WO2008044370A1 - Affichage à cristaux liquides - Google Patents

Affichage à cristaux liquides Download PDF

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Publication number
WO2008044370A1
WO2008044370A1 PCT/JP2007/062307 JP2007062307W WO2008044370A1 WO 2008044370 A1 WO2008044370 A1 WO 2008044370A1 JP 2007062307 W JP2007062307 W JP 2007062307W WO 2008044370 A1 WO2008044370 A1 WO 2008044370A1
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WO
WIPO (PCT)
Prior art keywords
liquid crystal
crystal display
photodiode
display device
pixels
Prior art date
Application number
PCT/JP2007/062307
Other languages
English (en)
Japanese (ja)
Inventor
Hiromi Katoh
Christopher Brown
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008044370A1 publication Critical patent/WO2008044370A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters

Definitions

  • the present invention relates to a liquid crystal display device including a photodiode that reacts to light incident from the observer side of a display screen.
  • a liquid crystal display device includes a liquid crystal display panel and a knock light that illuminates the liquid crystal display panel from the back.
  • a liquid crystal display panel is configured by sandwiching a liquid crystal layer between an active matrix substrate and a counter substrate.
  • An active matrix substrate is formed by forming a plurality of pixels in a matrix on a glass substrate.
  • one pixel is usually composed of three sub-pixels.
  • Each sub-pixel is composed of a TFT and a pixel electrode.
  • the counter substrate includes a counter electrode and a color filter on a glass substrate.
  • the color filter has a red (R), green (G), or blue (B) colored layer for each sub-pixel.
  • the voltage applied between each pixel electrode and the counter electrode is adjusted, and the transmittance of the liquid crystal layer is adjusted for each sub-pixel.
  • an image is displayed on the display screen by the illumination light of the backlight transmitted through the liquid crystal layer and the colored layer.
  • a conventional liquid crystal display device has a function of displaying an image. Recently, however, a liquid crystal display device having a function of capturing an image has been proposed (for example, a patent) Refer to Document 1.) o
  • a liquid crystal display device disclosed in Patent Document 1 a plurality of photodiodes are formed in a matrix on an active matrix substrate, and the liquid crystal display panel functions as an area sensor.
  • each photodiode uses a TFT process to form a p-type semiconductor region, photodetection region (intrinsic region), and n-type The semiconductor regions are formed in order.
  • this photodiode reacts even with illumination light from a knock light that is not only incident on the observer side force.
  • Patent Document 1 unlike a general liquid crystal display device, a knock light is arranged on the counter substrate side, and is connected to the n layer of the photodiode in order to block the illumination light.
  • the wiring covers the upper surface of the i layer.
  • the photodiode can be prevented from reacting to the illumination light.
  • Patent Document 1 Japanese Laid-Open Patent Publication No. 2006-3857 (Page 7, Figures 5 and 6)
  • the second light-shielding film is formed of a conductive metal material. Further, only a thin insulating layer exists between the silicon film constituting the photodiode and the second light shielding film. For this reason, a depletion layer is less likely to occur in the light detection region. As a result, the liquid crystal display device of Patent Document 1 has a problem that only a low-capacity picked-up image with which dark current is easily generated in a photodiode can be obtained.
  • An object of the present invention is to provide a liquid crystal display device that can prevent the photodiode from reacting with illumination light while solving the above problems and suppressing the generation of dark current in the photodiode. .
  • a liquid crystal display device includes a liquid crystal display panel and a knocklight, and the liquid crystal display panel includes an active matrix substrate in which a plurality of pixels are arranged in a matrix, A liquid crystal layer; and a counter substrate provided with a color filter.
  • Each of the plurality of pixels includes three sub-pixels.
  • the matrix substrate further includes a plurality of photodiodes in a display area.
  • the photodiode has a characteristic that sensitivity is increased as the wavelength of incident light is shorter, and the light detection area of the photodiode is In the thickness direction of the liquid crystal display device, the liquid crystal display device is disposed so as to overlap the red colored layer.
  • the red colored layer is interposed between the photodiode and the backlight. Therefore, the force that only the red light out of the light components contained in the illumination light is directed to the photodiode.
  • the photodiode used in the present invention has a short wavelength like red light and low sensitivity to light. It has the characteristic that it is.
  • the liquid crystal display device of the present invention it is possible to suppress the photodiode from reacting with the illumination light.
  • it is not necessary to provide a light-shielding film with a conductive metal material generation of dark current in the photodiode can be suppressed.
  • FIG. 1 is a plan view partially showing a configuration of a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a cross-section obtained by cutting along cutting line A-- FIG.
  • FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS. 1 and 2.
  • a liquid crystal display device includes a liquid crystal display panel and a backlight, and the liquid crystal display panel includes an active matrix substrate in which a plurality of pixels are arranged in a matrix, a liquid crystal layer, and a color filter.
  • a plurality of pixels each including three sub-pixels, and the color filter includes a red, green or blue colored layer for each of the sub-pixels.
  • the backlight is arranged so as to illuminate the liquid crystal display panel with the counter substrate side force
  • the active matrix substrate further includes a plurality of photodiodes in a display region, Photodio
  • the photodiode has a characteristic that the sensitivity increases as the wavelength of incident light is shorter, and the photodiode is arranged so that the photodetection region of the photodiode overlaps the red colored layer in the thickness direction of the liquid crystal display device. It is characterized by being.
  • the photodiode is formed of a silicon film provided on a base substrate of the active matrix substrate, and the silicon film is formed of polycrystalline silicon or continuous grains.
  • the semiconductor region may be provided, and the intrinsic semiconductor region may be the light detection region.
  • the silicon film is covered with a plurality of insulating films, and is electrically connected to the first conductivity type semiconductor region on the plurality of insulating films.
  • Wiring and a second wiring electrically connected to the second conductivity type semiconductor region are provided, and one of the first wiring and the second wiring is the liquid crystal display device.
  • it is preferably formed so as to overlap the intrinsic semiconductor region! In this case, the incidence of illumination light on the photodiode can be further suppressed.
  • FIG. 1 is a plan view partially showing a configuration of a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a cross section obtained by cutting along the cutting line ⁇ - ⁇ in FIG.
  • FIG. 1 mainly shows the structure of the pixels formed on the active matrix substrate.
  • the outer shape of the color filter is indicated by a one-dot chain line.
  • the plan view in FIG. 1 shows the state of the active matrix substrate when observing a side force in which pixels are not formed.
  • the description of the interlayer insulating film is omitted, and in FIG. 2, hatching of the interlayer insulating film is omitted.
  • the liquid crystal display device in the present embodiment includes the liquid crystal display panel 4 shown in FIG. 2 and a backlight (not shown) that illuminates the liquid crystal display panel 4.
  • the liquid crystal surface The display panel 4 includes an active matrix substrate 1, a liquid crystal layer 2, and a counter substrate 3, and is formed by sandwiching the liquid crystal layer 2 between two substrates.
  • the backlight of the liquid crystal display panel 4 is illuminated from the counter substrate 3 side, and the illumination light 30 is transmitted in the order of the counter substrate 3, the liquid crystal layer 2, and the active matrix substrate 1.
  • the liquid crystal display device according to the present embodiment also includes various optical films.
  • the active matrix substrate 1 includes pixels. Although not shown in FIGS. 1 and 2, a plurality of pixels are arranged in a matrix. In the active matrix substrate 1, an area where a plurality of pixels are arranged is a display area. One pixel is composed of three sub-pixels.
  • FIG. 1 illustrates only three sub-pixels 5a to 5c.
  • each of the sub-pixels 5 a to 5 c includes an active element 7 and a transparent electrode 8.
  • the active element 7 is a thin film transistor (TFT).
  • the transparent electrode 8 is a pixel electrode formed of ITO or the like.
  • the active element 7 includes a silicon film 11 in which a source region 15 and a drain region 16 are formed, and a gate electrode 9.
  • the silicon film 11 is formed of continuous grain boundary crystalline silicon (CGS) because of its excellent charge transfer speed.
  • CGS continuous grain boundary crystalline silicon
  • Both the source region 15 and the drain region 16 are n-type semiconductor regions.
  • a region of the silicon film 11 that overlaps the gate electrode 9 is a channel region 17.
  • the gate electrode 9 is formed integrally with the gate line 10 arranged along the horizontal direction of the screen.
  • a source electrode 12 is connected to the source region 15, and a drain electrode 14 is connected to the drain region 16.
  • the source electrode 12 is formed integrally with a source wiring 13 arranged along the vertical direction of the screen.
  • the drain electrode 14 is connected to the transparent electrode 8.
  • the active matrix substrate 1 includes a photodiode 20 in the display area. Although only a single photodiode 20 is shown in FIGS. 1 and 2, in practice, a photodiode 20 is disposed on the active matrix substrate 1 for each pixel. A plurality of photodiodes 20 arranged for each pixel are connected to each other. It functions as a sensor.
  • the photodiode 20 is a PIN diode having a lateral structure.
  • the photodiode 20 includes a silicon film provided on a glass substrate 26 that serves as a base substrate of the active matrix substrate 1.
  • the silicon film constituting the photodiode 20 is formed at the same time using the formation process of the active element 7. For this reason, the photodiode 20 is also formed of continuous grain boundary crystalline silicon (CGS) excellent in charge transfer speed.
  • the silicon film is provided with a p-type semiconductor region (p layer) 21, an intrinsic semiconductor region (transition) 22 and an n-type semiconductor region (n layer) 23 in this order along the plane direction.
  • the i layer 22 is a light detection region.
  • the i layer 22 may be a region that is electrically more neutral than the adjacent p layer 21 and n layer 23.
  • the i layer 22 is preferably a region that does not contain any impurities, or a region where the conduction electron density and hole density are equal to each other.
  • reference numeral 27 denotes an insulating film formed on the glass substrate 26, and the photodiode 20 is formed thereon.
  • the photodiode 20 is covered with interlayer insulating films 28 and 29.
  • 24 indicates the wiring electrically connected to the p-layer 21, and 25 indicates the wiring electrically connected to the n-layer 23.
  • the wiring 24 connected to the p layer 21 is formed so as to overlap the i layer 22 in the thickness direction of the liquid crystal display device.
  • the wiring 24 includes a light shielding portion 24 a at a position overlapping the i layer 22. For this reason, the illumination light 30 is prevented from entering the i layer 23.
  • the counter substrate 3 includes a color filter having a plurality of colored layers.
  • the colored layer is provided for each subpixel.
  • FIG. 1 only the colored layers 6 a to 6 c corresponding to the sub-pixels 5 a to 5 c among the many colored layers are illustrated.
  • the colored layers 6a to 6c overlap the transparent electrodes 8 of the corresponding sub-pixels on the surface of the glass substrate 31 serving as the base substrate of the counter substrate 3 in the thickness direction of the liquid crystal display device. Is formed. Further, a black matrix for light shielding is provided between adjacent colored layers. Tas 32 is provided. A transparent counter electrode 33 is formed so as to cover all the colored layers.
  • the photodiode 20 is arranged in accordance with the sensitivity characteristic of the force photodiode 20 having the same configuration as that of the conventional liquid crystal display device. This is different from the conventional liquid crystal display device. This point will be described with reference to FIG. FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS.
  • the silicon film constituting the photodiode 20 is formed of continuous grain boundary crystalline silicon.
  • the photodiode 20 formed of continuous grain boundary crystalline silicon has a characteristic that the sensitivity increases as the wavelength of incident light is shorter. That is, the photodiode 20 has a characteristic that it is easy to react to blue light having a short wavelength, has a long wavelength, is difficult to react to red light, and has characteristics.
  • the photodiode 20 is disposed so as to overlap the red (R) colored layer 6c in the thickness direction of the semiconductor device. Therefore, only red light out of the light components included in the illumination light is directed toward the photodiode 20.
  • the colored layer 6a is a green (G) colored layer
  • the colored layer 6b is a blue (B) colored layer.
  • illumination light 30 is directed to the i layer 22 from the gap 18 (see FIGS. 1 and 2) between the light shielding portion 24a of the wiring 24 and the wiring 25. Even if light enters, the photodiode 20 hardly reacts. Therefore, according to the present embodiment, in order to shield the illumination light incident through the gap 18, it is not necessary to provide a new light shielding film separately from the light shielding part 24a. Can be suppressed.
  • the light shielding portion 24a for shielding the i layer 22 from the illumination light 30 is the force provided on the wiring 24 connected to the p layer 21. It is not limited to.
  • the light shielding portion may be provided in the wiring 25 connected to the n layer.
  • a dark current may be generated in the photodiode 20 or may be supple.
  • this dark current is The magnitude of the reverse noise voltage applied to the n layer 21 of the photodiode 20 is also related. Therefore, the formation of the light shielding portion in the wiring 24 or the wiring 25 may be performed so that the negative current becomes the smallest depending on the magnitude of the reverse bias voltage.
  • the liquid crystal display device according to the present embodiment may be in any form, provided with the light shielding portion 24a. Even in this embodiment, since the photodiode 20 hardly reacts to the red light, the reaction of the photodiode 20 due to the illumination light 30 is sufficiently suppressed.
  • the formation of the silicon film of continuous grain boundary crystalline silicon can be performed, for example, by the following steps. First, an oxide silicon film and an amorphous silicon film are sequentially formed on the interlayer insulating film 27 shown in FIG. Next, a nickel thin film serving as a catalyst for promoting crystallization is formed on the surface of the amorphous silicon film. Next, the nickel thin film and the amorphous silicon film are reacted by annealing to form a crystalline silicon layer at the interface between them. Thereafter, the unreacted nickel film and the silicon-nickel layer are removed by etching or the like. Next, annealing is performed on the remaining silicon film to advance crystallization, so that a silicon film formed of continuous grain boundary crystalline silicon is obtained. Thereafter, the formation of the photoresist and the etching are performed to make the shape of the silicon film a predetermined shape, and further, various types of ion implantation are performed to complete the photodiode 20.
  • the photodiode 20 is not limited to the one formed by the silicon film of continuous grain boundary crystal silicon.
  • the photodiode 20 only needs to have a characteristic that the sensitivity increases as the wavelength of incident light is shorter. Therefore, the photodiode 20 may be formed of, for example, polycrystalline silicon. This is because polycrystalline silicon has characteristics similar to those of the continuous grain boundary crystalline silicon shown in FIG.
  • Formation of a silicon film from polycrystalline silicon can be performed, for example, as follows.
  • an amorphous silicon silicon film is formed.
  • the amorphous silicon film is dehydrogenated, for example, by heating at 500 ° C. for 2 hours, and annealing is performed to crystallize the amorphous silicon film.
  • a polycrystalline silicon film is obtained.
  • a known laser annealing method for example, a method of irradiating an amorphous silicon film with a laser beam with an excimer laser can be mentioned.
  • the generation of dark current from the photodiode and the photo-diode are provided in the liquid crystal display device including the photodiode that reacts to the light incident from the observer side of the display screen. Reaction due to incidence of illumination light from the diode can be suppressed at the same time. Therefore, the liquid crystal display device according to the present invention can have industrial applicability.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un affichage à cristaux liquides comprenant une photodiode qui ne répond pas à la lumière d'éclairage, tout en supprimant le courant d'obscurité dans la photodiode. L'invention concerne plus précisément un affichage à cristaux liquides comprenant un panneau d'affichage à cristaux liquides (4) et un rétroéclairage. Le panneau d'affichage à cristaux liquides (4) comporte un substrat à matrice active (1), un couche de cristaux liquides (2) et un contre-substrat (3). L'affichage à cristaux liquides comprend une pluralité de pixels se composant respectivement de trois sous-pixels (5a-5c) et un filtre coloré situé sur le contre-substrat (3) comprenant des couches colorées (6a-6c) correspondant respectivement aux sous-pixels. Dans cet affichage à cristaux liquides, le rétroéclairage est disposé de façon à éclairer le panneau d'affichage à cristaux liquides (4) depuis le côté du contre-substrat. Le substrat à matrice active (1) comprend une photodiode (20) située dans une zone d'affichage. Cette photodiode (20) se caractérise par le fait que, plus la longueur d'onde d'une lumière incidente est courte, plus sa sensibilité augmente. Par ailleurs, cette photodiode (20) est conçue de façon que sa zone de détection de la lumière chevauche une couche colorée rouge (6c) dans le sens de l'épaisseur de l'affichage à cristaux liquides.
PCT/JP2007/062307 2006-10-11 2007-06-19 Affichage à cristaux liquides WO2008044370A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006277834 2006-10-11
JP2006-277834 2006-10-11

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009069493A1 (fr) * 2007-11-29 2009-06-04 Sharp Kabushiki Kaisha Dispositif d'affichage d'image
WO2009133716A1 (fr) * 2008-04-28 2009-11-05 シャープ株式会社 Diode et circuit photodétecteur et dispositif d'affichage équipé de la diode
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
WO2012063910A1 (fr) * 2010-11-11 2012-05-18 シャープ株式会社 Dispositif d'affichage à cristaux liquides
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08272529A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 画像入力表示装置
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08272529A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 画像入力表示装置
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子

Cited By (43)

* Cited by examiner, † Cited by third party
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US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
US11073926B2 (en) 2002-02-20 2021-07-27 Apple Inc. Light sensitive display
US9971456B2 (en) 2002-02-20 2018-05-15 Apple Inc. Light sensitive display with switchable detection modes for detecting a fingerprint
US9411470B2 (en) 2002-02-20 2016-08-09 Apple Inc. Light sensitive display with multiple data set object detection
US9134851B2 (en) 2002-02-20 2015-09-15 Apple Inc. Light sensitive display
US8570449B2 (en) 2002-02-20 2013-10-29 Apple Inc. Light sensitive display with pressure sensor
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
US8044930B2 (en) 2002-05-23 2011-10-25 Apple Inc. Light sensitive display
US9354735B2 (en) 2002-05-23 2016-05-31 Apple Inc. Light sensitive display
US7880733B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US7852417B2 (en) 2002-05-23 2010-12-14 Apple Inc. Light sensitive display
US7880819B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US8289429B2 (en) 2004-04-16 2012-10-16 Apple Inc. Image sensor with photosensitive thin film transistors and dark current compensation
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
WO2009069493A1 (fr) * 2007-11-29 2009-06-04 Sharp Kabushiki Kaisha Dispositif d'affichage d'image
EP2214150A1 (fr) * 2007-11-29 2010-08-04 Sharp Kabushiki Kaisha Dispositif d'affichage d'image
US8248395B2 (en) 2007-11-29 2012-08-21 Sharp Kabushiki Kaisha Image display device
EP2214150A4 (fr) * 2007-11-29 2011-02-23 Sharp Kk Dispositif d'affichage d'image
WO2009133716A1 (fr) * 2008-04-28 2009-11-05 シャープ株式会社 Diode et circuit photodétecteur et dispositif d'affichage équipé de la diode
US8294079B2 (en) 2008-04-28 2012-10-23 Sharp Kabushiki Kaisha Diode, photodetector circuit including same, and display device
WO2012063910A1 (fr) * 2010-11-11 2012-05-18 シャープ株式会社 Dispositif d'affichage à cristaux liquides
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9921684B2 (en) 2011-06-22 2018-03-20 Apple Inc. Intelligent stylus
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9519361B2 (en) 2011-06-22 2016-12-13 Apple Inc. Active stylus
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9582105B2 (en) 2012-07-27 2017-02-28 Apple Inc. Input device for touch sensitive devices
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US11687192B2 (en) 2013-07-31 2023-06-27 Apple Inc. Touch controller architecture
US10067580B2 (en) 2013-07-31 2018-09-04 Apple Inc. Active stylus for use with touch controller architecture
US10067618B2 (en) 2014-12-04 2018-09-04 Apple Inc. Coarse scan and targeted active mode scan for touch
US10664113B2 (en) 2014-12-04 2020-05-26 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10061450B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication

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