TWI334139B - Memory cell and method for forming the same - Google Patents

Memory cell and method for forming the same Download PDF

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Publication number
TWI334139B
TWI334139B TW095138151A TW95138151A TWI334139B TW I334139 B TWI334139 B TW I334139B TW 095138151 A TW095138151 A TW 095138151A TW 95138151 A TW95138151 A TW 95138151A TW I334139 B TWI334139 B TW I334139B
Authority
TW
Taiwan
Prior art keywords
substrate
trench
thyristor
unit
isolation structure
Prior art date
Application number
TW095138151A
Other languages
English (en)
Chinese (zh)
Other versions
TW200731259A (en
Inventor
Chandra Mouli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200731259A publication Critical patent/TW200731259A/zh
Application granted granted Critical
Publication of TWI334139B publication Critical patent/TWI334139B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/20—Subject matter not provided for in other groups of this subclass comprising memory cells having thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
TW095138151A 2005-10-31 2006-10-17 Memory cell and method for forming the same TWI334139B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/263,254 US7655973B2 (en) 2005-10-31 2005-10-31 Recessed channel negative differential resistance-based memory cell

Publications (2)

Publication Number Publication Date
TW200731259A TW200731259A (en) 2007-08-16
TWI334139B true TWI334139B (en) 2010-12-01

Family

ID=37995128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138151A TWI334139B (en) 2005-10-31 2006-10-17 Memory cell and method for forming the same

Country Status (7)

Country Link
US (4) US7655973B2 (enExample)
JP (1) JP4893971B2 (enExample)
KR (1) KR100989772B1 (enExample)
CN (2) CN101300665B (enExample)
DE (1) DE112006002913B4 (enExample)
TW (1) TWI334139B (enExample)
WO (1) WO2007055817A2 (enExample)

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Also Published As

Publication number Publication date
JP4893971B2 (ja) 2012-03-07
US7915673B2 (en) 2011-03-29
WO2007055817A3 (en) 2007-07-05
US20130140601A1 (en) 2013-06-06
JP2009514212A (ja) 2009-04-02
DE112006002913B4 (de) 2015-09-17
US20100133607A1 (en) 2010-06-03
CN102339856A (zh) 2012-02-01
CN101300665A (zh) 2008-11-05
US8119459B2 (en) 2012-02-21
US20110151629A1 (en) 2011-06-23
TW200731259A (en) 2007-08-16
US7655973B2 (en) 2010-02-02
CN102339856B (zh) 2016-02-24
DE112006002913T5 (de) 2008-09-25
CN101300665B (zh) 2011-12-07
WO2007055817A2 (en) 2007-05-18
KR100989772B1 (ko) 2010-10-26
KR20080066742A (ko) 2008-07-16
US20070096203A1 (en) 2007-05-03
US8686494B2 (en) 2014-04-01

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