JP2006302950A5 - - Google Patents

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Publication number
JP2006302950A5
JP2006302950A5 JP2005118505A JP2005118505A JP2006302950A5 JP 2006302950 A5 JP2006302950 A5 JP 2006302950A5 JP 2005118505 A JP2005118505 A JP 2005118505A JP 2005118505 A JP2005118505 A JP 2005118505A JP 2006302950 A5 JP2006302950 A5 JP 2006302950A5
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JP
Japan
Prior art keywords
insulating film
gates
floating
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005118505A
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English (en)
Japanese (ja)
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JP2006302950A (ja
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Publication date
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Priority to JP2005118505A priority Critical patent/JP2006302950A/ja
Priority claimed from JP2005118505A external-priority patent/JP2006302950A/ja
Priority to US11/402,972 priority patent/US7705392B2/en
Publication of JP2006302950A publication Critical patent/JP2006302950A/ja
Publication of JP2006302950A5 publication Critical patent/JP2006302950A5/ja
Priority to US12/613,057 priority patent/US20100044772A1/en
Priority to US12/727,890 priority patent/US8211777B2/en
Priority to US13/488,015 priority patent/US8669172B2/en
Pending legal-status Critical Current

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JP2005118505A 2005-04-15 2005-04-15 不揮発性半導体装置および不揮発性半導体装置の製造方法 Pending JP2006302950A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005118505A JP2006302950A (ja) 2005-04-15 2005-04-15 不揮発性半導体装置および不揮発性半導体装置の製造方法
US11/402,972 US7705392B2 (en) 2005-04-15 2006-04-13 Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device
US12/613,057 US20100044772A1 (en) 2005-04-15 2009-11-05 Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device
US12/727,890 US8211777B2 (en) 2005-04-15 2010-03-19 Method of manufacturing nonvolatile semiconductor device
US13/488,015 US8669172B2 (en) 2005-04-15 2012-06-04 Method of manufacturing nonvolatile semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005118505A JP2006302950A (ja) 2005-04-15 2005-04-15 不揮発性半導体装置および不揮発性半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012005997A Division JP5526162B2 (ja) 2012-01-16 2012-01-16 不揮発性半導体装置および不揮発性半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006302950A JP2006302950A (ja) 2006-11-02
JP2006302950A5 true JP2006302950A5 (enExample) 2008-05-22

Family

ID=37107687

Family Applications (1)

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JP2005118505A Pending JP2006302950A (ja) 2005-04-15 2005-04-15 不揮発性半導体装置および不揮発性半導体装置の製造方法

Country Status (2)

Country Link
US (4) US7705392B2 (enExample)
JP (1) JP2006302950A (enExample)

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JP5570953B2 (ja) 2010-11-18 2014-08-13 株式会社東芝 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
SG10201408390TA (en) * 2010-11-18 2015-01-29 Toshiba Kk Nonvolatile semiconductor memory device and manufacturing method of nonvolatile semiconductor memory device
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CN111682026A (zh) * 2015-02-15 2020-09-18 华邦电子股份有限公司 半导体元件的制造方法
CN107293545B (zh) * 2016-03-30 2020-04-07 中芯国际集成电路制造(上海)有限公司 半导体存储器件及其制造方法
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US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10680006B2 (en) 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10665499B2 (en) * 2018-06-28 2020-05-26 Intel Corporation Integrated circuit with airgaps to control capacitance
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CN113035713B (zh) * 2019-12-24 2023-12-01 华邦电子股份有限公司 存储器结构及其制造方法
TWI797467B (zh) * 2020-08-03 2023-04-01 華邦電子股份有限公司 非揮發性記憶體結構及其製造方法
CN114256252B (zh) * 2020-09-22 2024-10-29 华邦电子股份有限公司 非易失性存储器结构及其制造方法
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