JP2009514212A5 - - Google Patents

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Publication number
JP2009514212A5
JP2009514212A5 JP2008537717A JP2008537717A JP2009514212A5 JP 2009514212 A5 JP2009514212 A5 JP 2009514212A5 JP 2008537717 A JP2008537717 A JP 2008537717A JP 2008537717 A JP2008537717 A JP 2008537717A JP 2009514212 A5 JP2009514212 A5 JP 2009514212A5
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JP
Japan
Prior art keywords
memory cell
substrate
thyristor
trench
isolation structure
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Application number
JP2008537717A
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English (en)
Japanese (ja)
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JP2009514212A (ja
JP4893971B2 (ja
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Publication date
Priority claimed from US11/263,254 external-priority patent/US7655973B2/en
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Publication of JP2009514212A publication Critical patent/JP2009514212A/ja
Publication of JP2009514212A5 publication Critical patent/JP2009514212A5/ja
Application granted granted Critical
Publication of JP4893971B2 publication Critical patent/JP4893971B2/ja
Active legal-status Critical Current
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JP2008537717A 2005-10-31 2006-09-26 溝形チャネルの負性微分抵抗をベースとするメモリセル Active JP4893971B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/263,254 US7655973B2 (en) 2005-10-31 2005-10-31 Recessed channel negative differential resistance-based memory cell
US11/263,254 2005-10-31
PCT/US2006/037750 WO2007055817A2 (en) 2005-10-31 2006-09-26 Recessed channel negative differential resistance-based memory cell

Publications (3)

Publication Number Publication Date
JP2009514212A JP2009514212A (ja) 2009-04-02
JP2009514212A5 true JP2009514212A5 (enExample) 2009-12-17
JP4893971B2 JP4893971B2 (ja) 2012-03-07

Family

ID=37995128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537717A Active JP4893971B2 (ja) 2005-10-31 2006-09-26 溝形チャネルの負性微分抵抗をベースとするメモリセル

Country Status (7)

Country Link
US (4) US7655973B2 (enExample)
JP (1) JP4893971B2 (enExample)
KR (1) KR100989772B1 (enExample)
CN (2) CN101300665B (enExample)
DE (1) DE112006002913B4 (enExample)
TW (1) TWI334139B (enExample)
WO (1) WO2007055817A2 (enExample)

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CN104425388B (zh) * 2013-09-06 2017-04-05 苏州东微半导体有限公司 一种半浮栅器件的制造方法及器件
US9553171B2 (en) * 2014-02-14 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device and method for forming the same
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