JP5483660B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5483660B2
JP5483660B2 JP2007136314A JP2007136314A JP5483660B2 JP 5483660 B2 JP5483660 B2 JP 5483660B2 JP 2007136314 A JP2007136314 A JP 2007136314A JP 2007136314 A JP2007136314 A JP 2007136314A JP 5483660 B2 JP5483660 B2 JP 5483660B2
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JP
Japan
Prior art keywords
layer
insulating layer
semiconductor
layers
region
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Expired - Fee Related
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JP2007136314A
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English (en)
Japanese (ja)
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JP2008010842A5 (enExample
JP2008010842A (ja
Inventor
圭恵 高野
篤史 徳田
亮太 田島
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007136314A priority Critical patent/JP5483660B2/ja
Publication of JP2008010842A publication Critical patent/JP2008010842A/ja
Publication of JP2008010842A5 publication Critical patent/JP2008010842A5/ja
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Publication of JP5483660B2 publication Critical patent/JP5483660B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007136314A 2006-06-01 2007-05-23 半導体装置 Expired - Fee Related JP5483660B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007136314A JP5483660B2 (ja) 2006-06-01 2007-05-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006153516 2006-06-01
JP2006153516 2006-06-01
JP2007136314A JP5483660B2 (ja) 2006-06-01 2007-05-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2008010842A JP2008010842A (ja) 2008-01-17
JP2008010842A5 JP2008010842A5 (enExample) 2010-05-27
JP5483660B2 true JP5483660B2 (ja) 2014-05-07

Family

ID=39068720

Family Applications (1)

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JP2007136314A Expired - Fee Related JP5483660B2 (ja) 2006-06-01 2007-05-23 半導体装置

Country Status (1)

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JP (1) JP5483660B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009027134A (ja) * 2007-06-21 2009-02-05 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置
JP5224832B2 (ja) 2008-01-21 2013-07-03 任天堂株式会社 情報処理プログラムおよび情報処理装置
JP2009231373A (ja) * 2008-03-19 2009-10-08 Toshiba Corp 不揮発性半導体記憶装置
JP2011124240A (ja) * 2008-03-31 2011-06-23 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体
KR100955680B1 (ko) * 2008-04-07 2010-05-06 주식회사 하이닉스반도체 불휘발성 메모리소자의 제조방법
KR101508492B1 (ko) * 2008-05-09 2015-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비휘발성 반도체 기억 장치
US8188535B2 (en) * 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010098054A (ja) * 2008-10-15 2010-04-30 Sharp Corp メモリ素子、半導体記憶装置、表示装置、および携帯電子機器
JP7114308B2 (ja) 2018-04-12 2022-08-08 キオクシア株式会社 半導体記憶装置
CN116110956B (zh) * 2023-04-12 2023-07-04 合肥晶合集成电路股份有限公司 一种存储器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03153085A (ja) * 1989-11-10 1991-07-01 Fujitsu Ltd 半導体記憶装置及びその製造方法
JPH03242978A (ja) * 1990-02-21 1991-10-29 Kawasaki Steel Corp 半導体記憶装置及びその製造方法
JP4151229B2 (ja) * 2000-10-26 2008-09-17 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP3594550B2 (ja) * 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자

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Publication number Publication date
JP2008010842A (ja) 2008-01-17

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