JP4893971B2 - 溝形チャネルの負性微分抵抗をベースとするメモリセル - Google Patents

溝形チャネルの負性微分抵抗をベースとするメモリセル Download PDF

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Publication number
JP4893971B2
JP4893971B2 JP2008537717A JP2008537717A JP4893971B2 JP 4893971 B2 JP4893971 B2 JP 4893971B2 JP 2008537717 A JP2008537717 A JP 2008537717A JP 2008537717 A JP2008537717 A JP 2008537717A JP 4893971 B2 JP4893971 B2 JP 4893971B2
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Prior art keywords
memory cell
thyristor
substrate
cell
trench
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JP2009514212A (ja
JP2009514212A5 (enExample
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モウリ，チャンドラ
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/20—Subject matter not provided for in other groups of this subclass comprising memory cells having thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
JP2008537717A 2005-10-31 2006-09-26 溝形チャネルの負性微分抵抗をベースとするメモリセル Active JP4893971B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/263,254 US7655973B2 (en) 2005-10-31 2005-10-31 Recessed channel negative differential resistance-based memory cell
US11/263,254 2005-10-31
PCT/US2006/037750 WO2007055817A2 (en) 2005-10-31 2006-09-26 Recessed channel negative differential resistance-based memory cell

Publications (3)

Publication Number Publication Date
JP2009514212A JP2009514212A (ja) 2009-04-02
JP2009514212A5 JP2009514212A5 (enExample) 2009-12-17
JP4893971B2 true JP4893971B2 (ja) 2012-03-07

Family

ID=37995128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537717A Active JP4893971B2 (ja) 2005-10-31 2006-09-26 溝形チャネルの負性微分抵抗をベースとするメモリセル

Country Status (7)

Country Link
US (4) US7655973B2 (enExample)
JP (1) JP4893971B2 (enExample)
KR (1) KR100989772B1 (enExample)
CN (2) CN101300665B (enExample)
DE (1) DE112006002913B4 (enExample)
TW (1) TWI334139B (enExample)
WO (1) WO2007055817A2 (enExample)

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CN101814503B (zh) * 2010-04-08 2012-05-23 复旦大学 一种互补栅控pnpn场效应晶体管及其制造方法
US8535992B2 (en) 2010-06-29 2013-09-17 Micron Technology, Inc. Thyristor random access memory device and method
US8455919B2 (en) * 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method
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US8525245B2 (en) 2011-04-21 2013-09-03 International Business Machines Corporation eDRAM having dynamic retention and performance tradeoff
US8816470B2 (en) 2011-04-21 2014-08-26 International Business Machines Corporation Independently voltage controlled volume of silicon on a silicon on insulator chip
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KR101862345B1 (ko) 2012-02-27 2018-07-05 삼성전자주식회사 모오스 전계효과 트랜지스터를 포함하는 반도체 장치 및 그 제조 방법
KR20130138045A (ko) * 2012-06-08 2013-12-18 국립대학법인 울산과학기술대학교 산학협력단 Ｎｄｒ 소자 및 그 제작공정
CN104425388B (zh) * 2013-09-06 2017-04-05 苏州东微半导体有限公司 一种半浮栅器件的制造方法及器件
US9553171B2 (en) * 2014-02-14 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device and method for forming the same
US20150333068A1 (en) 2014-05-14 2015-11-19 Globalfoundries Singapore Pte. Ltd. Thyristor random access memory
US9773681B2 (en) * 2015-06-05 2017-09-26 Vanguard International Semiconductor Corporation Semiconductor device with a trench and method for manufacturing the same
FR3038774B1 (fr) * 2015-07-08 2018-03-02 Stmicroelectronics (Rousset) Sas Procede de realisation d'un transistor haute tension a encombrement reduit, et circuit integre correspondant
US9899390B2 (en) * 2016-02-08 2018-02-20 Kilopass Technology, Inc. Methods and systems for reducing electrical disturb effects between thyristor memory cells using heterostructured cathodes
JP2017174906A (ja) * 2016-03-22 2017-09-28 富士ゼロックス株式会社 発光部品、プリントヘッド及び画像形成装置
KR101928629B1 (ko) 2016-12-01 2018-12-12 한양대학교 산학협력단 2단자 수직형 1t-디램 및 그 제조 방법
WO2019245702A1 (en) * 2018-06-19 2019-12-26 Applied Materials, Inc. Pulsed plasma deposition etch step coverage improvement
KR102552464B1 (ko) 2018-11-19 2023-07-06 삼성전자 주식회사 반도체 소자
KR102156685B1 (ko) 2018-11-27 2020-09-16 한양대학교 산학협력단 2단자 수직형 사이리스터 기반 1t 디램
FR3095891B1 (fr) * 2019-05-09 2023-01-13 St Microelectronics Sa Circuit électronique
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JPS5526698A (en) * 1978-08-10 1980-02-26 Siemens Ag Thyristor
JPH05175491A (ja) * 1991-12-20 1993-07-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
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JP2007110110A (ja) * 2005-09-30 2007-04-26 Qimonda Ag トレンチトランジスタの形成方法及び該当するトレンチトランジスタ

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JPS5526698A (en) * 1978-08-10 1980-02-26 Siemens Ag Thyristor
JPH05175491A (ja) * 1991-12-20 1993-07-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002517905A (ja) * 1998-06-05 2002-06-18 スタンフォード ユニバーシティ 動作エンハンサーを備えた半導体電流スイッチング装置とそのための方法
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JP2007110110A (ja) * 2005-09-30 2007-04-26 Qimonda Ag トレンチトランジスタの形成方法及び該当するトレンチトランジスタ

Also Published As

Publication number Publication date
US7915673B2 (en) 2011-03-29
WO2007055817A3 (en) 2007-07-05
US20130140601A1 (en) 2013-06-06
JP2009514212A (ja) 2009-04-02
DE112006002913B4 (de) 2015-09-17
US20100133607A1 (en) 2010-06-03
CN102339856A (zh) 2012-02-01
CN101300665A (zh) 2008-11-05
US8119459B2 (en) 2012-02-21
TWI334139B (en) 2010-12-01
US20110151629A1 (en) 2011-06-23
TW200731259A (en) 2007-08-16
US7655973B2 (en) 2010-02-02
CN102339856B (zh) 2016-02-24
DE112006002913T5 (de) 2008-09-25
CN101300665B (zh) 2011-12-07
WO2007055817A2 (en) 2007-05-18
KR100989772B1 (ko) 2010-10-26
KR20080066742A (ko) 2008-07-16
US20070096203A1 (en) 2007-05-03
US8686494B2 (en) 2014-04-01

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