JP5151303B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5151303B2 JP5151303B2 JP2007204835A JP2007204835A JP5151303B2 JP 5151303 B2 JP5151303 B2 JP 5151303B2 JP 2007204835 A JP2007204835 A JP 2007204835A JP 2007204835 A JP2007204835 A JP 2007204835A JP 5151303 B2 JP5151303 B2 JP 5151303B2
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- 239000004065 semiconductor Substances 0.000 title claims description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 84
- 239000010410 layer Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 230000015572 biosynthetic process Effects 0.000 claims description 69
- 229910021332 silicide Inorganic materials 0.000 claims description 54
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 54
- 239000011229 interlayer Substances 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 description 124
- 238000005530 etching Methods 0.000 description 57
- 238000005498 polishing Methods 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- 239000010941 cobalt Substances 0.000 description 27
- 229910017052 cobalt Inorganic materials 0.000 description 27
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 27
- 238000001459 lithography Methods 0.000 description 27
- 229910052581 Si3N4 Inorganic materials 0.000 description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 21
- 238000002955 isolation Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 17
- 150000002739 metals Chemical class 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 13
- 238000001039 wet etching Methods 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 9
- 229910019001 CoSi Inorganic materials 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 229910052735 hafnium Inorganic materials 0.000 description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 8
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 4
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017121 AlSiO Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 150000003657 tungsten Chemical class 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (4)
- 半導体基板に、第1トランジスタ群と、前記第1トランジスタ群の動作電圧よりも低い動作電圧の第2トランジスタ群とを有し、
前記第1トランジスタ群は、前記半導体基板上に第1ゲート絶縁膜を介して形成された第1ゲート電極と、該第1ゲート電極上に形成されたシリサイド層とを有し、
前記第2トランジスタ群は、前記半導体基板上に形成されたダミーゲート部を除去して形成したゲート形成溝内に、第2ゲート絶縁膜を介して形成された第2ゲート電極を有する半導体装置の製造方法において、
前記第1ゲート電極を前記ダミーゲート部に形成されたダミーゲート電極よりも低くなるように形成してから、前記第1トランジスタ群の前記第1ゲート電極の上部に前記シリサイド層を形成し、
前記シリサイド層を被覆する層間絶縁膜を形成して表面を平坦化してから、前記ダミーゲート部を除去して前記ゲート形成溝を形成する
ことを特徴とする半導体装置の製造方法。 - 前記半導体基板上の前記第1トランジスタ群が形成される第1領域に、第1ゲート絶縁膜、第1ゲート電極、ハードマスクを順に積層したゲート部を形成すると同時に、前記第2トランジスタ群が形成される第2領域に、ダミーゲート絶縁膜、ダミーゲート電極、ハードマスクを順に積層した前記ダミーゲート部を形成する工程と、
前記半導体基板の前記第1領域に前記第1トランジスタ群の第1ソース/ドレイン領域と、前記半導体基板の前記第2領域に前記第2トランジスタ群の第2ソース/ドレイン領域とをそれぞれに形成する工程と、
前記第1領域の各ゲート部、ダミーゲート部を被覆するライナー絶縁膜を形成した後、前記各ゲート部上の前記ライナー絶縁膜と前記ハードマスクを除去して前記第1ゲート電極を露出させる工程と、
前記ダミーゲート電極よりも低くなるよう前記第1ゲート電極の上部を除去する工程と、
前記第1領域の第1ゲート電極の上面に前記シリサイド層を形成する工程と、
前記ライナー絶縁膜上に前記シリサイド層を被覆する前記層間絶縁膜を形成する工程と、
前記第2領域の前記ダミーゲート部を除去して前記ゲート形成溝を形成する工程と、
前記ゲート形成溝に前記第2ゲート絶縁膜を形成した後、前記ゲート形成溝内に導電材料を埋め込んで前記第2ゲート電極を形成する工程と
を順に行うことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第1ゲート電極および前記第2ゲート電極は、それぞれ、ポリシリコンおよび金属で構成されている
ことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第2ゲート絶縁膜は、前記第1ゲート絶縁膜よりも比誘電率の高い絶縁膜を有する
ことを特徴とする請求項1記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007204835A JP5151303B2 (ja) | 2007-08-07 | 2007-08-07 | 半導体装置の製造方法 |
TW097127963A TWI396286B (zh) | 2007-08-07 | 2008-07-23 | 半導體裝置的製造方法 |
US12/182,322 US8420486B2 (en) | 2007-08-07 | 2008-07-30 | Method for manufacturing semiconductor device |
CN2008101354351A CN101364570B (zh) | 2007-08-07 | 2008-08-07 | 半导体装置制造方法 |
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US7723192B2 (en) * | 2008-03-14 | 2010-05-25 | Advanced Micro Devices, Inc. | Integrated circuit long and short channel metal gate devices and method of manufacture |
US8294216B2 (en) * | 2008-08-14 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors |
US7943457B2 (en) * | 2009-04-14 | 2011-05-17 | International Business Machines Corporation | Dual metal and dual dielectric integration for metal high-k FETs |
CN102760751B (zh) * | 2011-04-27 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的结构及形成方法 |
CN102969345B (zh) * | 2011-08-31 | 2015-04-01 | 中芯国际集成电路制造(上海)有限公司 | 具有t型鳍部的鳍式场效应管及其形成方法 |
JP6042415B2 (ja) * | 2012-04-05 | 2016-12-14 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法 |
CN103378003A (zh) * | 2012-04-23 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 一种应力记忆技术的cmos器件制作方法 |
US8962407B2 (en) * | 2012-08-28 | 2015-02-24 | Globalfoundries Inc. | Method and device to achieve self-stop and precise gate height |
CN103854980B (zh) * | 2012-11-29 | 2016-05-11 | 中国科学院微电子研究所 | 形成半导体器件替代栅的方法以及制造半导体器件的方法 |
JP5989538B2 (ja) * | 2012-12-25 | 2016-09-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8993389B2 (en) * | 2013-01-04 | 2015-03-31 | International Business Machines Corporation | Dummy gate interconnect for semiconductor device |
CN103413758B (zh) * | 2013-07-17 | 2017-02-08 | 华为技术有限公司 | 半导体鳍条的制作方法、FinFET器件的制作方法 |
US9054135B2 (en) * | 2013-07-31 | 2015-06-09 | Globalfoundries Singapore Pte. Ltd. | Methods for fabricating integrated circuits with a high-voltage MOSFET |
CN106910737B (zh) * | 2015-12-23 | 2021-01-15 | 联华电子股份有限公司 | 半导体元件及其形成方法 |
CN116801622A (zh) * | 2018-09-11 | 2023-09-22 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
CN110867377B (zh) * | 2019-11-25 | 2023-09-19 | 上海华力集成电路制造有限公司 | 虚拟栅的平坦化方法 |
US11984324B2 (en) | 2020-06-30 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
CN113394087B (zh) * | 2021-05-25 | 2024-01-19 | 上海华力集成电路制造有限公司 | 后栅工艺中伪栅平坦化方法 |
CN113643979B (zh) * | 2021-07-20 | 2024-08-02 | 上海华力集成电路制造有限公司 | Hv cmos cmp方法 |
CN114526852B (zh) * | 2021-12-31 | 2024-07-02 | 中国石油天然气集团有限公司 | 扭矩测量单元和装置、井下扭矩测量系统和方法及应用 |
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JP2000307010A (ja) * | 1999-04-16 | 2000-11-02 | Nec Corp | 半導体集積回路装置およびその製造方法 |
US6033963A (en) * | 1999-08-30 | 2000-03-07 | Taiwan Semiconductor Manufacturing Company | Method of forming a metal gate for CMOS devices using a replacement gate process |
JP2001102443A (ja) * | 1999-09-27 | 2001-04-13 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4244566B2 (ja) * | 2002-05-31 | 2009-03-25 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2004095938A (ja) * | 2002-09-02 | 2004-03-25 | Sony Corp | 半導体装置の製造方法および半導体装置 |
US7326609B2 (en) * | 2005-05-06 | 2008-02-05 | Chartered Semiconductor Manufacturing, Ltd. | Semiconductor device and fabrication method |
JP2006344900A (ja) * | 2005-06-10 | 2006-12-21 | Toshiba Corp | 半導体装置 |
US7332433B2 (en) * | 2005-09-22 | 2008-02-19 | Sematech Inc. | Methods of modulating the work functions of film layers |
US8809179B2 (en) * | 2006-04-13 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing topography of non-volatile memory and resulting memory cells |
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Also Published As
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CN101364570B (zh) | 2010-12-08 |
US20090042348A1 (en) | 2009-02-12 |
JP2009043794A (ja) | 2009-02-26 |
TW200915569A (en) | 2009-04-01 |
TWI396286B (zh) | 2013-05-11 |
US8420486B2 (en) | 2013-04-16 |
CN101364570A (zh) | 2009-02-11 |
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