JP4729060B2 - 半導体記憶装置の製造方法 - Google Patents
半導体記憶装置の製造方法 Download PDFInfo
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- JP4729060B2 JP4729060B2 JP2008044481A JP2008044481A JP4729060B2 JP 4729060 B2 JP4729060 B2 JP 4729060B2 JP 2008044481 A JP2008044481 A JP 2008044481A JP 2008044481 A JP2008044481 A JP 2008044481A JP 4729060 B2 JP4729060 B2 JP 4729060B2
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- film
- metal oxide
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 57
- 150000004706 metal oxides Chemical class 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 27
- 230000003197 catalytic effect Effects 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 13
- 238000002955 isolation Methods 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910003855 HfAlO Inorganic materials 0.000 description 3
- 229910004143 HfON Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical class [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000001301 oxygen Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Description
上記実施形態で説明したように、金属酸化物膜405に含まれる金属酸化物の触媒効果により準常圧熱CVD膜407の化学反応(TEOSの酸化)が促進される。つまり金属酸化物膜405の箇所においてCVD膜407が早く成長し、金属酸化物膜405より下方のワードラインWL間が埋め込まれず空洞408となる。
102 トンネル酸化膜
103 浮遊ゲート電極
104 インターポリ絶縁膜
105 制御ゲート電極
106 シリコン窒化膜
110 シリコン酸窒化膜
111 準常圧熱CVD膜
112 空洞
Claims (2)
- 半導体基板上に所定間隔を空けて、下から順に積層された第1の絶縁膜、電荷蓄積層、金属酸化物を含む第2の絶縁膜、及び制御ゲート電極をそれぞれ含む複数のワードラインを形成する工程と、
前記ワードライン及び前記ワードライン間の前記半導体基板表面を覆うように膜厚15nm以下のシリコン酸窒化膜を形成する工程と、
前記ワードライン間に、TEOS、O 3 、及びH 2 Oガス雰囲気で温度380℃〜480℃、圧力500Torr〜650Torrの条件下でCVD膜を形成する工程と、
を備え、
前記CVD膜を形成する工程では、前記金属酸化物の箇所において前記CVD膜を他箇所より早く成長させて、前記金属酸化物より低い領域を空洞にすることを特徴とする半導体記憶装置の製造方法。 - 半導体基板上に所定間隔を空けて、下から順に積層された第1の絶縁膜、電荷蓄積層、第2の絶縁膜、制御ゲート電極、及び金属酸化物膜をそれぞれ含む複数のワードラインを形成する工程と、
前記ワードライン及び前記ワードライン間の前記半導体基板表面を覆うように膜厚15nm以下のシリコン酸窒化膜を形成する工程と、
前記ワードライン間に、TEOS、O 3 、及びH 2 Oガス雰囲気で温度380℃〜480℃、圧力500Torr〜650Torrの条件下でCVD膜を形成する工程と、
を備え、
前記CVD膜を形成する工程では、前記金属酸化物膜の箇所において前記CVD膜を他箇所より早く成長させて、前記金属酸化物膜より低い領域を空洞にすることを特徴とする半導体記憶装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008044481A JP4729060B2 (ja) | 2008-02-26 | 2008-02-26 | 半導体記憶装置の製造方法 |
US12/391,953 US7915156B2 (en) | 2008-02-26 | 2009-02-24 | Semiconductor memory device and method for manufacturing the same |
US12/929,894 US20110147822A1 (en) | 2008-02-26 | 2011-02-23 | Semiconductor memory device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008044481A JP4729060B2 (ja) | 2008-02-26 | 2008-02-26 | 半導体記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009206152A JP2009206152A (ja) | 2009-09-10 |
JP4729060B2 true JP4729060B2 (ja) | 2011-07-20 |
Family
ID=40997458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008044481A Expired - Fee Related JP4729060B2 (ja) | 2008-02-26 | 2008-02-26 | 半導体記憶装置の製造方法 |
Country Status (2)
Country | Link |
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US (2) | US7915156B2 (ja) |
JP (1) | JP4729060B2 (ja) |
Families Citing this family (41)
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JP2008283095A (ja) * | 2007-05-14 | 2008-11-20 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP5380190B2 (ja) * | 2009-07-21 | 2014-01-08 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8546239B2 (en) | 2010-06-11 | 2013-10-01 | Sandisk Technologies Inc. | Methods of fabricating non-volatile memory with air gaps |
US8946048B2 (en) | 2010-06-19 | 2015-02-03 | Sandisk Technologies Inc. | Method of fabricating non-volatile memory with flat cell structures and air gap isolation |
US8603890B2 (en) | 2010-06-19 | 2013-12-10 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory |
US8492224B2 (en) | 2010-06-20 | 2013-07-23 | Sandisk Technologies Inc. | Metal control gate structures and air gap isolation in non-volatile memory |
KR101736982B1 (ko) * | 2010-08-03 | 2017-05-17 | 삼성전자 주식회사 | 수직 구조의 비휘발성 메모리 소자 |
KR20120015178A (ko) * | 2010-08-11 | 2012-02-21 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자 제조 방법 |
US8450789B2 (en) | 2010-08-24 | 2013-05-28 | Micron Technology, Inc. | Memory array with an air gap between memory cells and the formation thereof |
KR101559345B1 (ko) | 2010-08-26 | 2015-10-15 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
KR20120026313A (ko) | 2010-09-09 | 2012-03-19 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
KR20120043979A (ko) * | 2010-10-27 | 2012-05-07 | 삼성전자주식회사 | 비휘발성 기억 소자 및 비휘발성 기억 소자의 제조 방법 |
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SG181212A1 (en) * | 2010-11-18 | 2012-06-28 | Toshiba Kk | Nonvolatile semiconductor memory and method of manufacturing with multiple air gaps |
JP5570953B2 (ja) | 2010-11-18 | 2014-08-13 | 株式会社東芝 | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
JP5591667B2 (ja) * | 2010-11-30 | 2014-09-17 | 株式会社東芝 | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
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JP5591668B2 (ja) * | 2010-11-30 | 2014-09-17 | 株式会社東芝 | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
US8778749B2 (en) * | 2011-01-12 | 2014-07-15 | Sandisk Technologies Inc. | Air isolation in high density non-volatile memory |
JP2013021102A (ja) * | 2011-07-11 | 2013-01-31 | Toshiba Corp | 半導体記憶装置 |
US8569130B2 (en) | 2011-07-28 | 2013-10-29 | Micron Technology, Inc. | Forming air gaps in memory arrays and memory arrays with air gaps thus formed |
US9123714B2 (en) | 2012-02-16 | 2015-09-01 | Sandisk Technologies Inc. | Metal layer air gap formation |
JP2013197417A (ja) | 2012-03-21 | 2013-09-30 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
JP2013201185A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
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JP2014036048A (ja) * | 2012-08-07 | 2014-02-24 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP5820353B2 (ja) * | 2012-08-20 | 2015-11-24 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
US9349740B2 (en) | 2014-01-24 | 2016-05-24 | Sandisk Technologies Inc. | Non-volatile storage element with suspended charge storage region |
US9177853B1 (en) | 2014-05-14 | 2015-11-03 | Sandisk Technologies Inc. | Barrier layer stack for bit line air gap formation |
US9478461B2 (en) | 2014-09-24 | 2016-10-25 | Sandisk Technologies Llc | Conductive line structure with openings |
US9524904B2 (en) | 2014-10-21 | 2016-12-20 | Sandisk Technologies Llc | Early bit line air gap formation |
US9401305B2 (en) | 2014-11-05 | 2016-07-26 | Sandisk Technologies Llc | Air gaps structures for damascene metal patterning |
US9847249B2 (en) | 2014-11-05 | 2017-12-19 | Sandisk Technologies Llc | Buried etch stop layer for damascene bit line formation |
US9748311B2 (en) * | 2014-11-07 | 2017-08-29 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US9524973B1 (en) | 2015-06-30 | 2016-12-20 | Sandisk Technologies Llc | Shallow trench air gaps and their formation |
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US9391081B1 (en) | 2015-09-08 | 2016-07-12 | Sandisk Technologies Llc | Metal indentation to increase inter-metal breakdown voltage |
US10818804B2 (en) | 2015-10-28 | 2020-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Floating gate isolation and method for manufacturing the same |
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JPH08139211A (ja) * | 1994-11-11 | 1996-05-31 | Toshiba Corp | 半導体記憶装置 |
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-
2008
- 2008-02-26 JP JP2008044481A patent/JP4729060B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-24 US US12/391,953 patent/US7915156B2/en not_active Expired - Fee Related
-
2011
- 2011-02-23 US US12/929,894 patent/US20110147822A1/en not_active Abandoned
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JPH08139211A (ja) * | 1994-11-11 | 1996-05-31 | Toshiba Corp | 半導体記憶装置 |
JP2005044844A (ja) * | 2003-07-23 | 2005-02-17 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2006302950A (ja) * | 2005-04-15 | 2006-11-02 | Renesas Technology Corp | 不揮発性半導体装置および不揮発性半導体装置の製造方法 |
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JP2007299975A (ja) * | 2006-05-01 | 2007-11-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2009206152A (ja) | 2009-09-10 |
US20110147822A1 (en) | 2011-06-23 |
US20090212352A1 (en) | 2009-08-27 |
US7915156B2 (en) | 2011-03-29 |
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