KR100759622B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR100759622B1
KR100759622B1 KR1020060051817A KR20060051817A KR100759622B1 KR 100759622 B1 KR100759622 B1 KR 100759622B1 KR 1020060051817 A KR1020060051817 A KR 1020060051817A KR 20060051817 A KR20060051817 A KR 20060051817A KR 100759622 B1 KR100759622 B1 KR 100759622B1
Authority
KR
South Korea
Prior art keywords
insulating film
gate insulating
memory cell
cell region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060051817A
Other languages
English (en)
Korean (ko)
Other versions
KR20060128726A (ko
Inventor
신야 다까하시
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20060128726A publication Critical patent/KR20060128726A/ko
Application granted granted Critical
Publication of KR100759622B1 publication Critical patent/KR100759622B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020060051817A 2005-06-10 2006-06-09 반도체 장치 Expired - Fee Related KR100759622B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005171306A JP2006344900A (ja) 2005-06-10 2005-06-10 半導体装置
JPJP-P-2005-00171306 2005-06-10

Publications (2)

Publication Number Publication Date
KR20060128726A KR20060128726A (ko) 2006-12-14
KR100759622B1 true KR100759622B1 (ko) 2007-09-17

Family

ID=37523385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060051817A Expired - Fee Related KR100759622B1 (ko) 2005-06-10 2006-06-09 반도체 장치

Country Status (3)

Country Link
US (2) US7863668B2 (enExample)
JP (1) JP2006344900A (enExample)
KR (1) KR100759622B1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4764284B2 (ja) * 2006-08-11 2011-08-31 株式会社東芝 半導体装置およびその製造方法
JP5076570B2 (ja) * 2007-03-16 2012-11-21 富士通セミコンダクター株式会社 半導体装置とその製造方法
US20080315326A1 (en) * 2007-06-21 2008-12-25 Werner Graf Method for forming an integrated circuit having an active semiconductor device and integrated circuit
JP5151303B2 (ja) * 2007-08-07 2013-02-27 ソニー株式会社 半導体装置の製造方法
JP2009054956A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 半導体メモリ
JP4560100B2 (ja) * 2008-03-24 2010-10-13 株式会社東芝 半導体装置
JP5548350B2 (ja) * 2008-09-30 2014-07-16 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5306036B2 (ja) * 2009-04-21 2013-10-02 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP2011165975A (ja) * 2010-02-10 2011-08-25 Toshiba Corp 不揮発性半導体記憶装置
JP2010153899A (ja) * 2010-02-22 2010-07-08 Toshiba Corp 半導体メモリ
JP2011204756A (ja) 2010-03-24 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP5523912B2 (ja) 2010-04-19 2014-06-18 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
KR101660243B1 (ko) * 2010-06-14 2016-09-27 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조방법
JP2012199313A (ja) * 2011-03-18 2012-10-18 Toshiba Corp 不揮発性半導体記憶装置
JP2014236015A (ja) * 2013-05-30 2014-12-15 ローム株式会社 半導体装置および半導体装置の製造方法
US9082654B2 (en) 2013-05-30 2015-07-14 Rohm Co., Ltd. Method of manufacturing non-volatile memory cell with simplified step of forming floating gate
US9246100B2 (en) * 2013-07-24 2016-01-26 Micron Technology, Inc. Memory cell array structures and methods of forming the same
US9548310B2 (en) * 2014-07-01 2017-01-17 Kabushiki Kaisha Toshiba Semiconductor device
TWI555179B (zh) * 2015-02-02 2016-10-21 力晶科技股份有限公司 隔離結構及具有其之非揮發性記憶體的製造方法
KR20170125177A (ko) * 2016-05-03 2017-11-14 삼성전자주식회사 정보 저장 소자 및 그 제조방법
KR20180120019A (ko) * 2017-04-26 2018-11-05 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
CN114678370B (zh) * 2022-05-30 2022-08-02 广州粤芯半导体技术有限公司 一种Flash结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050064652A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR100643572B1 (ko) * 2005-09-29 2006-11-10 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742670A (en) * 1995-01-09 1998-04-21 Ncr Corporation Passive telephone monitor to control collaborative systems
JPH1027891A (ja) * 1996-07-12 1998-01-27 Denso Corp 不揮発性半導体メモリ
JP3519583B2 (ja) * 1997-09-19 2004-04-19 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
WO2000046809A1 (en) * 1999-02-01 2000-08-10 Hitachi, Ltd. Semiconductor integrated circuit and nonvolatile memory element
KR100304710B1 (ko) * 1999-08-30 2001-11-01 윤종용 셀 어레이 영역내에 벌크 바이어스 콘택 구조를 구비하는 비휘발성 메모리소자
US6559055B2 (en) * 2000-08-15 2003-05-06 Mosel Vitelic, Inc. Dummy structures that protect circuit elements during polishing
JP2002359308A (ja) 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
JP3944013B2 (ja) * 2002-07-09 2007-07-11 株式会社東芝 不揮発性半導体メモリ装置およびその製造方法
JP2004111917A (ja) * 2002-07-23 2004-04-08 Toshiba Corp 半導体装置及びその製造方法、不揮発性半導体記憶装置及びその製造方法、並びに不揮発性半導体記憶装置を備える電子装置
US7508048B2 (en) * 2003-01-16 2009-03-24 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby
US6930351B2 (en) * 2003-08-14 2005-08-16 Renesas Technology Corp. Semiconductor device with dummy gate electrode
KR100506941B1 (ko) * 2003-08-19 2005-08-05 삼성전자주식회사 더미 셀들을 갖는 플래쉬 메모리소자 및 그것의 소거방법들
JP2005310285A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 半導体集積回路装置
JP2006012871A (ja) * 2004-06-22 2006-01-12 Nec Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050064652A (ko) * 2003-12-24 2005-06-29 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
KR100643572B1 (ko) * 2005-09-29 2006-11-10 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1006435720000(korea)
10-2005-64652

Also Published As

Publication number Publication date
KR20060128726A (ko) 2006-12-14
US20110076834A1 (en) 2011-03-31
US7863668B2 (en) 2011-01-04
US7998811B2 (en) 2011-08-16
JP2006344900A (ja) 2006-12-21
US20060278919A1 (en) 2006-12-14

Similar Documents

Publication Publication Date Title
KR100759622B1 (ko) 반도체 장치
US6642105B2 (en) Semiconductor device having multi-gate insulating layers and methods of fabricating the same
US7948026B2 (en) Non-volatile semiconductor memory device and method of manufacturing the same
US8525273B2 (en) Integrated circuit devices including device isolation structures and methods of fabricating the same
US20070102731A1 (en) Semiconductor memory device and method of manufacturing the same
US6919596B2 (en) Structure of a capacitive element of a booster circuit included in a semiconductor device and method of manufacturing such a structure
US6468862B1 (en) High capacitive-coupling ratio of stacked-gate flash memory having high mechanical strength floating gate
US7061041B2 (en) Memory device
US7494869B2 (en) Semiconductor integrated circuit device and manufacturing method thereof
US20040183139A1 (en) Self-aligned trench isolation method and semiconductor device fabricated using the same
JP2001332637A (ja) 半導体記憶装置及びその製造方法
KR100480408B1 (ko) 반도체 기억 장치 및 그 제조 방법
US20050287742A1 (en) Method of manufacturing a nonvolatile semiconductor memory device
KR100330948B1 (ko) 비휘발성 반도체 메모리 장치 및 그 제조방법
US7445999B2 (en) Fabricating method of a flash memory cell
CN113611704B (zh) 半导体结构的制作方法
US6781188B2 (en) Nonvolatile semiconductor memory device
JP2007141962A (ja) 半導体記憶装置及びその製造方法
JP2009253037A (ja) 半導体装置及び半導体装置の製造方法
US20070048937A1 (en) Method of fabricating non-volatile memory
KR20050061766A (ko) 반도체 메모리 소자 및 그 제조 방법
KR20070070412A (ko) 고전압 트랜지스터 및 그 제조방법
KR20060105854A (ko) 반도체 소자의 리세스게이트 형성 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20110727

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120821

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130912

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130912

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000