CN101689532B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

Info

Publication number
CN101689532B
CN101689532B CN2008800228260A CN200880022826A CN101689532B CN 101689532 B CN101689532 B CN 101689532B CN 2008800228260 A CN2008800228260 A CN 2008800228260A CN 200880022826 A CN200880022826 A CN 200880022826A CN 101689532 B CN101689532 B CN 101689532B
Authority
CN
China
Prior art keywords
film
conducting
dielectric film
semiconductor
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800228260A
Other languages
English (en)
Chinese (zh)
Other versions
CN101689532A (zh
Inventor
高野圭惠
掛端哲弥
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101689532A publication Critical patent/CN101689532A/zh
Application granted granted Critical
Publication of CN101689532B publication Critical patent/CN101689532B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2008800228260A 2007-06-29 2008-06-11 半导体器件及其制造方法 Expired - Fee Related CN101689532B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP173103/2007 2007-06-29
JP2007173103 2007-06-29
PCT/JP2008/061077 WO2009004919A1 (en) 2007-06-29 2008-06-11 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN101689532A CN101689532A (zh) 2010-03-31
CN101689532B true CN101689532B (zh) 2013-06-12

Family

ID=40159337

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800228260A Expired - Fee Related CN101689532B (zh) 2007-06-29 2008-06-11 半导体器件及其制造方法

Country Status (5)

Country Link
US (4) US7851279B2 (enExample)
JP (2) JP2009033141A (enExample)
KR (2) KR101404439B1 (enExample)
CN (1) CN101689532B (enExample)
WO (1) WO2009004919A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101534009B1 (ko) * 2008-10-21 2015-07-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102286284B1 (ko) 2009-11-06 2021-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
KR20150033155A (ko) * 2013-09-23 2015-04-01 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102264987B1 (ko) 2013-12-02 2021-06-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016013264A1 (ja) * 2014-07-23 2016-01-28 ソニー株式会社 表示装置、表示装置の製造方法、及び、電子機器
US10553690B2 (en) * 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9847406B2 (en) 2015-08-27 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, resistor circuit, display device, and electronic device
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
KR102763624B1 (ko) * 2018-02-12 2025-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치
US11756934B2 (en) * 2021-04-16 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535478A (zh) * 2001-06-12 2004-10-06 �Ҵ���˾ 埋入式电路及器件的方法与结构

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
JP3070099B2 (ja) * 1990-12-13 2000-07-24 ソニー株式会社 スタティックｒａｍ
JP3082288B2 (ja) * 1991-05-09 2000-08-28 カシオ計算機株式会社 薄膜メモリトランジスタ及びその製造方法
JPH05145073A (ja) * 1991-11-22 1993-06-11 Seiko Epson Corp 相補型薄膜トランジスタ
JPH0730001A (ja) * 1993-07-09 1995-01-31 Mitsubishi Electric Corp 半導体装置
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JP3253808B2 (ja) 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5877054A (en) 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
US5978270A (en) 1995-08-31 1999-11-02 Hitachi, Ltd. Semiconductor non-volatile memory device and computer system using the same
KR100205388B1 (ko) 1995-09-12 1999-07-01 구자홍 액정표시장치 및 그 제조방법
JPH09186335A (ja) * 1995-12-27 1997-07-15 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
TW347567B (en) 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6060743A (en) 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4318768B2 (ja) 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3943200B2 (ja) * 1997-08-01 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3943245B2 (ja) 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP3265569B2 (ja) * 1998-04-15 2002-03-11 日本電気株式会社 半導体装置及びその製造方法
JP2000200842A (ja) 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
JP4202502B2 (ja) * 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4531194B2 (ja) 1999-04-15 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置及び電子機器
TW518637B (en) * 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
EP1220318A4 (en) 1999-09-30 2007-06-06 Rohm Co Ltd Nonvolatile memory
JP2001148434A (ja) 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
WO2001047012A1 (en) 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
JP4666783B2 (ja) * 2000-02-01 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6423644B1 (en) 2000-07-12 2002-07-23 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2002113286A (ja) 2000-10-06 2002-04-16 Matsushita Electric Works Ltd 洗濯機用防水パン
JP4815695B2 (ja) * 2001-05-24 2011-11-16 ソニー株式会社 不揮発性半導体メモリ装置の動作方法
KR100487523B1 (ko) 2002-04-15 2005-05-03 삼성전자주식회사 부유트랩형 비휘발성 메모리 소자 및 그 제조방법
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6730957B1 (en) 2002-11-05 2004-05-04 Winbond Electronics Corporation Non-volatile memory compatible with logic devices and fabrication method thereof
JP2005005516A (ja) * 2003-06-12 2005-01-06 Renesas Technology Corp 半導体装置およびその製造方法
JP4860160B2 (ja) * 2004-02-10 2012-01-25 株式会社半導体エネルギー研究所 半導体装置
US7652321B2 (en) 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP4942950B2 (ja) * 2004-05-28 2012-05-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7504663B2 (en) 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
US7606066B2 (en) * 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535478A (zh) * 2001-06-12 2004-10-06 �Ҵ���˾ 埋入式电路及器件的方法与结构

Also Published As

Publication number Publication date
US9184173B2 (en) 2015-11-10
KR101404439B1 (ko) 2014-06-10
KR101420603B1 (ko) 2014-07-17
JP2009033141A (ja) 2009-02-12
US20110073934A1 (en) 2011-03-31
US7851279B2 (en) 2010-12-14
WO2009004919A1 (en) 2009-01-08
JP5606602B2 (ja) 2014-10-15
JP2014017507A (ja) 2014-01-30
US20140035028A1 (en) 2014-02-06
KR20100047853A (ko) 2010-05-10
US8022469B2 (en) 2011-09-20
CN101689532A (zh) 2010-03-31
US20090001452A1 (en) 2009-01-01
US20110291173A1 (en) 2011-12-01
US8581332B2 (en) 2013-11-12
KR20130069885A (ko) 2013-06-26

Similar Documents

Publication Publication Date Title
US8022469B2 (en) Semiconductor device and manufacturing method thereof
US7821002B2 (en) Semiconductor device and manufacturing method thereof
TWI466269B (zh) 非揮發性記憶體
US7867838B2 (en) Semiconductor device and method for manufacturing the same
CN101068019B (zh) 非易失半导体存储器件
JP5128172B2 (ja) 半導体装置の作製方法
TW200805677A (en) Nonvolatile semiconductor memory device
US8872251B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
US7652321B2 (en) Semiconductor device and manufacturing method of the same
JP5297610B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130612

Termination date: 20210611