JP4621801B2 - 画像表示装置 - Google Patents
画像表示装置 Download PDFInfo
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- JP4621801B2 JP4621801B2 JP2009543758A JP2009543758A JP4621801B2 JP 4621801 B2 JP4621801 B2 JP 4621801B2 JP 2009543758 A JP2009543758 A JP 2009543758A JP 2009543758 A JP2009543758 A JP 2009543758A JP 4621801 B2 JP4621801 B2 JP 4621801B2
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- Prior art keywords
- light
- display device
- image display
- photodiode
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 98
- 230000035945 sensitivity Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 48
- 238000001514 detection method Methods 0.000 claims description 35
- 239000011159 matrix material Substances 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 29
- 238000002834 transmittance Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 130
- 239000010408 film Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000005520 cutting process Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
以下、本発明の実施の形態における画像表示装置について、液晶表示装置として用いたものを例として図面を参照しながら説明する。図1は、本発明の実施の形態における液晶表示装置の構成を部分的に示す拡大平面図である。また、図2は、図1中の切断線A−A´に沿って切断して得られた断面を示す断面図である。
ネルの厚み方向において、フォトダイオードの受光感度が低い赤色(R)の着色層と重なるように配置することが極めて有効である。本実施の形態にかかるフォトダイオード17の受光感度は、図3に示した波長特性を有しているため、フォトダイオードを青色(B)着色層6aと重なり合うように設けた場合と比較して、赤色(R)着色層に重なり合うようにすることで、受光感度が約1/20程度となり、表示画像の反射光が受光信号のノイズとなる可能性を大幅に低減できることが分かる。
Claims (8)
- アクティブマトリクス基板と対向基板とを備える画像検出機能付き画像表示パネルを備えた画像表示装置であって、
前記アクティブマトリクス基板は、マトリクス状に配置された複数の画素と、表示領域内に前記画素に対応して配置された複数のフォトセンサを備え、
前記複数の画素は、それぞれ複数のサブ画素を有し、
前記サブ画素に対応して各色の着色層が形成されたカラーフィルタを備え、
前記フォトセンサは、前記各色の着色層のなかで、最も短波長側の色の前記着色層を透過する光に対する受光感度が、最も長波長側の色の前記着色層を透過する光に対する受光感度よりも高い入射光波長特性を有し、かつ、前記画像表示パネルの厚さ方向において、前記フォトセンサの光検出領域が複数の前記着色層の中で前記最も長波長側の色の前記着色層に重なるように配置されていることを特徴とする画像表示装置。 - 前記カラーフィルタが、前記対向基板に設けられている請求項1に記載の画像表示装置。
- 前記カラーフィルタが、前記アクティブマトリクス基板に設けられている請求項1に記載の画像表示装置。
- 前記フォトセンサの光検出領域に重なるように配置された着色層は、透過率が周囲よりも高い高透過部を有し、
前記画像表示パネルの厚さ方向において、前記高透過部は前記光検出領域と少なくとも一部が重なるように設けられている請求項1〜3のいずれか1項に記載の画像表示装置。 - 前記高透過部の面積は、前記フォトセンサの前記光検出領域の面積よりも大きく、かつ、前記画像表示パネルの厚さ方向において、前記高透過部が前記光検出領域を完全に覆うように形成されている請求項4に記載の画像表示装置。
- マトリクス状に配置された前記画素の行方向または列方向のいずれか一つの方向において、同じ色の前記着色層が連続して配列されていて、前記フォトセンサの前記光検出領域が、前記同じ色の着色層が連続して配列されている方向に長手方向をおく縦長形状である請求項4または5に記載の画像表示装置。
- 前記画像表示パネルが液晶パネルである請求項1〜6のいずれか1項に記載の画像表示装置。
- 前記液晶パネルに光を照射するバックライトをさらに備え、
前記フォトセンサと前記バックライトとの間に遮光膜を有し、前記液晶パネルの厚さ方向において、前記遮光膜が、前記高透過部を完全に覆うように形成されている請求項7に記載の画像表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007309263 | 2007-11-29 | ||
JP2007309263 | 2007-11-29 | ||
PCT/JP2008/070870 WO2009069493A1 (ja) | 2007-11-29 | 2008-11-17 | 画像表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4621801B2 true JP4621801B2 (ja) | 2011-01-26 |
JPWO2009069493A1 JPWO2009069493A1 (ja) | 2011-04-14 |
Family
ID=40678395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009543758A Expired - Fee Related JP4621801B2 (ja) | 2007-11-29 | 2008-11-17 | 画像表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8248395B2 (ja) |
EP (1) | EP2214150A4 (ja) |
JP (1) | JP4621801B2 (ja) |
CN (1) | CN101878495B (ja) |
WO (1) | WO2009069493A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101663758B (zh) * | 2007-04-25 | 2011-12-14 | 夏普株式会社 | 半导体装置及其制造方法 |
US8766337B2 (en) * | 2009-11-27 | 2014-07-01 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
CN105005147B (zh) * | 2015-07-30 | 2017-03-29 | 重庆卓美华视光电有限公司 | 一种像素设计方法及裸眼3d立体显示装置 |
CN108630113B (zh) * | 2017-03-22 | 2020-06-30 | 京东方科技集团股份有限公司 | 显示装置 |
CN107515488B (zh) * | 2017-08-01 | 2020-06-23 | 惠科股份有限公司 | 一种显示面板 |
CN114002870A (zh) * | 2020-07-16 | 2022-02-01 | 群创光电股份有限公司 | 显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006323199A (ja) * | 2005-05-19 | 2006-11-30 | Mitsubishi Electric Corp | 光センサー一体型液晶表示装置 |
JP2006330578A (ja) * | 2005-05-30 | 2006-12-07 | Sony Corp | 液晶表示装置 |
JP2007011152A (ja) * | 2005-07-01 | 2007-01-18 | Toshiba Matsushita Display Technology Co Ltd | 平面表示装置 |
JP2007033789A (ja) * | 2005-07-26 | 2007-02-08 | Sony Corp | 表示装置 |
JP2007271782A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Matsushita Display Technology Co Ltd | 画像取込機能付き表示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4154874B2 (ja) * | 2001-07-30 | 2008-09-24 | カシオ計算機株式会社 | 指紋読取装置および指紋読取方法 |
AU2002336341A1 (en) * | 2002-02-20 | 2003-09-09 | Planar Systems, Inc. | Light sensitive display |
US7209107B2 (en) * | 2002-11-06 | 2007-04-24 | Sharp Kabushiki Kaisha | Liquid crystal display device and manufacturing method for the same |
US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
US7123317B2 (en) * | 2003-10-14 | 2006-10-17 | Monerey International, Ltd. | Liquid crystal display with fluorescent material |
JP2007072318A (ja) | 2005-09-08 | 2007-03-22 | Toshiba Matsushita Display Technology Co Ltd | 表示装置 |
US20070109239A1 (en) * | 2005-11-14 | 2007-05-17 | Den Boer Willem | Integrated light sensitive liquid crystal display |
US20070187787A1 (en) * | 2006-02-16 | 2007-08-16 | Ackerson Kristin M | Pixel sensor structure including light pipe and method for fabrication thereof |
WO2008044370A1 (fr) * | 2006-10-11 | 2008-04-17 | Sharp Kabushiki Kaisha | Affichage à cristaux liquides |
CN101523285A (zh) * | 2006-10-11 | 2009-09-02 | 夏普株式会社 | 液晶显示装置 |
WO2008044368A1 (fr) | 2006-10-11 | 2008-04-17 | Sharp Kabushiki Kaisha | Affichage à cristaux liquides |
US8164719B2 (en) * | 2006-10-13 | 2012-04-24 | Sharp Kabushiki Kaisha | Liquid crystal display device |
JP4395801B2 (ja) * | 2007-11-13 | 2010-01-13 | ソニー株式会社 | 面状光源装置及び液晶表示装置組立体 |
-
2008
- 2008-11-17 JP JP2009543758A patent/JP4621801B2/ja not_active Expired - Fee Related
- 2008-11-17 US US12/744,997 patent/US8248395B2/en not_active Expired - Fee Related
- 2008-11-17 CN CN2008801179990A patent/CN101878495B/zh not_active Expired - Fee Related
- 2008-11-17 WO PCT/JP2008/070870 patent/WO2009069493A1/ja active Application Filing
- 2008-11-17 EP EP08853866A patent/EP2214150A4/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006323199A (ja) * | 2005-05-19 | 2006-11-30 | Mitsubishi Electric Corp | 光センサー一体型液晶表示装置 |
JP2006330578A (ja) * | 2005-05-30 | 2006-12-07 | Sony Corp | 液晶表示装置 |
JP2007011152A (ja) * | 2005-07-01 | 2007-01-18 | Toshiba Matsushita Display Technology Co Ltd | 平面表示装置 |
JP2007033789A (ja) * | 2005-07-26 | 2007-02-08 | Sony Corp | 表示装置 |
JP2007271782A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Matsushita Display Technology Co Ltd | 画像取込機能付き表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101878495B (zh) | 2012-04-25 |
US20100302223A1 (en) | 2010-12-02 |
JPWO2009069493A1 (ja) | 2011-04-14 |
EP2214150A1 (en) | 2010-08-04 |
CN101878495A (zh) | 2010-11-03 |
WO2009069493A1 (ja) | 2009-06-04 |
EP2214150A4 (en) | 2011-02-23 |
US8248395B2 (en) | 2012-08-21 |
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