JP2009021561A5 - - Google Patents
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- Publication number
- JP2009021561A5 JP2009021561A5 JP2008139151A JP2008139151A JP2009021561A5 JP 2009021561 A5 JP2009021561 A5 JP 2009021561A5 JP 2008139151 A JP2008139151 A JP 2008139151A JP 2008139151 A JP2008139151 A JP 2008139151A JP 2009021561 A5 JP2009021561 A5 JP 2009021561A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- active layer
- memory according
- layer region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 16
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000005083 Zinc sulfide Substances 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminum antimony Chemical compound 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008139151A JP5305739B2 (ja) | 2007-06-12 | 2008-05-28 | キャパシタレスメモリ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007154610 | 2007-06-12 | ||
| JP2007154610 | 2007-06-12 | ||
| JP2008139151A JP5305739B2 (ja) | 2007-06-12 | 2008-05-28 | キャパシタレスメモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009021561A JP2009021561A (ja) | 2009-01-29 |
| JP2009021561A5 true JP2009021561A5 (enExample) | 2011-04-28 |
| JP5305739B2 JP5305739B2 (ja) | 2013-10-02 |
Family
ID=40131457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008139151A Expired - Fee Related JP5305739B2 (ja) | 2007-06-12 | 2008-05-28 | キャパシタレスメモリ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7755105B2 (enExample) |
| JP (1) | JP5305739B2 (enExample) |
| KR (1) | KR101448899B1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7750368B2 (en) * | 2008-06-13 | 2010-07-06 | Macronix International Co., Ltd. | Memory device |
| US8278167B2 (en) | 2008-12-18 | 2012-10-02 | Micron Technology, Inc. | Method and structure for integrating capacitor-less memory cell with logic |
| CN104600074A (zh) * | 2009-11-06 | 2015-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
| US20120019284A1 (en) * | 2010-07-26 | 2012-01-26 | Infineon Technologies Austria Ag | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor |
| KR20120060407A (ko) * | 2010-12-02 | 2012-06-12 | 삼성전자주식회사 | 표시 기판, 이의 제조 방법 및 이를 포함하는 터치 표시 장치 |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8969924B2 (en) | 2012-05-21 | 2015-03-03 | The Board Of Trustees Of The Leland Stanford Junior University | Transistor-based apparatuses, systems and methods |
| CN121040234A (zh) * | 2024-03-28 | 2025-11-28 | 京东方科技集团股份有限公司 | 晶体管、驱动背板及制备方法和显示装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPH0824131B2 (ja) * | 1985-10-07 | 1996-03-06 | 株式会社日立製作所 | 電界効果トランジスタ |
| US4755865A (en) | 1986-01-21 | 1988-07-05 | Motorola Inc. | Means for stabilizing polycrystalline semiconductor layers |
| US4899202A (en) | 1988-07-08 | 1990-02-06 | Texas Instruments Incorporated | High performance silicon-on-insulator transistor with body node to source node connection |
| US5821563A (en) | 1990-12-25 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from reverse leakage and throw leakage |
| US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
| JP3407232B2 (ja) | 1995-02-08 | 2003-05-19 | 富士通株式会社 | 半導体記憶装置及びその動作方法 |
| US5914504A (en) * | 1995-06-16 | 1999-06-22 | Imec Vzw | DRAM applications using vertical MISFET devices |
| JPH1092952A (ja) | 1996-09-18 | 1998-04-10 | Toshiba Corp | 半導体記憶装置 |
| JPH11204661A (ja) * | 1997-10-29 | 1999-07-30 | Sony Corp | 半導体メモリセル及びその製造方法 |
| AU2685700A (en) * | 1999-02-24 | 2000-09-14 | Carlos J.R.P. Augusto | Misfet |
| JP4216483B2 (ja) | 2001-02-15 | 2009-01-28 | 株式会社東芝 | 半導体メモリ装置 |
| US6861689B2 (en) * | 2002-11-08 | 2005-03-01 | Freescale Semiconductor, Inc. | One transistor DRAM cell structure and method for forming |
| KR101019337B1 (ko) * | 2004-03-12 | 2011-03-07 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| US7518196B2 (en) * | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
-
2008
- 2008-05-20 KR KR1020080046562A patent/KR101448899B1/ko not_active Expired - Fee Related
- 2008-05-27 US US12/127,424 patent/US7755105B2/en not_active Expired - Fee Related
- 2008-05-28 JP JP2008139151A patent/JP5305739B2/ja not_active Expired - Fee Related