JP2008543081A5 - - Google Patents

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Publication number
JP2008543081A5
JP2008543081A5 JP2008514682A JP2008514682A JP2008543081A5 JP 2008543081 A5 JP2008543081 A5 JP 2008543081A5 JP 2008514682 A JP2008514682 A JP 2008514682A JP 2008514682 A JP2008514682 A JP 2008514682A JP 2008543081 A5 JP2008543081 A5 JP 2008543081A5
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JP
Japan
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layer
region
semiconductor
insulator
substrate
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JP2008514682A
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English (en)
Japanese (ja)
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JP4959690B2 (ja
JP2008543081A (ja
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Priority claimed from US11/142,646 external-priority patent/US7291539B2/en
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Publication of JP2008543081A5 publication Critical patent/JP2008543081A5/ja
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Expired - Fee Related legal-status Critical Current
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JP2008514682A 2005-06-01 2006-05-18 ハイブリッド配向基板のための改善されたアモルファス化／テンプレート再結晶化の方法 Expired - Fee Related JP4959690B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/142,646 2005-06-01
US11/142,646 US7291539B2 (en) 2005-06-01 2005-06-01 Amorphization/templated recrystallization method for hybrid orientation substrates
PCT/US2006/019417 WO2006130360A2 (en) 2005-06-01 2006-05-18 Improved amorphization/templated recrystallization method for hybrid orientation substrates

Publications (3)

Publication Number Publication Date
JP2008543081A JP2008543081A (ja) 2008-11-27
JP2008543081A5 true JP2008543081A5 (enExample) 2009-02-19
JP4959690B2 JP4959690B2 (ja) 2012-06-27

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JP2008514682A Expired - Fee Related JP4959690B2 (ja) 2005-06-01 2006-05-18 ハイブリッド配向基板のための改善されたアモルファス化／テンプレート再結晶化の方法

Country Status (6)

Country Link
US (5) US7291539B2 (enExample)
EP (1) EP1886342A4 (enExample)
JP (1) JP4959690B2 (enExample)
CN (1) CN101176195B (enExample)
TW (1) TW200710997A (enExample)
WO (1) WO2006130360A2 (enExample)

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CN102569394B (zh) * 2010-12-29 2014-12-03 中芯国际集成电路制造(北京)有限公司 晶体管及其制作方法
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