009-03-04 | 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009239276A JP2009239276A (ja) | 2009-10-15 |
| JP2009239276A5 true JP2009239276A5 (enExample) | 2012-03-01 |
| JP5383256B2 JP5383256B2 (ja) | 2014-01-08 |
Family
ID=41054048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009050930A Expired - Fee Related JP5383256B2 (ja) | 2008-03-07 | 2009-03-04 | 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7749820B2 (enExample) |
| JP (1) | JP5383256B2 (enExample) |
| KR (1) | KR101404425B1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
| US7989275B2 (en) * | 2008-03-10 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof |
| US8207026B2 (en) * | 2009-01-28 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
| US7989234B2 (en) * | 2009-02-16 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
| US8202769B2 (en) | 2009-03-11 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5539765B2 (ja) * | 2009-03-26 | 2014-07-02 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| TWI650848B (zh) | 2009-08-07 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5642447B2 (ja) | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101998737B1 (ko) | 2009-12-18 | 2019-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| WO2011160937A1 (en) * | 2010-06-21 | 2011-12-29 | Imec | Method of manufacturing thin film transistors and transistor circuits |
| US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| TWI556317B (zh) | 2010-10-07 | 2016-11-01 | 半導體能源研究所股份有限公司 | 薄膜元件、半導體裝置以及它們的製造方法 |
| US8679986B2 (en) | 2010-10-14 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5977523B2 (ja) | 2011-01-12 | 2016-08-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US9318506B2 (en) | 2011-07-08 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN105161498B (zh) * | 2015-08-03 | 2017-09-19 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板以及显示装置 |
| CN105633076A (zh) * | 2016-01-04 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法和显示装置 |
| CN110137083B (zh) * | 2019-04-17 | 2020-12-08 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法 |
| US11886070B2 (en) * | 2019-12-06 | 2024-01-30 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and method of manufacturing the display panel |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122123A (en) * | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
| JPS609445A (ja) | 1983-06-30 | 1985-01-18 | Marufuku Shokuhin:Kk | 冷凍かきの製造方法 |
| JPS6273669A (ja) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置の製造方法 |
| JPS6484669A (en) | 1987-09-26 | 1989-03-29 | Casio Computer Co Ltd | Thin film transistor |
| JPH0311744A (ja) | 1989-06-09 | 1991-01-21 | Citizen Watch Co Ltd | 薄膜トランジスタの製造方法 |
| JPH0315827A (ja) * | 1989-06-14 | 1991-01-24 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、薄膜トランジスタアレー及び液晶表示装置 |
| JPH03161938A (ja) | 1989-11-20 | 1991-07-11 | Seiko Instr Inc | 薄膜トランジスタの製造方法 |
| EP0775931B1 (en) * | 1995-11-21 | 2005-10-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a liquid crystal display |
| KR100237673B1 (ko) * | 1996-05-30 | 2000-01-15 | 윤종용 | 액정 표시 장치 및 제조 방법 |
| JPH11352515A (ja) * | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
| US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
| KR100325079B1 (ko) * | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
| KR100494683B1 (ko) * | 2000-05-31 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크 |
| US7223643B2 (en) * | 2000-08-11 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法 |
| KR100496420B1 (ko) * | 2001-03-02 | 2005-06-17 | 삼성에스디아이 주식회사 | 2층구조의 소오스/드레인 전극을 갖는 박막 트랜지스터 및그의 제조방법과 이를 이용한 액티브 매트릭스형 표시소자및 그의 제조방법 |
| JP3488441B2 (ja) * | 2001-03-29 | 2004-01-19 | 株式会社半導体エネルギー研究所 | アクティブ型液晶表示装置の作製方法 |
| JP2002350899A (ja) * | 2001-05-24 | 2002-12-04 | Matsushita Electric Ind Co Ltd | 液晶ディスプレイ装置の製造方法 |
| TW488080B (en) * | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
| JP2003179069A (ja) | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
| JP4004835B2 (ja) * | 2002-04-02 | 2007-11-07 | 株式会社アドバンスト・ディスプレイ | 薄膜トランジスタアレイ基板の製造方法 |
| JP4100278B2 (ja) * | 2003-07-15 | 2008-06-11 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
| TWI239651B (en) * | 2004-04-30 | 2005-09-11 | Quanta Display Inc | Manufacturing method of a thin film transistor-liquid crystal display |
| EP1624333B1 (en) * | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
| KR101201017B1 (ko) * | 2005-06-27 | 2012-11-13 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| KR101225440B1 (ko) * | 2005-06-30 | 2013-01-25 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| US8149346B2 (en) * | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| CN102360142B (zh) * | 2005-12-05 | 2016-03-30 | 株式会社半导体能源研究所 | 液晶显示器 |
| EP1793266B1 (en) * | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
| TWI322288B (en) * | 2006-03-07 | 2010-03-21 | Au Optronics Corp | Manufacture method of pixel array substrate |
| WO2008099528A1 (ja) | 2007-02-13 | 2008-08-21 | Sharp Kabushiki Kaisha | 表示装置、表示装置の製造方法 |
| WO2009072451A1 (en) * | 2007-12-03 | 2009-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
| US8035107B2 (en) * | 2008-02-26 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| WO2009107686A1 (en) * | 2008-02-27 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof, and electronic device |
| US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
-
2009
- 2009-02-26 US US12/393,121 patent/US7749820B2/en not_active Expired - Fee Related
- 2009-03-04 JP JP2009050930A patent/JP5383256B2/ja not_active Expired - Fee Related
- 2009-03-06 KR KR1020090019195A patent/KR101404425B1/ko not_active Expired - Fee Related
-
2010
- 2010-05-27 US US12/788,367 patent/US8278662B2/en not_active Expired - Fee Related