JPH0236052B2 - - Google Patents

Info

Publication number
JPH0236052B2
JPH0236052B2 JP59183730A JP18373084A JPH0236052B2 JP H0236052 B2 JPH0236052 B2 JP H0236052B2 JP 59183730 A JP59183730 A JP 59183730A JP 18373084 A JP18373084 A JP 18373084A JP H0236052 B2 JPH0236052 B2 JP H0236052B2
Authority
JP
Japan
Prior art keywords
film
thin film
substrate
sio
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59183730A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6163018A (ja
Inventor
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59183730A priority Critical patent/JPS6163018A/ja
Publication of JPS6163018A publication Critical patent/JPS6163018A/ja
Publication of JPH0236052B2 publication Critical patent/JPH0236052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/382—
    • H10P14/274—
    • H10P14/2905—
    • H10P14/2926—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3802—
    • H10P14/3808—
    • H10P14/3818—

Landscapes

  • Recrystallisation Techniques (AREA)
JP59183730A 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法 Granted JPS6163018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183730A JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183730A JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS6163018A JPS6163018A (ja) 1986-04-01
JPH0236052B2 true JPH0236052B2 (enExample) 1990-08-15

Family

ID=16140962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183730A Granted JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS6163018A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748358B2 (ja) * 1986-07-30 1998-05-06 ソニー株式会社 半導体単結晶薄膜の製造方法
JPH0283915A (ja) * 1988-09-20 1990-03-26 Ricoh Co Ltd 半導体単結晶薄膜の製造方法
CN1131546C (zh) * 1996-01-30 2003-12-17 精工爱普生株式会社 结晶性膜的形成方法
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878455A (ja) * 1981-10-08 1983-05-12 Nec Corp 半導体装置の製造方法
JPS5893222A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法

Also Published As

Publication number Publication date
JPS6163018A (ja) 1986-04-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term