JP2009033141A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

Info

Publication number
JP2009033141A
JP2009033141A JP2008167699A JP2008167699A JP2009033141A JP 2009033141 A JP2009033141 A JP 2009033141A JP 2008167699 A JP2008167699 A JP 2008167699A JP 2008167699 A JP2008167699 A JP 2008167699A JP 2009033141 A JP2009033141 A JP 2009033141A
Authority
JP
Japan
Prior art keywords
film
insulating film
semiconductor
conductive film
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008167699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009033141A5 (enExample
Inventor
Yoshie Moriwaka
圭恵 森若
Tetsuya Kakehata
哲弥 掛端
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008167699A priority Critical patent/JP2009033141A/ja
Publication of JP2009033141A publication Critical patent/JP2009033141A/ja
Publication of JP2009033141A5 publication Critical patent/JP2009033141A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008167699A 2007-06-29 2008-06-26 半導体装置及びその作製方法 Withdrawn JP2009033141A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008167699A JP2009033141A (ja) 2007-06-29 2008-06-26 半導体装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007173103 2007-06-29
JP2008167699A JP2009033141A (ja) 2007-06-29 2008-06-26 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013191254A Division JP5606602B2 (ja) 2007-06-29 2013-09-16 半導体装置及び電子機器

Publications (2)

Publication Number Publication Date
JP2009033141A true JP2009033141A (ja) 2009-02-12
JP2009033141A5 JP2009033141A5 (enExample) 2011-05-26

Family

ID=40159337

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008167699A Withdrawn JP2009033141A (ja) 2007-06-29 2008-06-26 半導体装置及びその作製方法
JP2013191254A Expired - Fee Related JP5606602B2 (ja) 2007-06-29 2013-09-16 半導体装置及び電子機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013191254A Expired - Fee Related JP5606602B2 (ja) 2007-06-29 2013-09-16 半導体装置及び電子機器

Country Status (5)

Country Link
US (4) US7851279B2 (enExample)
JP (2) JP2009033141A (enExample)
KR (2) KR101404439B1 (enExample)
CN (1) CN101689532B (enExample)
WO (1) WO2009004919A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124563A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 不揮発性メモリ素子を有する装置
JP2017143239A (ja) * 2015-08-04 2017-08-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作成方法
JP2022044680A (ja) * 2009-10-16 2022-03-17 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101534009B1 (ko) * 2008-10-21 2015-07-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20190066086A (ko) 2009-11-06 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
KR20150033155A (ko) * 2013-09-23 2015-04-01 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102220450B1 (ko) 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10297653B2 (en) 2014-07-23 2019-05-21 Sony Corporation Display device, method of manufacturing display device, and electronic apparatus
US9847406B2 (en) 2015-08-27 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, resistor circuit, display device, and electronic device
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
KR102763624B1 (ko) * 2018-02-12 2025-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치
US11756934B2 (en) * 2021-04-16 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JP2001298100A (ja) * 2000-02-01 2001-10-26 Semiconductor Energy Lab Co Ltd 不揮発性メモリ、半導体装置、およびその作製方法
JP2005259334A (ja) * 2004-02-10 2005-09-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリ
JP2006013481A (ja) * 2004-05-28 2006-01-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060034A (en) 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
JP3070099B2 (ja) * 1990-12-13 2000-07-24 ソニー株式会社 スタティックｒａｍ
JP3082288B2 (ja) * 1991-05-09 2000-08-28 カシオ計算機株式会社 薄膜メモリトランジスタ及びその製造方法
JPH05145073A (ja) * 1991-11-22 1993-06-11 Seiko Epson Corp 相補型薄膜トランジスタ
JPH0730001A (ja) * 1993-07-09 1995-01-31 Mitsubishi Electric Corp 半導体装置
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JP3253808B2 (ja) 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5877054A (en) 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
US5978270A (en) 1995-08-31 1999-11-02 Hitachi, Ltd. Semiconductor non-volatile memory device and computer system using the same
KR100205388B1 (ko) 1995-09-12 1999-07-01 구자홍 액정표시장치 및 그 제조방법
JPH09186335A (ja) * 1995-12-27 1997-07-15 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
TW347567B (en) 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6060743A (en) 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4318768B2 (ja) 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP3265569B2 (ja) * 1998-04-15 2002-03-11 日本電気株式会社 半導体装置及びその製造方法
JP2000200842A (ja) 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP4531194B2 (ja) 1999-04-15 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置及び電子機器
WO2001024265A1 (fr) 1999-09-30 2001-04-05 Rohm, Co., Ltd. Memoire non volatile
JP2001148434A (ja) 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
WO2001047012A1 (en) 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
US6423644B1 (en) 2000-07-12 2002-07-23 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2002113286A (ja) 2000-10-06 2002-04-16 Matsushita Electric Works Ltd 洗濯機用防水パン
JP4815695B2 (ja) * 2001-05-24 2011-11-16 ソニー株式会社 不揮発性半導体メモリ装置の動作方法
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
KR100487523B1 (ko) 2002-04-15 2005-05-03 삼성전자주식회사 부유트랩형 비휘발성 메모리 소자 및 그 제조방법
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6730957B1 (en) 2002-11-05 2004-05-04 Winbond Electronics Corporation Non-volatile memory compatible with logic devices and fabrication method thereof
JP2005005516A (ja) * 2003-06-12 2005-01-06 Renesas Technology Corp 半導体装置およびその製造方法
US7652321B2 (en) 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7504663B2 (en) 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
US7606066B2 (en) * 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JP2001298100A (ja) * 2000-02-01 2001-10-26 Semiconductor Energy Lab Co Ltd 不揮発性メモリ、半導体装置、およびその作製方法
JP2005259334A (ja) * 2004-02-10 2005-09-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリ
JP2006013481A (ja) * 2004-05-28 2006-01-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022044680A (ja) * 2009-10-16 2022-03-17 株式会社半導体エネルギー研究所 半導体装置
JP7383739B2 (ja) 2009-10-16 2023-11-20 株式会社半導体エネルギー研究所 半導体装置
US11837461B2 (en) 2009-10-16 2023-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2024012542A (ja) * 2009-10-16 2024-01-30 株式会社半導体エネルギー研究所 半導体装置
JP7482310B2 (ja) 2009-10-16 2024-05-13 株式会社半導体エネルギー研究所 半導体装置
US12389631B2 (en) 2009-10-16 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011124563A (ja) * 2009-11-13 2011-06-23 Semiconductor Energy Lab Co Ltd 不揮発性メモリ素子を有する装置
JP2017143239A (ja) * 2015-08-04 2017-08-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作成方法
US11217668B2 (en) 2015-08-04 2022-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US20140035028A1 (en) 2014-02-06
US20090001452A1 (en) 2009-01-01
KR101420603B1 (ko) 2014-07-17
KR20130069885A (ko) 2013-06-26
KR101404439B1 (ko) 2014-06-10
JP5606602B2 (ja) 2014-10-15
US20110291173A1 (en) 2011-12-01
CN101689532B (zh) 2013-06-12
WO2009004919A1 (en) 2009-01-08
US8581332B2 (en) 2013-11-12
KR20100047853A (ko) 2010-05-10
JP2014017507A (ja) 2014-01-30
US7851279B2 (en) 2010-12-14
US8022469B2 (en) 2011-09-20
US20110073934A1 (en) 2011-03-31
CN101689532A (zh) 2010-03-31
US9184173B2 (en) 2015-11-10

Similar Documents

Publication Publication Date Title
JP5606602B2 (ja) 半導体装置及び電子機器
TWI466269B (zh) 非揮發性記憶體
US7875931B2 (en) Semiconductor device with isolation using impurity
US7696562B2 (en) Semiconductor device
US20070281400A1 (en) Semiconductor device and manufacturing method thereof
KR20070095782A (ko) 불휘발성 반도체 기억장치
US8872251B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
JP5305620B2 (ja) 不揮発性メモリ
JP2008047884A (ja) 半導体装置の作製方法及び不揮発性半導体記憶装置の作製方法
JP5297610B2 (ja) 半導体装置の作製方法
JP5466815B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110411

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130430

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130618

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130820

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130917