KR101404439B1 - 메모리 장치 및 전자 기기 - Google Patents

메모리 장치 및 전자 기기 Download PDF

Info

Publication number
KR101404439B1
KR101404439B1 KR1020137014926A KR20137014926A KR101404439B1 KR 101404439 B1 KR101404439 B1 KR 101404439B1 KR 1020137014926 A KR1020137014926 A KR 1020137014926A KR 20137014926 A KR20137014926 A KR 20137014926A KR 101404439 B1 KR101404439 B1 KR 101404439B1
Authority
KR
South Korea
Prior art keywords
insulating film
transistor
film
memory
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020137014926A
Other languages
English (en)
Korean (ko)
Other versions
KR20130069885A (ko
Inventor
타메이 다카노
테츠야 가케하타
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20130069885A publication Critical patent/KR20130069885A/ko
Application granted granted Critical
Publication of KR101404439B1 publication Critical patent/KR101404439B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020137014926A 2007-06-29 2008-06-11 메모리 장치 및 전자 기기 Expired - Fee Related KR101404439B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-173103 2007-06-29
JP2007173103 2007-06-29
PCT/JP2008/061077 WO2009004919A1 (en) 2007-06-29 2008-06-11 Semiconductor device and manufacturing method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001976A Division KR101420603B1 (ko) 2007-06-29 2008-06-11 반도체 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20130069885A KR20130069885A (ko) 2013-06-26
KR101404439B1 true KR101404439B1 (ko) 2014-06-10

Family

ID=40159337

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137014926A Expired - Fee Related KR101404439B1 (ko) 2007-06-29 2008-06-11 메모리 장치 및 전자 기기
KR1020107001976A Expired - Fee Related KR101420603B1 (ko) 2007-06-29 2008-06-11 반도체 장치 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020107001976A Expired - Fee Related KR101420603B1 (ko) 2007-06-29 2008-06-11 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (4) US7851279B2 (enExample)
JP (2) JP2009033141A (enExample)
KR (2) KR101404439B1 (enExample)
CN (1) CN101689532B (enExample)
WO (1) WO2009004919A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101534009B1 (ko) * 2008-10-21 2015-07-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20190066086A (ko) 2009-11-06 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
KR20150033155A (ko) * 2013-09-23 2015-04-01 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102220450B1 (ko) 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10297653B2 (en) 2014-07-23 2019-05-21 Sony Corporation Display device, method of manufacturing display device, and electronic apparatus
US10553690B2 (en) 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9847406B2 (en) 2015-08-27 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, resistor circuit, display device, and electronic device
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
KR102763624B1 (ko) * 2018-02-12 2025-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치
US11756934B2 (en) * 2021-04-16 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145073A (ja) * 1991-11-22 1993-06-11 Seiko Epson Corp 相補型薄膜トランジスタ
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JP2001298100A (ja) * 2000-02-01 2001-10-26 Semiconductor Energy Lab Co Ltd 不揮発性メモリ、半導体装置、およびその作製方法
JP2006013481A (ja) * 2004-05-28 2006-01-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060034A (en) 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
JP3070099B2 (ja) * 1990-12-13 2000-07-24 ソニー株式会社 スタティックｒａｍ
JP3082288B2 (ja) * 1991-05-09 2000-08-28 カシオ計算機株式会社 薄膜メモリトランジスタ及びその製造方法
JPH0730001A (ja) * 1993-07-09 1995-01-31 Mitsubishi Electric Corp 半導体装置
JP2643833B2 (ja) 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JP3253808B2 (ja) 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5877054A (en) 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
US5978270A (en) 1995-08-31 1999-11-02 Hitachi, Ltd. Semiconductor non-volatile memory device and computer system using the same
KR100205388B1 (ko) 1995-09-12 1999-07-01 구자홍 액정표시장치 및 그 제조방법
JPH09186335A (ja) * 1995-12-27 1997-07-15 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
TW347567B (en) 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6060743A (en) 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4318768B2 (ja) 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP3265569B2 (ja) * 1998-04-15 2002-03-11 日本電気株式会社 半導体装置及びその製造方法
JP2000200842A (ja) 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
JP4531194B2 (ja) 1999-04-15 2010-08-25 株式会社半導体エネルギー研究所 電気光学装置及び電子機器
WO2001024265A1 (fr) 1999-09-30 2001-04-05 Rohm, Co., Ltd. Memoire non volatile
JP2001148434A (ja) 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
WO2001047012A1 (en) 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
US6423644B1 (en) 2000-07-12 2002-07-23 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2002113286A (ja) 2000-10-06 2002-04-16 Matsushita Electric Works Ltd 洗濯機用防水パン
JP4815695B2 (ja) * 2001-05-24 2011-11-16 ソニー株式会社 不揮発性半導体メモリ装置の動作方法
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
KR100487523B1 (ko) 2002-04-15 2005-05-03 삼성전자주식회사 부유트랩형 비휘발성 메모리 소자 및 그 제조방법
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6730957B1 (en) 2002-11-05 2004-05-04 Winbond Electronics Corporation Non-volatile memory compatible with logic devices and fabrication method thereof
JP2005005516A (ja) * 2003-06-12 2005-01-06 Renesas Technology Corp 半導体装置およびその製造方法
EP1714294B1 (en) 2004-02-10 2016-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
US7652321B2 (en) 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7504663B2 (en) 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
US7606066B2 (en) * 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145073A (ja) * 1991-11-22 1993-06-11 Seiko Epson Corp 相補型薄膜トランジスタ
JPH1154761A (ja) * 1997-08-01 1999-02-26 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
JP2001298100A (ja) * 2000-02-01 2001-10-26 Semiconductor Energy Lab Co Ltd 不揮発性メモリ、半導体装置、およびその作製方法
JP2006013481A (ja) * 2004-05-28 2006-01-12 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
US20140035028A1 (en) 2014-02-06
US20090001452A1 (en) 2009-01-01
KR101420603B1 (ko) 2014-07-17
KR20130069885A (ko) 2013-06-26
JP5606602B2 (ja) 2014-10-15
US20110291173A1 (en) 2011-12-01
CN101689532B (zh) 2013-06-12
WO2009004919A1 (en) 2009-01-08
US8581332B2 (en) 2013-11-12
KR20100047853A (ko) 2010-05-10
JP2009033141A (ja) 2009-02-12
JP2014017507A (ja) 2014-01-30
US7851279B2 (en) 2010-12-14
US8022469B2 (en) 2011-09-20
US20110073934A1 (en) 2011-03-31
CN101689532A (zh) 2010-03-31
US9184173B2 (en) 2015-11-10

Similar Documents

Publication Publication Date Title
KR101404439B1 (ko) 메모리 장치 및 전자 기기
TWI466269B (zh) 非揮發性記憶體
US7742351B2 (en) Semiconductor device and electronic device
US8513072B2 (en) Manufacturing method of semiconductor device with element isolation region formed within
US7696562B2 (en) Semiconductor device
US7692232B2 (en) Nonvolatile semiconductor memory device
US8872251B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
JP2008164794A (ja) 表示装置及び表示システム
JP5305620B2 (ja) 不揮発性メモリ

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

St.27 status event code: A-0-1-A10-A18-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170504

Year of fee payment: 4

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20180427

Year of fee payment: 5

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PC1903 Unpaid annual fee

Not in force date: 20210531

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210531

St.27 status event code: N-4-6-H10-H13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000