JP4237344B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4237344B2
JP4237344B2 JP25218199A JP25218199A JP4237344B2 JP 4237344 B2 JP4237344 B2 JP 4237344B2 JP 25218199 A JP25218199 A JP 25218199A JP 25218199 A JP25218199 A JP 25218199A JP 4237344 B2 JP4237344 B2 JP 4237344B2
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gate electrode
insulating film
film
element isolation
material film
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Expired - Fee Related
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JP25218199A
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JP2000174242A5 (enExample
JP2000174242A (ja
Inventor
卓矢 中村
直樹 小井土
裕久 飯塚
一仁 成田
誠一 有留
史隆 荒井
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Toshiba Corp
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Toshiba Corp
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Priority to JP25218199A priority Critical patent/JP4237344B2/ja
Priority to US09/405,838 priority patent/US6222225B1/en
Publication of JP2000174242A publication Critical patent/JP2000174242A/ja
Priority to US09/800,914 priority patent/US6413809B2/en
Publication of JP2000174242A5 publication Critical patent/JP2000174242A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
JP25218199A 1998-09-29 1999-09-06 半導体装置及びその製造方法 Expired - Fee Related JP4237344B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP25218199A JP4237344B2 (ja) 1998-09-29 1999-09-06 半導体装置及びその製造方法
US09/405,838 US6222225B1 (en) 1998-09-29 1999-09-27 Semiconductor device and manufacturing method thereof
US09/800,914 US6413809B2 (en) 1998-09-29 2001-03-08 Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27612698 1998-09-29
JP10-276126 1998-09-29
JP25218199A JP4237344B2 (ja) 1998-09-29 1999-09-06 半導体装置及びその製造方法

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JP2000174242A JP2000174242A (ja) 2000-06-23
JP2000174242A5 JP2000174242A5 (enExample) 2005-06-30
JP4237344B2 true JP4237344B2 (ja) 2009-03-11

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JP (1) JP4237344B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7941588B2 (en) 2006-09-29 2011-05-10 Kabushiki Kaisha Toshiba Multi-level nonvolatile semiconductor memory device

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US7941588B2 (en) 2006-09-29 2011-05-10 Kabushiki Kaisha Toshiba Multi-level nonvolatile semiconductor memory device

Also Published As

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JP2000174242A (ja) 2000-06-23
US6413809B2 (en) 2002-07-02
US6222225B1 (en) 2001-04-24
US20010018253A1 (en) 2001-08-30

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