IT1196997B - Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati - Google Patents

Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati

Info

Publication number
IT1196997B
IT1196997B IT21254/86A IT2125486A IT1196997B IT 1196997 B IT1196997 B IT 1196997B IT 21254/86 A IT21254/86 A IT 21254/86A IT 2125486 A IT2125486 A IT 2125486A IT 1196997 B IT1196997 B IT 1196997B
Authority
IT
Italy
Prior art keywords
volatile
self
memory cells
including non
structures including
Prior art date
Application number
IT21254/86A
Other languages
English (en)
Other versions
IT8621254A1 (it
IT8621254A0 (it
Inventor
Franco Maggioni
Carlo Riva
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT21254/86A priority Critical patent/IT1196997B/it
Publication of IT8621254A0 publication Critical patent/IT8621254A0/it
Priority to DE87201211T priority patent/DE3787421T2/de
Priority to EP87201211A priority patent/EP0255159B1/en
Priority to US07/069,183 priority patent/US4780431A/en
Priority to JP62179259A priority patent/JP2520648B2/ja
Publication of IT8621254A1 publication Critical patent/IT8621254A1/it
Application granted granted Critical
Publication of IT1196997B publication Critical patent/IT1196997B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
IT21254/86A 1986-07-25 1986-07-25 Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati IT1196997B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT21254/86A IT1196997B (it) 1986-07-25 1986-07-25 Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati
DE87201211T DE3787421T2 (de) 1986-07-25 1987-06-24 Verfahren zum Herstellen von Strukturen, einschliesslich nichtflüchtiger Speicherzellen vom EEPROM-Typ, mit selbstausrichtenden Siliziumschichten und dazugehörige Transistoren.
EP87201211A EP0255159B1 (en) 1986-07-25 1987-06-24 Process for making structures including e2prom nonvolatile memory cells with self-aligned layers of silicon and associated transistors
US07/069,183 US4780431A (en) 1986-07-25 1987-07-02 Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors
JP62179259A JP2520648B2 (ja) 1986-07-25 1987-07-20 自己整合ケイ素層を有するｅ▲上２▼ｐｒｏｍ不揮発性メモリセルと関連トランジスタを含む構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21254/86A IT1196997B (it) 1986-07-25 1986-07-25 Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati

Publications (3)

Publication Number Publication Date
IT8621254A0 IT8621254A0 (it) 1986-07-25
IT8621254A1 IT8621254A1 (it) 1988-01-25
IT1196997B true IT1196997B (it) 1988-11-25

Family

ID=11179092

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21254/86A IT1196997B (it) 1986-07-25 1986-07-25 Processo per realizzare strutture includenti celle di memoria non volatili e2prom con strati di silicio autoallineate transistori associati

Country Status (5)

Country Link
US (1) US4780431A (it)
EP (1) EP0255159B1 (it)
JP (1) JP2520648B2 (it)
DE (1) DE3787421T2 (it)
IT (1) IT1196997B (it)

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US4980309A (en) * 1987-11-30 1990-12-25 Texas Instruments, Incorporated Method of making high density EEPROM
US5445980A (en) * 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
US4980301A (en) * 1988-12-21 1990-12-25 At&T Bell Laboratories Method for reducing mobile ion contamination in semiconductor integrated circuits
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
DE69227772T2 (de) * 1992-09-30 1999-06-24 St Microelectronics Srl Verfahren zur Herstellung von nichtflüchtigen Speichern und so hergestellte Speicher
EP0591599B1 (en) * 1992-09-30 2001-12-19 STMicroelectronics S.r.l. Method of fabricating integrated devices, and integrated device produced thereby
US5568418A (en) * 1992-09-30 1996-10-22 Sgs-Thomson Microelectronics S.R.L. Non-volatile memory in an integrated circuit
US5604141A (en) * 1994-03-15 1997-02-18 National Semiconductor Corporation Method for forming virtual-ground flash EPROM array with reduced cell pitch in the X direction
US5756385A (en) * 1994-03-30 1998-05-26 Sandisk Corporation Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
KR0138312B1 (ko) * 1994-05-13 1998-04-28 김광호 비휘발성 반도체 메모리장치의 제조방법
US5550072A (en) * 1994-08-30 1996-08-27 National Semiconductor Corporation Method of fabrication of integrated circuit chip containing EEPROM and capacitor
US5894146A (en) * 1995-02-28 1999-04-13 Sgs-Thomson Microelectronics, S.R.L. EEPROM memory cells matrix with double polysilicon level and relating manufacturing process
DE69528816T2 (de) * 1995-02-28 2003-10-23 St Microelectronics Srl EEPROM-Speicherzellenmatrix mit doppelter Polysiliziumebene und Herstellungsverfahren
EP0788168A1 (en) 1996-01-31 1997-08-06 STMicroelectronics S.r.l. Process of fabricating non-volatile floating-gate memory devices, and memory device fabricated thereby
TW347567B (en) * 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
DE69630944D1 (de) * 1996-03-29 2004-01-15 St Microelectronics Srl Hochspannungsfester MOS-Transistor und Verfahren zur Herstellung
DE69630107D1 (de) * 1996-04-15 2003-10-30 St Microelectronics Srl Mit einem EEPROM integrierter FLASH-EPROM
US6330190B1 (en) 1996-05-30 2001-12-11 Hyundai Electronics America Semiconductor structure for flash memory enabling low operating potentials
US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
JPH104149A (ja) * 1996-06-14 1998-01-06 Oki Electric Ind Co Ltd 半導体記憶装置および製造方法
JP2924832B2 (ja) * 1996-11-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
TW360951B (en) * 1997-04-01 1999-06-11 Nxp Bv Method of manufacturing a semiconductor device
JP4068781B2 (ja) 2000-02-28 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置および半導体集積回路装置の製造方法
US8421143B2 (en) 2000-09-26 2013-04-16 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having element isolating region of trench type
JP2002176114A (ja) 2000-09-26 2002-06-21 Toshiba Corp 半導体装置及びその製造方法
JP5072914B2 (ja) * 2000-09-26 2012-11-14 株式会社東芝 半導体装置
KR100487560B1 (ko) * 2003-03-10 2005-05-03 삼성전자주식회사 선택 트랜지스터를 갖는 이이피롬 및 그 제조방법
KR100517560B1 (ko) * 2003-07-14 2005-09-28 삼성전자주식회사 선택트랜지스터를 갖는 이이피롬 소자 및 그 제조방법
JP4377676B2 (ja) * 2003-12-24 2009-12-02 株式会社東芝 半導体装置およびその製造方法
KR100655285B1 (ko) * 2004-11-04 2006-12-08 삼성전자주식회사 적층 게이트를 가지는 반도체 소자 및 그 제조방법
CN110660808B (zh) * 2018-06-28 2022-11-18 无锡华润上华科技有限公司 存储器结构及其制造方法

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Publication number Priority date Publication date Assignee Title
JPS53124084A (en) * 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
DE3037744A1 (de) * 1980-10-06 1982-05-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same
JPS5963763A (ja) * 1982-10-05 1984-04-11 Fujitsu Ltd 半導体装置の製造方法
JPS5974677A (ja) * 1982-10-22 1984-04-27 Ricoh Co Ltd 半導体装置及びその製造方法
JPS59103366A (ja) * 1982-12-03 1984-06-14 Fujitsu Ltd 半導体メモリ素子の製造方法
JPS60189971A (ja) * 1984-03-09 1985-09-27 Toshiba Corp 半導体装置の製造方法
IT1213249B (it) * 1984-11-26 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
JPS62156857A (ja) * 1985-12-28 1987-07-11 Ricoh Co Ltd メモリ素子を含む半導体装置の製造方法
US4735919A (en) * 1986-04-15 1988-04-05 General Electric Company Method of making a floating gate memory cell

Also Published As

Publication number Publication date
IT8621254A1 (it) 1988-01-25
DE3787421D1 (de) 1993-10-21
JPS6334977A (ja) 1988-02-15
IT8621254A0 (it) 1986-07-25
EP0255159A2 (en) 1988-02-03
JP2520648B2 (ja) 1996-07-31
US4780431A (en) 1988-10-25
DE3787421T2 (de) 1994-03-17
EP0255159B1 (en) 1993-09-15
EP0255159A3 (en) 1989-11-15

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730