WO2008132862A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008132862A1
WO2008132862A1 PCT/JP2008/052671 JP2008052671W WO2008132862A1 WO 2008132862 A1 WO2008132862 A1 WO 2008132862A1 JP 2008052671 W JP2008052671 W JP 2008052671W WO 2008132862 A1 WO2008132862 A1 WO 2008132862A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
thin film
semiconductor
region
film transistor
Prior art date
Application number
PCT/JP2008/052671
Other languages
English (en)
French (fr)
Inventor
Naoki Makita
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to EP08711495A priority Critical patent/EP2141742A1/en
Priority to US12/530,612 priority patent/US8575614B2/en
Priority to JP2009511701A priority patent/JPWO2008132862A1/ja
Priority to CN2008800127452A priority patent/CN101663758B/zh
Publication of WO2008132862A1 publication Critical patent/WO2008132862A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate

Abstract

　半導体装置１００は、チャネル領域１１４、ソース領域およびドレイン領域１１２を含む半導体層Ｓ１と、チャネル領域１１４の導電性を制御するゲート電極１０９と、半導体層とゲート電極１０９との間に設けられたゲート絶縁膜１０８とを有する薄膜トランジスタ１２３、および、少なくともｎ型領域１１３とｐ型領域１１７とを含む半導体層Ｓ２を有する薄膜ダイオード１２４を備える。薄膜トランジスタ１２３の半導体層Ｓ１および薄膜ダイオード１２４の半導体層Ｓ２は、同一の結晶質半導体膜を結晶化することによって形成された結晶質半導体層であり、薄膜トランジスタ１２３の半導体層Ｓ１の結晶状態と、薄膜ダイオード１２４の半導体層Ｓ２の結晶状態とは異なっている。
PCT/JP2008/052671 2007-04-25 2008-02-18 半導体装置およびその製造方法 WO2008132862A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08711495A EP2141742A1 (en) 2007-04-25 2008-02-18 Semiconductor device, and its manufacturing method
US12/530,612 US8575614B2 (en) 2007-04-25 2008-02-18 Display device
JP2009511701A JPWO2008132862A1 (ja) 2007-04-25 2008-02-18 半導体装置およびその製造方法
CN2008800127452A CN101663758B (zh) 2007-04-25 2008-02-18 半导体装置及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007116098 2007-04-25
JP2007-116098 2007-04-25

Publications (1)

Publication Number Publication Date
WO2008132862A1 true WO2008132862A1 (ja) 2008-11-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052671 WO2008132862A1 (ja) 2007-04-25 2008-02-18 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US8575614B2 (ja)
EP (1) EP2141742A1 (ja)
JP (1) JPWO2008132862A1 (ja)
CN (1) CN101663758B (ja)
WO (1) WO2008132862A1 (ja)

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WO2010058532A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 半導体装置およびその製造方法、ならびに半導体装置を用いた表示装置
WO2010095401A1 (ja) * 2009-02-19 2010-08-26 シャープ株式会社 半導体装置および表示装置
WO2010119589A1 (ja) * 2009-04-17 2010-10-21 シャープ株式会社 液晶パネル
WO2011024577A1 (ja) * 2009-08-25 2011-03-03 シャープ株式会社 光センサ、半導体装置、及び液晶パネル
WO2011059038A1 (ja) 2009-11-13 2011-05-19 シャープ株式会社 半導体装置およびその製造方法
US20110198608A1 (en) * 2008-10-27 2011-08-18 Sharp Kabushiki Kaisha Semiconductor device, method for manufacturing same, and display device
WO2011129441A1 (ja) 2010-04-16 2011-10-20 シャープ株式会社 半導体装置
WO2012060320A1 (ja) * 2010-11-04 2012-05-10 シャープ株式会社 半導体装置およびその製造方法
US8766337B2 (en) 2009-11-27 2014-07-01 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US8829526B2 (en) 2009-01-23 2014-09-09 Sharp Kabushiki Kaisha Semiconductor device, method for manufacturing same, and display device
US9018631B2 (en) 2010-06-15 2015-04-28 Sharp Kabushiki Kaisha Semiconductor device and display device equipped with same
JP2015197569A (ja) * 2014-04-01 2015-11-09 セイコーエプソン株式会社 電気光学装置、電子機器および半導体装置
CN113711376A (zh) * 2019-04-17 2021-11-26 株式会社日本显示器 检测装置
JP2022082542A (ja) * 2010-10-07 2022-06-02 株式会社半導体エネルギー研究所 撮像装置、表示装置、電子機器

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WO2010038419A1 (ja) * 2008-09-30 2010-04-08 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
JP5314040B2 (ja) * 2008-10-23 2013-10-16 シャープ株式会社 半導体装置の製造方法
WO2010134571A1 (ja) 2009-05-21 2010-11-25 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
KR20130026404A (ko) 2009-09-24 2013-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
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CN103109314B (zh) 2010-04-28 2016-05-04 株式会社半导体能源研究所 半导体显示装置及其驱动方法
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US20100065851A1 (en) 2010-03-18

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