JP2002270509A5 - - Google Patents
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- Publication number
- JP2002270509A5 JP2002270509A5 JP2001394184A JP2001394184A JP2002270509A5 JP 2002270509 A5 JP2002270509 A5 JP 2002270509A5 JP 2001394184 A JP2001394184 A JP 2001394184A JP 2001394184 A JP2001394184 A JP 2001394184A JP 2002270509 A5 JP2002270509 A5 JP 2002270509A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal substrate
- trench
- semiconductor single
- substrate according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 13
- 239000000463 material Substances 0.000 claims 9
- 238000011049 filling Methods 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000005280 amorphization Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0100414A FR2819631B1 (fr) | 2001-01-12 | 2001-01-12 | Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat |
| FR0100414 | 2001-01-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002270509A JP2002270509A (ja) | 2002-09-20 |
| JP2002270509A5 true JP2002270509A5 (enExample) | 2005-07-14 |
Family
ID=8858764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001394184A Pending JP2002270509A (ja) | 2001-01-12 | 2001-12-26 | 単結晶基板の製作方法およびその基板を含む集積回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7060596B2 (enExample) |
| EP (1) | EP1223614B1 (enExample) |
| JP (1) | JP2002270509A (enExample) |
| DE (1) | DE60216646T2 (enExample) |
| FR (1) | FR2819631B1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2819632B1 (fr) * | 2001-01-12 | 2003-09-26 | St Microelectronics Sa | Circuit integre comportant un dispositif analogique de stockage de charges, et procede de fabrication |
| US6784072B2 (en) * | 2002-07-22 | 2004-08-31 | International Business Machines Corporation | Control of buried oxide in SIMOX |
| FR3099964B1 (fr) * | 2019-08-14 | 2024-03-29 | St Microelectronics Crolles 2 Sas | Procédé de réalisation d’une électrode dans un substrat de base et dispositif électronique |
| CN112768509B (zh) * | 2021-02-03 | 2022-07-08 | 杭州中瑞宏芯半导体有限公司 | 一种反向恢复时间短的frd二极管及制备方法 |
| CN117568912B (zh) * | 2023-11-21 | 2024-10-01 | 松山湖材料实验室 | 一种单晶复合衬底及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292365A (ja) * | 1985-10-18 | 1987-04-27 | Fuji Photo Film Co Ltd | 半導体装置およびその製造方法 |
| US4649625A (en) * | 1985-10-21 | 1987-03-17 | International Business Machines Corporation | Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
| JPS62293759A (ja) * | 1986-06-13 | 1987-12-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| US4942554A (en) * | 1987-11-26 | 1990-07-17 | Siemens Aktiengesellschaft | Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same |
| KR100197648B1 (ko) * | 1995-08-26 | 1999-06-15 | 김영환 | 반도체소자의 소자분리 절연막 형성방법 |
| FR2756104B1 (fr) | 1996-11-19 | 1999-01-29 | Sgs Thomson Microelectronics | Fabrication de circuits integres bipolaires/cmos |
| JP3502531B2 (ja) * | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US5891763A (en) * | 1997-10-22 | 1999-04-06 | Wanlass; Frank M. | Damascene pattering of SOI MOS transistors |
| US6001706A (en) * | 1997-12-08 | 1999-12-14 | Chartered Semiconductor Manufacturing, Ltd. | Method for making improved shallow trench isolation for semiconductor integrated circuits |
| US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
| US6214653B1 (en) * | 1999-06-04 | 2001-04-10 | International Business Machines Corporation | Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate |
| FR2819636B1 (fr) * | 2001-01-12 | 2003-09-26 | St Microelectronics Sa | Circuit integre comportant un point memoire de type dram, et procede de fabrication |
-
2001
- 2001-01-12 FR FR0100414A patent/FR2819631B1/fr not_active Expired - Fee Related
- 2001-12-26 JP JP2001394184A patent/JP2002270509A/ja active Pending
-
2002
- 2002-01-09 DE DE60216646T patent/DE60216646T2/de not_active Expired - Lifetime
- 2002-01-09 EP EP02290038A patent/EP1223614B1/fr not_active Expired - Lifetime
- 2002-01-11 US US10/044,402 patent/US7060596B2/en not_active Expired - Fee Related
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