JP2014509454A5 - - Google Patents

Download PDF

Info

Publication number
JP2014509454A5
JP2014509454A5 JP2013555567A JP2013555567A JP2014509454A5 JP 2014509454 A5 JP2014509454 A5 JP 2014509454A5 JP 2013555567 A JP2013555567 A JP 2013555567A JP 2013555567 A JP2013555567 A JP 2013555567A JP 2014509454 A5 JP2014509454 A5 JP 2014509454A5
Authority
JP
Japan
Prior art keywords
charge storage
silicon film
dielectric
storage structure
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013555567A
Other languages
English (en)
Japanese (ja)
Other versions
JP5877210B2 (ja
JP2014509454A (ja
Filing date
Publication date
Priority claimed from US13/035,700 external-priority patent/US8759895B2/en
Application filed filed Critical
Publication of JP2014509454A publication Critical patent/JP2014509454A/ja
Publication of JP2014509454A5 publication Critical patent/JP2014509454A5/ja
Application granted granted Critical
Publication of JP5877210B2 publication Critical patent/JP5877210B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013555567A 2011-02-25 2012-02-23 電荷蓄積装置、システム、および方法 Active JP5877210B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/035,700 2011-02-25
US13/035,700 US8759895B2 (en) 2011-02-25 2011-02-25 Semiconductor charge storage apparatus and methods
PCT/US2012/026358 WO2012116207A2 (en) 2011-02-25 2012-02-23 Charge storage apparatus, systems and methods

Publications (3)

Publication Number Publication Date
JP2014509454A JP2014509454A (ja) 2014-04-17
JP2014509454A5 true JP2014509454A5 (enExample) 2015-04-09
JP5877210B2 JP5877210B2 (ja) 2016-03-02

Family

ID=46718390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013555567A Active JP5877210B2 (ja) 2011-02-25 2012-02-23 電荷蓄積装置、システム、および方法

Country Status (7)

Country Link
US (7) US8759895B2 (enExample)
EP (1) EP2678882B1 (enExample)
JP (1) JP5877210B2 (enExample)
KR (1) KR101571944B1 (enExample)
CN (1) CN103403861B (enExample)
TW (1) TWI515802B (enExample)
WO (1) WO2012116207A2 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803214B2 (en) 2010-06-28 2014-08-12 Micron Technology, Inc. Three dimensional memory and methods of forming the same
US9397093B2 (en) 2013-02-08 2016-07-19 Sandisk Technologies Inc. Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
US8759895B2 (en) 2011-02-25 2014-06-24 Micron Technology, Inc. Semiconductor charge storage apparatus and methods
KR101794017B1 (ko) * 2011-05-12 2017-11-06 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조 방법
US9178077B2 (en) 2012-11-13 2015-11-03 Micron Technology, Inc. Semiconductor constructions
US8778762B2 (en) 2012-12-07 2014-07-15 Micron Technology, Inc. Methods of forming vertically-stacked structures, and methods of forming vertically-stacked memory cells
US9105737B2 (en) 2013-01-07 2015-08-11 Micron Technology, Inc. Semiconductor constructions
US8853769B2 (en) 2013-01-10 2014-10-07 Micron Technology, Inc. Transistors and semiconductor constructions
US8946807B2 (en) 2013-01-24 2015-02-03 Micron Technology, Inc. 3D memory
US9064970B2 (en) 2013-03-15 2015-06-23 Micron Technology, Inc. Memory including blocking dielectric in etch stop tier
US9184175B2 (en) 2013-03-15 2015-11-10 Micron Technology, Inc. Floating gate memory cells in vertical memory
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US9159845B2 (en) 2013-05-15 2015-10-13 Micron Technology, Inc. Charge-retaining transistor, array of memory cells, and methods of forming a charge-retaining transistor
US9728584B2 (en) 2013-06-11 2017-08-08 Micron Technology, Inc. Three dimensional memory array with select device
US9275909B2 (en) 2013-08-12 2016-03-01 Micron Technology, Inc. Methods of fabricating semiconductor structures
US9437604B2 (en) 2013-11-01 2016-09-06 Micron Technology, Inc. Methods and apparatuses having strings of memory cells including a metal source
US9136278B2 (en) 2013-11-18 2015-09-15 Micron Technology, Inc. Methods of forming vertically-stacked memory cells
US10141322B2 (en) * 2013-12-17 2018-11-27 Intel Corporation Metal floating gate composite 3D NAND memory devices and associated methods
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US20150194321A1 (en) * 2014-01-09 2015-07-09 Micron Technology, Inc. Methods of Processing Polysilicon-Comprising Compositions
US9171862B2 (en) * 2014-01-24 2015-10-27 Macronix International Co., Ltd. Three-dimensional memory and method of forming the same
CN104810326B (zh) * 2014-01-28 2017-09-08 旺宏电子股份有限公司 三维存储器及其制造方法
CN103904034A (zh) * 2014-03-05 2014-07-02 清华大学 P-BiCS结构及其形成方法
CN103904035B (zh) * 2014-03-05 2016-09-21 清华大学 Tcat结构及其形成方法
US9917096B2 (en) * 2014-09-10 2018-03-13 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
CN104269406B (zh) * 2014-09-16 2017-04-19 华中科技大学 一种芯壳型纳米线三维nand闪存器件及其制备方法
US9741569B2 (en) * 2014-12-16 2017-08-22 Macronix International Co., Ltd. Forming memory using doped oxide
CN107548520B (zh) * 2015-02-24 2021-05-25 东芝存储器株式会社 半导体存储装置及其制造方法
CN107534046B (zh) * 2015-03-02 2020-09-08 东芝存储器株式会社 半导体存储装置及其制造方法
US11011531B2 (en) 2015-03-17 2021-05-18 Micron Technology, Inc. Replacement control gate methods and apparatuses
US9608000B2 (en) 2015-05-27 2017-03-28 Micron Technology, Inc. Devices and methods including an etch stop protection material
WO2016194211A1 (ja) * 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
US9806089B2 (en) 2015-09-21 2017-10-31 Sandisk Technologies Llc Method of making self-assembling floating gate electrodes for a three-dimensional memory device
JP2017163044A (ja) * 2016-03-10 2017-09-14 東芝メモリ株式会社 半導体装置およびその製造方法
KR102456494B1 (ko) * 2016-03-29 2022-10-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
KR102626838B1 (ko) 2016-06-20 2024-01-18 삼성전자주식회사 수직형 비휘발성 메모리 소자 및 그 제조방법
US9673216B1 (en) * 2016-07-18 2017-06-06 Sandisk Technologies Llc Method of forming memory cell film
KR102673120B1 (ko) * 2016-12-05 2024-06-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10707121B2 (en) * 2016-12-31 2020-07-07 Intel Corporatino Solid state memory device, and manufacturing method thereof
US10217755B2 (en) * 2017-04-01 2019-02-26 Intel Corporation Flash memory cells, components, and methods
US10141221B1 (en) * 2017-07-18 2018-11-27 Macronix International Co., Ltd. Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same
US11282845B2 (en) 2017-08-24 2022-03-22 Micron Technology, Inc. Semiconductor devices comprising carbon-doped silicon nitride and related methods
US10777566B2 (en) * 2017-11-10 2020-09-15 Macronix International Co., Ltd. 3D array arranged for memory and in-memory sum-of-products operations
US10355014B1 (en) * 2017-12-22 2019-07-16 Micron Technology, Inc. Assemblies having vertically-extending structures
US10719296B2 (en) 2018-01-17 2020-07-21 Macronix International Co., Ltd. Sum-of-products accelerator array
US10957392B2 (en) 2018-01-17 2021-03-23 Macronix International Co., Ltd. 2D and 3D sum-of-products array for neuromorphic computing system
US11138497B2 (en) 2018-07-17 2021-10-05 Macronix International Co., Ltd In-memory computing devices for neural networks
WO2020076652A1 (en) 2018-10-09 2020-04-16 Micron Technology, Inc. Semiconductor devices comprising transistors having increased threshold voltage and related methods and systems
US11636325B2 (en) 2018-10-24 2023-04-25 Macronix International Co., Ltd. In-memory data pooling for machine learning
US11562229B2 (en) 2018-11-30 2023-01-24 Macronix International Co., Ltd. Convolution accelerator using in-memory computation
US11934480B2 (en) 2018-12-18 2024-03-19 Macronix International Co., Ltd. NAND block architecture for in-memory multiply-and-accumulate operations
CN113728433B (zh) * 2018-12-26 2025-01-07 美光科技公司 具有用于2晶体管竖直存储器单元的共享读取/写入数据线的存储器装置
US11119674B2 (en) 2019-02-19 2021-09-14 Macronix International Co., Ltd. Memory devices and methods for operating the same
US10783963B1 (en) 2019-03-08 2020-09-22 Macronix International Co., Ltd. In-memory computation device with inter-page and intra-page data circuits
US11132176B2 (en) 2019-03-20 2021-09-28 Macronix International Co., Ltd. Non-volatile computing method in flash memory
US10777576B1 (en) * 2019-04-03 2020-09-15 Micron Technology, Inc. Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
US10910393B2 (en) 2019-04-25 2021-02-02 Macronix International Co., Ltd. 3D NOR memory having vertical source and drain structures
US11244954B2 (en) 2019-08-22 2022-02-08 Micron Technology, Inc. Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
CN111063683B (zh) * 2019-12-06 2022-08-30 中国科学院微电子研究所 具有u形沟道的半导体装置及包括其的电子设备
US11056505B2 (en) 2019-12-10 2021-07-06 Micron Technology, Inc. Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies
US11621273B2 (en) 2020-05-13 2023-04-04 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
US12058860B2 (en) * 2020-06-15 2024-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device
US11935956B2 (en) * 2020-06-26 2024-03-19 Intel Corporation TMD inverted nanowire integration
US11309315B2 (en) * 2020-07-30 2022-04-19 Micron Technology, Inc. Digit line formation for horizontally oriented access devices
US11417683B2 (en) 2020-10-22 2022-08-16 Macronix International Co., Ltd. Flash memory and method of fabricating the same
TWI745132B (zh) * 2020-10-22 2021-11-01 旺宏電子股份有限公司 快閃記憶體
US11737274B2 (en) 2021-02-08 2023-08-22 Macronix International Co., Ltd. Curved channel 3D memory device
CN112885837A (zh) * 2021-03-22 2021-06-01 长江存储科技有限责任公司 三维存储器和制备三维存储器的方法
US11916011B2 (en) 2021-04-14 2024-02-27 Macronix International Co., Ltd. 3D virtual ground memory and manufacturing methods for same
US11710519B2 (en) 2021-07-06 2023-07-25 Macronix International Co., Ltd. High density memory with reference memory using grouped cells and corresponding operations
US12299597B2 (en) 2021-08-27 2025-05-13 Macronix International Co., Ltd. Reconfigurable AI system
US12424282B2 (en) 2022-05-24 2025-09-23 Micron Technology, Inc. Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
WO2024039982A2 (en) * 2022-08-17 2024-02-22 NEO Semiconductor, Inc. 3d memory cells and array architectures
US12321603B2 (en) 2023-02-22 2025-06-03 Macronix International Co., Ltd. High bandwidth non-volatile memory for AI inference system
US12417170B2 (en) 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3651689B2 (ja) 1993-05-28 2005-05-25 株式会社東芝 Ｎａｎｄ型不揮発性半導体記憶装置及びその製造方法
US5352619A (en) * 1993-07-22 1994-10-04 United Microelectronics Corporation Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices
DE69530292T2 (de) 1994-04-13 2003-12-04 Ericsson Inc., Research Triangle Park Effiziente adressierung von grossen speichern
JP2002176114A (ja) 2000-09-26 2002-06-21 Toshiba Corp 半導体装置及びその製造方法
US6933556B2 (en) 2001-06-22 2005-08-23 Fujio Masuoka Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer
US6753224B1 (en) * 2002-12-19 2004-06-22 Taiwan Semiconductor Manufacturing Company Layer of high-k inter-poly dielectric
JP2005038909A (ja) * 2003-07-15 2005-02-10 Fujio Masuoka 不揮発性メモリ素子の駆動方法、半導体記憶装置及びそれを備えてなる液晶表示装置
US7788451B2 (en) 2004-02-05 2010-08-31 Micron Technology, Inc. Apparatus and method for data bypass for a bi-directional data bus in a hub-based memory sub-system
US20050283743A1 (en) 2004-06-07 2005-12-22 Mulholland Philip J Method for generating hardware information
US20060277355A1 (en) 2005-06-01 2006-12-07 Mark Ellsberry Capacity-expanding memory device
JP4909894B2 (ja) * 2005-06-10 2012-04-04 シャープ株式会社 不揮発性半導体記憶装置およびその製造方法
US7636881B2 (en) 2005-06-30 2009-12-22 International Business Machines Corporation Displaying a portal with render-when-ready portlets
US7462550B2 (en) 2005-10-24 2008-12-09 Semiconductor Components Industries, L.L.C. Method of forming a trench semiconductor device and structure therefor
US7409491B2 (en) 2005-12-14 2008-08-05 Sun Microsystems, Inc. System memory board subsystem using DRAM with stacked dedicated high speed point to point links
KR100707217B1 (ko) 2006-05-26 2007-04-13 삼성전자주식회사 리세스-타입 제어 게이트 전극을 구비하는 반도체 메모리소자 및 그 제조 방법
JP2008034456A (ja) * 2006-07-26 2008-02-14 Toshiba Corp 不揮発性半導体記憶装置
US7642160B2 (en) 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
JP2008160004A (ja) 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
JP5118347B2 (ja) 2007-01-05 2013-01-16 株式会社東芝 半導体装置
JP4939955B2 (ja) 2007-01-26 2012-05-30 株式会社東芝 不揮発性半導体記憶装置
KR100866966B1 (ko) 2007-05-10 2008-11-06 삼성전자주식회사 비휘발성 메모리 소자, 그 제조 방법 및 반도체 패키지
SG148901A1 (en) 2007-07-09 2009-01-29 Micron Technology Inc Packaged semiconductor assemblies and methods for manufacturing such assemblies
KR20090037690A (ko) 2007-10-12 2009-04-16 삼성전자주식회사 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
JP4957500B2 (ja) 2007-10-12 2012-06-20 日本電気株式会社 文字列照合回路
KR101226685B1 (ko) * 2007-11-08 2013-01-25 삼성전자주식회사 수직형 반도체 소자 및 그 제조 방법.
EP2225774A4 (en) 2007-12-27 2013-04-24 Toshiba Kk SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
JP2009158775A (ja) * 2007-12-27 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5086851B2 (ja) 2008-03-14 2012-11-28 株式会社東芝 不揮発性半導体記憶装置
JP5283960B2 (ja) 2008-04-23 2013-09-04 株式会社東芝 三次元積層不揮発性半導体メモリ
JP5072696B2 (ja) 2008-04-23 2012-11-14 株式会社東芝 三次元積層不揮発性半導体メモリ
JP2009277770A (ja) 2008-05-13 2009-11-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP5230274B2 (ja) 2008-06-02 2013-07-10 株式会社東芝 不揮発性半導体記憶装置
US7732891B2 (en) 2008-06-03 2010-06-08 Kabushiki Kaisha Toshiba Semiconductor device
KR20100001260A (ko) 2008-06-26 2010-01-06 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR101052921B1 (ko) * 2008-07-07 2011-07-29 주식회사 하이닉스반도체 버티컬 플로팅 게이트를 구비하는 플래시 메모리소자의제조방법
JP5321589B2 (ja) 2008-08-13 2013-10-23 日本電気株式会社 有限オートマトン生成装置、パターンマッチング装置、有限オートマトン回路生成方法およびプログラム
KR101498676B1 (ko) 2008-09-30 2015-03-09 삼성전자주식회사 3차원 반도체 장치
JP5193796B2 (ja) 2008-10-21 2013-05-08 株式会社東芝 ３次元積層型不揮発性半導体メモリ
KR101495803B1 (ko) 2008-11-12 2015-02-26 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법 및 이에 따라 제조된 비휘발성 메모리 장치
US8148763B2 (en) 2008-11-25 2012-04-03 Samsung Electronics Co., Ltd. Three-dimensional semiconductor devices
JP5317664B2 (ja) * 2008-12-17 2013-10-16 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR101495806B1 (ko) 2008-12-24 2015-02-26 삼성전자주식회사 비휘발성 기억 소자
JP5388600B2 (ja) * 2009-01-22 2014-01-15 株式会社東芝 不揮発性半導体記憶装置の製造方法
US7878507B1 (en) 2009-02-09 2011-02-01 John Joseph Dimond Spatial game apparatus
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
JP4897009B2 (ja) * 2009-03-24 2012-03-14 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP2011009409A (ja) 2009-06-25 2011-01-13 Toshiba Corp 不揮発性半導体記憶装置
JP2011035228A (ja) * 2009-08-04 2011-02-17 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8508997B2 (en) 2009-12-23 2013-08-13 Intel Corporation Multi-cell vertical memory nodes
US8803214B2 (en) 2010-06-28 2014-08-12 Micron Technology, Inc. Three dimensional memory and methods of forming the same
US8193054B2 (en) * 2010-06-30 2012-06-05 SanDisk Technologies, Inc. Ultrahigh density vertical NAND memory device and method of making thereof
US8237213B2 (en) 2010-07-15 2012-08-07 Micron Technology, Inc. Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
US8759895B2 (en) 2011-02-25 2014-06-24 Micron Technology, Inc. Semiconductor charge storage apparatus and methods
KR20130046700A (ko) 2011-10-28 2013-05-08 삼성전자주식회사 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치
US9269766B2 (en) 2013-09-20 2016-02-23 Globalfoundries Singapore Pte. Ltd. Guard ring for memory array
US10902921B2 (en) 2018-12-21 2021-01-26 Texas Instruments Incorporated Flash memory bitcell erase with source bias voltage

Similar Documents

Publication Publication Date Title
JP2014509454A5 (enExample)
JP2012199528A5 (enExample)
JP2015111706A5 (ja) 表示装置および電子機器
US8766351B2 (en) Semiconductor storage device and manufacturing method of semiconductor storage device
JP6137581B2 (ja) オン電流およびセルピラー製造を制御する、縦型ｎａｎｄストリングのためのタングステンサリサイドゲートソース
JP2014197211A5 (enExample)
JP2015181158A5 (ja) 半導体装置
JP2013145875A5 (enExample)
JP2013149970A5 (enExample)
JP2011192976A5 (enExample)
JP2012256875A5 (ja) 半導体装置
GB2526463A (en) Leakage reduction structures for nanowire transistors
JP2015156515A5 (ja) 半導体装置の作製方法
JP2009033118A5 (enExample)
WO2014008160A3 (en) Sonos ono stack scaling
JP2014225652A5 (enExample)
JP2011151377A5 (enExample)
JP2014116582A5 (enExample)
JP2011216879A5 (enExample)
JP2011054949A5 (ja) 半導体装置
JP2013047808A5 (ja) 表示装置
JP2012160717A5 (ja) トランジスタ
JP2013239713A5 (enExample)
JP2012015502A5 (enExample)
JP2011119711A5 (enExample)