JP2000174242A5 - - Google Patents

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Publication number
JP2000174242A5
JP2000174242A5 JP1999252181A JP25218199A JP2000174242A5 JP 2000174242 A5 JP2000174242 A5 JP 2000174242A5 JP 1999252181 A JP1999252181 A JP 1999252181A JP 25218199 A JP25218199 A JP 25218199A JP 2000174242 A5 JP2000174242 A5 JP 2000174242A5
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JP
Japan
Prior art keywords
gate electrode
insulating film
semiconductor substrate
element isolation
film
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JP1999252181A
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English (en)
Japanese (ja)
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JP2000174242A (ja
JP4237344B2 (ja
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Priority to JP25218199A priority Critical patent/JP4237344B2/ja
Priority claimed from JP25218199A external-priority patent/JP4237344B2/ja
Priority to US09/405,838 priority patent/US6222225B1/en
Publication of JP2000174242A publication Critical patent/JP2000174242A/ja
Priority to US09/800,914 priority patent/US6413809B2/en
Publication of JP2000174242A5 publication Critical patent/JP2000174242A5/ja
Application granted granted Critical
Publication of JP4237344B2 publication Critical patent/JP4237344B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP25218199A 1998-09-29 1999-09-06 半導体装置及びその製造方法 Expired - Fee Related JP4237344B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP25218199A JP4237344B2 (ja) 1998-09-29 1999-09-06 半導体装置及びその製造方法
US09/405,838 US6222225B1 (en) 1998-09-29 1999-09-27 Semiconductor device and manufacturing method thereof
US09/800,914 US6413809B2 (en) 1998-09-29 2001-03-08 Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27612698 1998-09-29
JP10-276126 1998-09-29
JP25218199A JP4237344B2 (ja) 1998-09-29 1999-09-06 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000174242A JP2000174242A (ja) 2000-06-23
JP2000174242A5 true JP2000174242A5 (enExample) 2005-06-30
JP4237344B2 JP4237344B2 (ja) 2009-03-11

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JP25218199A Expired - Fee Related JP4237344B2 (ja) 1998-09-29 1999-09-06 半導体装置及びその製造方法

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US (2) US6222225B1 (enExample)
JP (1) JP4237344B2 (enExample)

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