KR101448899B1 - 커패시터리스 메모리 - Google Patents

커패시터리스 메모리 Download PDF

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Publication number
KR101448899B1
KR101448899B1 KR1020080046562A KR20080046562A KR101448899B1 KR 101448899 B1 KR101448899 B1 KR 101448899B1 KR 1020080046562 A KR1020080046562 A KR 1020080046562A KR 20080046562 A KR20080046562 A KR 20080046562A KR 101448899 B1 KR101448899 B1 KR 101448899B1
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South Korea
Prior art keywords
semiconductor
region
active layer
transistor
source region
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Expired - Fee Related
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KR1020080046562A
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English (en)
Korean (ko)
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KR20080109610A (ko
Inventor
타츠야 혼다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080109610A publication Critical patent/KR20080109610A/ko
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Publication of KR101448899B1 publication Critical patent/KR101448899B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon

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  • Semiconductor Memories (AREA)
KR1020080046562A 2007-06-12 2008-05-20 커패시터리스 메모리 Expired - Fee Related KR101448899B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007154610 2007-06-12
JPJP-P-2007-00154610 2007-06-12

Publications (2)

Publication Number Publication Date
KR20080109610A KR20080109610A (ko) 2008-12-17
KR101448899B1 true KR101448899B1 (ko) 2014-10-13

Family

ID=40131457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080046562A Expired - Fee Related KR101448899B1 (ko) 2007-06-12 2008-05-20 커패시터리스 메모리

Country Status (3)

Country Link
US (1) US7755105B2 (enExample)
JP (1) JP5305739B2 (enExample)
KR (1) KR101448899B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750368B2 (en) * 2008-06-13 2010-07-06 Macronix International Co., Ltd. Memory device
US8278167B2 (en) 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
CN102612741B (zh) * 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
KR20120060407A (ko) * 2010-12-02 2012-06-12 삼성전자주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 터치 표시 장치
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8969924B2 (en) 2012-05-21 2015-03-03 The Board Of Trustees Of The Leland Stanford Junior University Transistor-based apparatuses, systems and methods
CN121040234A (zh) * 2024-03-28 2025-11-28 京东方科技集团股份有限公司 晶体管、驱动背板及制备方法和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ
JPH11204661A (ja) * 1997-10-29 1999-07-30 Sony Corp 半導体メモリセル及びその製造方法
JP2003523615A (ja) * 1999-02-24 2003-08-05 カンタム・セミコンダクター、エル・エル・シー Ｍｉｓｆｅｔ
JP2006505948A (ja) * 2002-11-08 2006-02-16 フリースケール セミコンダクター インコーポレイテッド ワン・トランジスタｄｒａｍセル構造および製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4755865A (en) * 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
US4899202A (en) * 1988-07-08 1990-02-06 Texas Instruments Incorporated High performance silicon-on-insulator transistor with body node to source node connection
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JP3407232B2 (ja) 1995-02-08 2003-05-19 富士通株式会社 半導体記憶装置及びその動作方法
US5914504A (en) * 1995-06-16 1999-06-22 Imec Vzw DRAM applications using vertical MISFET devices
JPH1092952A (ja) 1996-09-18 1998-04-10 Toshiba Corp 半導体記憶装置
JP4216483B2 (ja) 2001-02-15 2009-01-28 株式会社東芝 半導体メモリ装置
EP2413366B1 (en) * 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7518196B2 (en) * 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ
JPH11204661A (ja) * 1997-10-29 1999-07-30 Sony Corp 半導体メモリセル及びその製造方法
JP2003523615A (ja) * 1999-02-24 2003-08-05 カンタム・セミコンダクター、エル・エル・シー Ｍｉｓｆｅｔ
JP2006505948A (ja) * 2002-11-08 2006-02-16 フリースケール セミコンダクター インコーポレイテッド ワン・トランジスタｄｒａｍセル構造および製造方法

Also Published As

Publication number Publication date
JP2009021561A (ja) 2009-01-29
US7755105B2 (en) 2010-07-13
JP5305739B2 (ja) 2013-10-02
US20080308802A1 (en) 2008-12-18
KR20080109610A (ko) 2008-12-17

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