TWI306312B - Floating gate memory cells with increased coupling ratio - Google Patents
Floating gate memory cells with increased coupling ratio Download PDFInfo
- Publication number
- TWI306312B TWI306312B TW092112230A TW92112230A TWI306312B TW I306312 B TWI306312 B TW I306312B TW 092112230 A TW092112230 A TW 092112230A TW 92112230 A TW92112230 A TW 92112230A TW I306312 B TWI306312 B TW I306312B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- spacer
- spacers
- stack
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title claims abstract description 11
- 238000010168 coupling process Methods 0.000 title claims abstract description 11
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 11
- 125000006850 spacer group Chemical group 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 241000282320 Panthera leo Species 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 241001649081 Dina Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02076771 | 2002-05-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405578A TW200405578A (en) | 2004-04-01 |
| TWI306312B true TWI306312B (en) | 2009-02-11 |
Family
ID=29414749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092112230A TWI306312B (en) | 2002-05-08 | 2003-05-05 | Floating gate memory cells with increased coupling ratio |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7045852B2 (enExample) |
| EP (1) | EP1506580B1 (enExample) |
| JP (1) | JP2005524994A (enExample) |
| CN (1) | CN100533772C (enExample) |
| AT (1) | ATE475200T1 (enExample) |
| AU (1) | AU2003216649A1 (enExample) |
| DE (1) | DE60333452D1 (enExample) |
| TW (1) | TWI306312B (enExample) |
| WO (1) | WO2003096431A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221008B2 (en) * | 2003-10-06 | 2007-05-22 | Sandisk Corporation | Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory |
| KR100650369B1 (ko) * | 2004-10-01 | 2006-11-27 | 주식회사 하이닉스반도체 | 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법 |
| US7381615B2 (en) * | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
| US7402886B2 (en) * | 2004-11-23 | 2008-07-22 | Sandisk Corporation | Memory with self-aligned trenches for narrow gap isolation regions |
| US7319618B2 (en) * | 2005-08-16 | 2008-01-15 | Macronic International Co., Ltd. | Low-k spacer structure for flash memory |
| US7541241B2 (en) * | 2005-12-12 | 2009-06-02 | Promos Technologies, Inc. | Method for fabricating memory cell |
| JP4364225B2 (ja) * | 2006-09-15 | 2009-11-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US8325530B2 (en) * | 2006-10-03 | 2012-12-04 | Macronix International Co., Ltd. | Cell operation methods using gate-injection for floating gate NAND flash memory |
| US20080160680A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Methods of fabricating shield plates for reduced field coupling in nonvolatile memory |
| US20080157169A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Shield plates for reduced field coupling in nonvolatile memory |
| TW200847404A (en) * | 2007-05-18 | 2008-12-01 | Nanya Technology Corp | Flash memory device and method for fabricating thereof |
| JP2009278098A (ja) * | 2008-05-13 | 2009-11-26 | Hynix Semiconductor Inc | フラッシュメモリ素子及びその製造方法 |
| CN101866691B (zh) * | 2010-04-29 | 2015-06-17 | 上海华虹宏力半导体制造有限公司 | 获得快闪存储单元电容耦合率的方法 |
| CN102867748B (zh) * | 2011-07-06 | 2015-09-23 | 中国科学院微电子研究所 | 一种晶体管及其制作方法和包括该晶体管的半导体芯片 |
| US8664059B2 (en) | 2012-04-26 | 2014-03-04 | International Business Machines Corporation | Non-volatile memory device formed by dual floating gate deposit |
| US20130285134A1 (en) | 2012-04-26 | 2013-10-31 | International Business Machines Corporation | Non-volatile memory device formed with etch stop layer in shallow trench isolation region |
| US20140015031A1 (en) * | 2012-07-12 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
| CN103715076B (zh) * | 2013-12-27 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 提高分栅式闪存中控制栅极对浮栅的耦合系数的方法 |
| US10003014B2 (en) * | 2014-06-20 | 2018-06-19 | International Business Machines Corporation | Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching |
| CN106992143B (zh) * | 2016-01-21 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件以及制备方法、电子装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
| US5445984A (en) * | 1994-11-28 | 1995-08-29 | United Microelectronics Corporation | Method of making a split gate flash memory cell |
| US5576232A (en) * | 1994-12-12 | 1996-11-19 | United Microelectronics Corp. | Fabrication process for flash memory in which channel lengths are controlled |
| US5650345A (en) | 1995-06-07 | 1997-07-22 | International Business Machines Corporation | Method of making self-aligned stacked gate EEPROM with improved coupling ratio |
| KR100278647B1 (ko) * | 1996-10-05 | 2001-02-01 | 윤종용 | 불휘발성 메모리소자 및 그 제조방법 |
| US6069382A (en) * | 1998-02-11 | 2000-05-30 | Cypress Semiconductor Corp. | Non-volatile memory cell having a high coupling ratio |
-
2003
- 2003-04-11 CN CNB038103206A patent/CN100533772C/zh not_active Expired - Fee Related
- 2003-04-11 AT AT03712560T patent/ATE475200T1/de not_active IP Right Cessation
- 2003-04-11 US US10/513,874 patent/US7045852B2/en not_active Expired - Lifetime
- 2003-04-11 EP EP03712560A patent/EP1506580B1/en not_active Expired - Lifetime
- 2003-04-11 DE DE60333452T patent/DE60333452D1/de not_active Expired - Lifetime
- 2003-04-11 JP JP2004504303A patent/JP2005524994A/ja active Pending
- 2003-04-11 AU AU2003216649A patent/AU2003216649A1/en not_active Abandoned
- 2003-04-11 WO PCT/IB2003/001485 patent/WO2003096431A1/en not_active Ceased
- 2003-05-05 TW TW092112230A patent/TWI306312B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005524994A (ja) | 2005-08-18 |
| DE60333452D1 (de) | 2010-09-02 |
| CN1653621A (zh) | 2005-08-10 |
| EP1506580A1 (en) | 2005-02-16 |
| US20050218445A1 (en) | 2005-10-06 |
| CN100533772C (zh) | 2009-08-26 |
| EP1506580B1 (en) | 2010-07-21 |
| WO2003096431A1 (en) | 2003-11-20 |
| TW200405578A (en) | 2004-04-01 |
| ATE475200T1 (de) | 2010-08-15 |
| AU2003216649A1 (en) | 2003-11-11 |
| US7045852B2 (en) | 2006-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |