JP2007513511A5 - - Google Patents

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Publication number
JP2007513511A5
JP2007513511A5 JP2006541942A JP2006541942A JP2007513511A5 JP 2007513511 A5 JP2007513511 A5 JP 2007513511A5 JP 2006541942 A JP2006541942 A JP 2006541942A JP 2006541942 A JP2006541942 A JP 2006541942A JP 2007513511 A5 JP2007513511 A5 JP 2007513511A5
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JP
Japan
Prior art keywords
semiconductor layer
crystalline semiconductor
layer
insulator
substrate
Prior art date
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Granted
Application number
JP2006541942A
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English (en)
Japanese (ja)
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JP4939224B2 (ja
JP2007513511A (ja
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Publication date
Priority claimed from US10/728,519 external-priority patent/US6972247B2/en
Application filed filed Critical
Publication of JP2007513511A publication Critical patent/JP2007513511A/ja
Publication of JP2007513511A5 publication Critical patent/JP2007513511A5/ja
Application granted granted Critical
Publication of JP4939224B2 publication Critical patent/JP4939224B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006541942A 2003-12-05 2004-12-01 半導体基板を作製する方法 Expired - Fee Related JP4939224B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/728,519 2003-12-05
US10/728,519 US6972247B2 (en) 2003-12-05 2003-12-05 Method of fabricating strained Si SOI wafers
PCT/EP2004/053204 WO2005055290A2 (en) 2003-12-05 2004-12-01 Method of fabricating a strained semiconductor-on-insulator substrate

Publications (3)

Publication Number Publication Date
JP2007513511A JP2007513511A (ja) 2007-05-24
JP2007513511A5 true JP2007513511A5 (enExample) 2007-11-22
JP4939224B2 JP4939224B2 (ja) 2012-05-23

Family

ID=34633733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006541942A Expired - Fee Related JP4939224B2 (ja) 2003-12-05 2004-12-01 半導体基板を作製する方法

Country Status (7)

Country Link
US (1) US6972247B2 (enExample)
EP (1) EP1695377A2 (enExample)
JP (1) JP4939224B2 (enExample)
KR (1) KR100940748B1 (enExample)
CN (1) CN100505163C (enExample)
TW (1) TWI313511B (enExample)
WO (1) WO2005055290A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005112129A1 (ja) * 2004-05-13 2005-11-24 Fujitsu Limited 半導体装置およびその製造方法、半導体基板の製造方法
US7488670B2 (en) * 2005-07-13 2009-02-10 Infineon Technologies Ag Direct channel stress
FR2890489B1 (fr) * 2005-09-08 2008-03-07 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant
US8319285B2 (en) 2005-12-22 2012-11-27 Infineon Technologies Ag Silicon-on-insulator chip having multiple crystal orientations
US7560318B2 (en) * 2006-03-13 2009-07-14 Freescale Semiconductor, Inc. Process for forming an electronic device including semiconductor layers having different stresses
CN100431132C (zh) * 2006-03-30 2008-11-05 上海理工大学 一种采用相变方法实现绝缘体上应变硅的制作方法
DE102006030257B4 (de) * 2006-06-30 2010-04-08 Advanced Micro Devices, Inc., Sunnyvale Teststruktur zum Bestimmen der Eigenschaften von Halbleiterlegierungen in SOI-Transistoren mittels Röntgenbeugung
JP4943820B2 (ja) * 2006-11-10 2012-05-30 信越化学工業株式会社 ＧＯＩ（ＧｅｏｎＩｎｓｕｌａｔｏｒ）基板の製造方法
US8603405B2 (en) 2007-03-29 2013-12-10 Npl Associates, Inc. Power units based on dislocation site techniques
US8227020B1 (en) * 2007-03-29 2012-07-24 Npl Associates, Inc. Dislocation site formation techniques
CN101681843B (zh) * 2007-06-20 2012-05-09 株式会社半导体能源研究所 半导体装置的制造方法
KR100868643B1 (ko) * 2007-07-20 2008-11-12 주식회사 동부하이텍 이미지센서 및 그 제조방법
US8329260B2 (en) * 2008-03-11 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Cooled cleaving implant
FR2931293B1 (fr) * 2008-05-15 2010-09-03 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante
US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
JP2011254051A (ja) * 2010-06-04 2011-12-15 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
US8486776B2 (en) 2010-09-21 2013-07-16 International Business Machines Corporation Strained devices, methods of manufacture and design structures
TW201227828A (en) * 2010-12-31 2012-07-01 Bo-Ying Chen Wafers for nanometer process and manufacturing method thereof
US8809168B2 (en) 2011-02-14 2014-08-19 International Business Machines Corporation Growing compressively strained silicon directly on silicon at low temperatures
GB201114365D0 (en) 2011-08-22 2011-10-05 Univ Surrey Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method
FR3003686B1 (fr) * 2013-03-20 2016-11-04 St Microelectronics Crolles 2 Sas Procede de formation d'une couche de silicium contraint
FR3006438B1 (fr) * 2013-06-04 2015-06-26 Commissariat Energie Atomique Capteur de temperature
FR3014244B1 (fr) * 2013-11-29 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede ameliore de realisation d'un substrat semi-conducteur contraint sur isolant
FR3041146B1 (fr) * 2015-09-11 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mise en tension d'un film semi-conducteur
FR3050569B1 (fr) * 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication amelioree de silicium contraint en tension sur isolant par amorphisation puis recristallisation
FR3091619B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de guérison avant transfert d’une couche semi-conductrice
CN116092923B (zh) * 2023-01-16 2025-11-04 湖北九峰山实验室 一种基于碳膜的碳化硅欧姆接触结构及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2345122A1 (en) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and production method thereof, semiconductor device using the same and production method thereof
US6429061B1 (en) * 2000-07-26 2002-08-06 International Business Machines Corporation Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
US6855649B2 (en) * 2001-06-12 2005-02-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030077882A1 (en) * 2001-07-26 2003-04-24 Taiwan Semiconductor Manfacturing Company Method of forming strained-silicon wafer for mobility-enhanced MOSFET device
JP2003158250A (ja) * 2001-10-30 2003-05-30 Sharp Corp ＳｉＧｅ／ＳＯＩのＣＭＯＳおよびその製造方法
US6812114B2 (en) * 2002-04-10 2004-11-02 International Business Machines Corporation Patterned SOI by formation and annihilation of buried oxide regions during processing
US6774015B1 (en) * 2002-12-19 2004-08-10 International Business Machines Corporation Strained silicon-on-insulator (SSOI) and method to form the same
US6825102B1 (en) * 2003-09-18 2004-11-30 International Business Machines Corporation Method of improving the quality of defective semiconductor material

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