JP2006344900A5 - - Google Patents

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Publication number
JP2006344900A5
JP2006344900A5 JP2005171306A JP2005171306A JP2006344900A5 JP 2006344900 A5 JP2006344900 A5 JP 2006344900A5 JP 2005171306 A JP2005171306 A JP 2005171306A JP 2005171306 A JP2005171306 A JP 2005171306A JP 2006344900 A5 JP2006344900 A5 JP 2006344900A5
Authority
JP
Japan
Prior art keywords
insulating film
gate electrode
gate insulating
semiconductor substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005171306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006344900A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005171306A priority Critical patent/JP2006344900A/ja
Priority claimed from JP2005171306A external-priority patent/JP2006344900A/ja
Priority to KR1020060051817A priority patent/KR100759622B1/ko
Priority to US11/449,827 priority patent/US7863668B2/en
Publication of JP2006344900A publication Critical patent/JP2006344900A/ja
Publication of JP2006344900A5 publication Critical patent/JP2006344900A5/ja
Priority to US12/926,676 priority patent/US7998811B2/en
Pending legal-status Critical Current

Links

JP2005171306A 2005-06-10 2005-06-10 半導体装置 Pending JP2006344900A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005171306A JP2006344900A (ja) 2005-06-10 2005-06-10 半導体装置
KR1020060051817A KR100759622B1 (ko) 2005-06-10 2006-06-09 반도체 장치
US11/449,827 US7863668B2 (en) 2005-06-10 2006-06-09 Nonvolatile semiconductor memory device with memory cell array region and dummy cell region
US12/926,676 US7998811B2 (en) 2005-06-10 2010-12-03 Semiconductor device and method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005171306A JP2006344900A (ja) 2005-06-10 2005-06-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2006344900A JP2006344900A (ja) 2006-12-21
JP2006344900A5 true JP2006344900A5 (enExample) 2007-11-15

Family

ID=37523385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005171306A Pending JP2006344900A (ja) 2005-06-10 2005-06-10 半導体装置

Country Status (3)

Country Link
US (2) US7863668B2 (enExample)
JP (1) JP2006344900A (enExample)
KR (1) KR100759622B1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4764284B2 (ja) * 2006-08-11 2011-08-31 株式会社東芝 半導体装置およびその製造方法
JP5076570B2 (ja) * 2007-03-16 2012-11-21 富士通セミコンダクター株式会社 半導体装置とその製造方法
US20080315326A1 (en) * 2007-06-21 2008-12-25 Werner Graf Method for forming an integrated circuit having an active semiconductor device and integrated circuit
JP5151303B2 (ja) * 2007-08-07 2013-02-27 ソニー株式会社 半導体装置の製造方法
JP2009054956A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 半導体メモリ
JP4560100B2 (ja) * 2008-03-24 2010-10-13 株式会社東芝 半導体装置
JP5548350B2 (ja) * 2008-09-30 2014-07-16 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5306036B2 (ja) * 2009-04-21 2013-10-02 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP2011165975A (ja) * 2010-02-10 2011-08-25 Toshiba Corp 不揮発性半導体記憶装置
JP2010153899A (ja) * 2010-02-22 2010-07-08 Toshiba Corp 半導体メモリ
JP2011204756A (ja) 2010-03-24 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP5523912B2 (ja) 2010-04-19 2014-06-18 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
KR101660243B1 (ko) * 2010-06-14 2016-09-27 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조방법
JP2012199313A (ja) * 2011-03-18 2012-10-18 Toshiba Corp 不揮発性半導体記憶装置
JP2014236015A (ja) * 2013-05-30 2014-12-15 ローム株式会社 半導体装置および半導体装置の製造方法
US9082654B2 (en) 2013-05-30 2015-07-14 Rohm Co., Ltd. Method of manufacturing non-volatile memory cell with simplified step of forming floating gate
US9246100B2 (en) * 2013-07-24 2016-01-26 Micron Technology, Inc. Memory cell array structures and methods of forming the same
US9548310B2 (en) * 2014-07-01 2017-01-17 Kabushiki Kaisha Toshiba Semiconductor device
TWI555179B (zh) * 2015-02-02 2016-10-21 力晶科技股份有限公司 隔離結構及具有其之非揮發性記憶體的製造方法
KR20170125177A (ko) * 2016-05-03 2017-11-14 삼성전자주식회사 정보 저장 소자 및 그 제조방법
KR20180120019A (ko) * 2017-04-26 2018-11-05 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
CN114678370B (zh) * 2022-05-30 2022-08-02 广州粤芯半导体技术有限公司 一种Flash结构及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742670A (en) * 1995-01-09 1998-04-21 Ncr Corporation Passive telephone monitor to control collaborative systems
JPH1027891A (ja) * 1996-07-12 1998-01-27 Denso Corp 不揮発性半導体メモリ
JP3519583B2 (ja) * 1997-09-19 2004-04-19 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
WO2000046809A1 (en) * 1999-02-01 2000-08-10 Hitachi, Ltd. Semiconductor integrated circuit and nonvolatile memory element
KR100304710B1 (ko) * 1999-08-30 2001-11-01 윤종용 셀 어레이 영역내에 벌크 바이어스 콘택 구조를 구비하는 비휘발성 메모리소자
US6559055B2 (en) * 2000-08-15 2003-05-06 Mosel Vitelic, Inc. Dummy structures that protect circuit elements during polishing
JP2002359308A (ja) 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
JP3944013B2 (ja) * 2002-07-09 2007-07-11 株式会社東芝 不揮発性半導体メモリ装置およびその製造方法
JP2004111917A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置及びその製造方法、不揮発性半導体記憶装置及びその製造方法、並びに不揮発性半導体記憶装置を備える電子装置
US7508048B2 (en) * 2003-01-16 2009-03-24 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby
US6930351B2 (en) * 2003-08-14 2005-08-16 Renesas Technology Corp. Semiconductor device with dummy gate electrode
KR100506941B1 (ko) * 2003-08-19 2005-08-05 삼성전자주식회사 더미 셀들을 갖는 플래쉬 메모리소자 및 그것의 소거방법들
KR20050064652A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
JP2005310285A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 半導体集積回路装置
JP2006012871A (ja) * 2004-06-22 2006-01-12 Nec Electronics Corp 不揮発性半導体記憶装置及びその製造方法
KR100643572B1 (ko) * 2005-09-29 2006-11-10 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device

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