JP2005524994A5 - - Google Patents
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- Publication number
- JP2005524994A5 JP2005524994A5 JP2004504303A JP2004504303A JP2005524994A5 JP 2005524994 A5 JP2005524994 A5 JP 2005524994A5 JP 2004504303 A JP2004504303 A JP 2004504303A JP 2004504303 A JP2004504303 A JP 2004504303A JP 2005524994 A5 JP2005524994 A5 JP 2005524994A5
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- control gate
- semiconductor memory
- stack
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000006850 spacer group Chemical group 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02076771 | 2002-05-08 | ||
| PCT/IB2003/001485 WO2003096431A1 (en) | 2002-05-08 | 2003-04-11 | Floating gate memory cells with increased coupling ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005524994A JP2005524994A (ja) | 2005-08-18 |
| JP2005524994A5 true JP2005524994A5 (enExample) | 2006-06-01 |
Family
ID=29414749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004504303A Pending JP2005524994A (ja) | 2002-05-08 | 2003-04-11 | 高結合比浮遊ゲートメモリセル |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7045852B2 (enExample) |
| EP (1) | EP1506580B1 (enExample) |
| JP (1) | JP2005524994A (enExample) |
| CN (1) | CN100533772C (enExample) |
| AT (1) | ATE475200T1 (enExample) |
| AU (1) | AU2003216649A1 (enExample) |
| DE (1) | DE60333452D1 (enExample) |
| TW (1) | TWI306312B (enExample) |
| WO (1) | WO2003096431A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221008B2 (en) * | 2003-10-06 | 2007-05-22 | Sandisk Corporation | Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory |
| KR100650369B1 (ko) * | 2004-10-01 | 2006-11-27 | 주식회사 하이닉스반도체 | 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법 |
| US7381615B2 (en) * | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
| US7416956B2 (en) * | 2004-11-23 | 2008-08-26 | Sandisk Corporation | Self-aligned trench filling for narrow gap isolation regions |
| US7319618B2 (en) * | 2005-08-16 | 2008-01-15 | Macronic International Co., Ltd. | Low-k spacer structure for flash memory |
| US7541241B2 (en) * | 2005-12-12 | 2009-06-02 | Promos Technologies, Inc. | Method for fabricating memory cell |
| JP4364225B2 (ja) * | 2006-09-15 | 2009-11-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US8325530B2 (en) * | 2006-10-03 | 2012-12-04 | Macronix International Co., Ltd. | Cell operation methods using gate-injection for floating gate NAND flash memory |
| US20080160680A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Methods of fabricating shield plates for reduced field coupling in nonvolatile memory |
| US20080157169A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Shield plates for reduced field coupling in nonvolatile memory |
| TW200847404A (en) * | 2007-05-18 | 2008-12-01 | Nanya Technology Corp | Flash memory device and method for fabricating thereof |
| US8138077B2 (en) * | 2008-05-13 | 2012-03-20 | Hynix Semiconductor Inc. | Flash memory device and method of fabricating the same |
| CN101866691B (zh) * | 2010-04-29 | 2015-06-17 | 上海华虹宏力半导体制造有限公司 | 获得快闪存储单元电容耦合率的方法 |
| CN102867748B (zh) * | 2011-07-06 | 2015-09-23 | 中国科学院微电子研究所 | 一种晶体管及其制作方法和包括该晶体管的半导体芯片 |
| US8664059B2 (en) | 2012-04-26 | 2014-03-04 | International Business Machines Corporation | Non-volatile memory device formed by dual floating gate deposit |
| US20130285134A1 (en) | 2012-04-26 | 2013-10-31 | International Business Machines Corporation | Non-volatile memory device formed with etch stop layer in shallow trench isolation region |
| US20140015031A1 (en) * | 2012-07-12 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
| CN103715076B (zh) * | 2013-12-27 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 提高分栅式闪存中控制栅极对浮栅的耦合系数的方法 |
| US10003014B2 (en) * | 2014-06-20 | 2018-06-19 | International Business Machines Corporation | Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching |
| CN106992143B (zh) * | 2016-01-21 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件以及制备方法、电子装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
| US5445984A (en) * | 1994-11-28 | 1995-08-29 | United Microelectronics Corporation | Method of making a split gate flash memory cell |
| US5576232A (en) * | 1994-12-12 | 1996-11-19 | United Microelectronics Corp. | Fabrication process for flash memory in which channel lengths are controlled |
| US5650345A (en) * | 1995-06-07 | 1997-07-22 | International Business Machines Corporation | Method of making self-aligned stacked gate EEPROM with improved coupling ratio |
| KR100278647B1 (ko) * | 1996-10-05 | 2001-02-01 | 윤종용 | 불휘발성 메모리소자 및 그 제조방법 |
| US6069382A (en) * | 1998-02-11 | 2000-05-30 | Cypress Semiconductor Corp. | Non-volatile memory cell having a high coupling ratio |
-
2003
- 2003-04-11 EP EP03712560A patent/EP1506580B1/en not_active Expired - Lifetime
- 2003-04-11 AU AU2003216649A patent/AU2003216649A1/en not_active Abandoned
- 2003-04-11 CN CNB038103206A patent/CN100533772C/zh not_active Expired - Fee Related
- 2003-04-11 WO PCT/IB2003/001485 patent/WO2003096431A1/en not_active Ceased
- 2003-04-11 AT AT03712560T patent/ATE475200T1/de not_active IP Right Cessation
- 2003-04-11 DE DE60333452T patent/DE60333452D1/de not_active Expired - Lifetime
- 2003-04-11 US US10/513,874 patent/US7045852B2/en not_active Expired - Lifetime
- 2003-04-11 JP JP2004504303A patent/JP2005524994A/ja active Pending
- 2003-05-05 TW TW092112230A patent/TWI306312B/zh not_active IP Right Cessation
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