IT8622373A1 - Cella di memoria EEPROM a singolo livello di polisilicio con zona di ossido di tunnel - Google Patents
Cella di memoria EEPROM a singolo livello di polisilicio con zona di ossido di tunnelInfo
- Publication number
- IT8622373A1 IT8622373A1 IT1986A22373A IT2237386A IT8622373A1 IT 8622373 A1 IT8622373 A1 IT 8622373A1 IT 1986A22373 A IT1986A22373 A IT 1986A22373A IT 2237386 A IT2237386 A IT 2237386A IT 8622373 A1 IT8622373 A1 IT 8622373A1
- Authority
- IT
- Italy
- Prior art keywords
- memory cell
- single layer
- tunnel oxide
- eeprom memory
- layer polysilicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 239000002356 single layer Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22373/86A IT1198109B (it) | 1986-11-18 | 1986-11-18 | Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel |
DE8787202039T DE3780767T2 (de) | 1986-11-18 | 1987-10-23 | Eeprom-speicherzelle mit einer polysiliziumschicht und einer tunneloxidzone. |
EP87202039A EP0268315B1 (en) | 1986-11-18 | 1987-10-23 | Eeprom memory cell with a single polysilicon level and a tunnel oxide zone |
US07/119,498 US4823316A (en) | 1986-11-18 | 1987-11-12 | Eeprom memory cell with a single polysilicon level and a tunnel oxide zone |
JP62288600A JPS63136573A (ja) | 1986-11-18 | 1987-11-17 | 単層ポリシリコン層のトンネル酸化区域を有するeepromメモリセル |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22373/86A IT1198109B (it) | 1986-11-18 | 1986-11-18 | Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8622373A0 IT8622373A0 (it) | 1986-11-18 |
IT8622373A1 true IT8622373A1 (it) | 1988-05-18 |
IT1198109B IT1198109B (it) | 1988-12-21 |
Family
ID=11195385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22373/86A IT1198109B (it) | 1986-11-18 | 1986-11-18 | Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel |
Country Status (5)
Country | Link |
---|---|
US (1) | US4823316A (it) |
EP (1) | EP0268315B1 (it) |
JP (1) | JPS63136573A (it) |
DE (1) | DE3780767T2 (it) |
IT (1) | IT1198109B (it) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02125470A (ja) * | 1988-06-15 | 1990-05-14 | Seiko Instr Inc | 半導体不揮発性メモリ |
US5324677A (en) * | 1988-06-15 | 1994-06-28 | Seiko Instruments Inc. | Method of making memory cell and a peripheral circuit |
KR920001402B1 (ko) * | 1988-11-29 | 1992-02-13 | 삼성전자 주식회사 | 불휘발성 반도체 기억소자 |
IT1228822B (it) * | 1989-03-23 | 1991-07-04 | Sgs Thomson Microelectronics | Cella di riferimento per la lettura di dispositivi di memoria eeprom. |
IT1230363B (it) * | 1989-08-01 | 1991-10-18 | Sgs Thomson Microelectronics | Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella. |
IT1232354B (it) * | 1989-09-04 | 1992-01-28 | Sgs Thomson Microelectronics | Procedimento per la realizzazione di celle di memoria eeprom a singolo livello di polisilicio e ossido sottile utilizzando ossidazione differenziale. |
US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
DE69018832T2 (de) * | 1990-12-31 | 1995-11-23 | Sgs Thomson Microelectronics | EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises. |
US5282161A (en) * | 1990-12-31 | 1994-01-25 | Sgs-Thomson Microelectronics S.R.L. | Eeprom cell having a read interface isolated from the write/erase interface |
IT1252025B (it) * | 1991-11-29 | 1995-05-27 | Sgs Thomson Microelectronics | Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio |
JP3293893B2 (ja) * | 1991-12-09 | 2002-06-17 | 株式会社東芝 | 半導体不揮発性記憶装置の製造方法 |
US5301150A (en) * | 1992-06-22 | 1994-04-05 | Intel Corporation | Flash erasable single poly EPROM device |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
JP2663863B2 (ja) * | 1994-04-19 | 1997-10-15 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
DE776049T1 (de) * | 1995-11-21 | 1998-03-05 | Programmable Microelectronics | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht |
FR2764736B1 (fr) * | 1997-06-17 | 2000-08-11 | Sgs Thomson Microelectronics | Cellule eeprom a un seul niveau de silicium polycristallin et zone tunnel auto-alignee |
US5885871A (en) * | 1997-07-31 | 1999-03-23 | Stmicrolelectronics, Inc. | Method of making EEPROM cell structure |
DE102006024121B4 (de) * | 2006-05-22 | 2011-02-24 | Telefunken Semiconductors Gmbh & Co. Kg | Nichtflüchtige Speicherzelle einer in einem Halbleiterplättchen integrierten Schaltung, Verfahren zu deren Herstellung und Verwendung einer nichtflüchtigen Speicherzelle |
DE102006038936A1 (de) | 2006-08-18 | 2008-02-28 | Atmel Germany Gmbh | Schaltregler, Transceiverschaltung und schlüsselloses Zugangskontrollsystem |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59155968A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 半導体記憶装置 |
EP0133667A3 (en) * | 1983-08-12 | 1987-08-26 | American Microsystems, Incorporated | High coupling ratio dense electrically erasable programmable read-only memory |
FR2562707A1 (fr) * | 1984-04-06 | 1985-10-11 | Efcis | Point-memoire electriquement effacable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
JPS60258968A (ja) * | 1985-05-20 | 1985-12-20 | Agency Of Ind Science & Technol | 浮遊ゲート形不揮発性半導体メモリ |
-
1986
- 1986-11-18 IT IT22373/86A patent/IT1198109B/it active
-
1987
- 1987-10-23 EP EP87202039A patent/EP0268315B1/en not_active Expired
- 1987-10-23 DE DE8787202039T patent/DE3780767T2/de not_active Expired - Fee Related
- 1987-11-12 US US07/119,498 patent/US4823316A/en not_active Expired - Lifetime
- 1987-11-17 JP JP62288600A patent/JPS63136573A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0268315A2 (en) | 1988-05-25 |
DE3780767D1 (de) | 1992-09-03 |
DE3780767T2 (de) | 1993-03-18 |
EP0268315A3 (en) | 1988-12-14 |
IT1198109B (it) | 1988-12-21 |
EP0268315B1 (en) | 1992-07-29 |
IT8622373A0 (it) | 1986-11-18 |
US4823316A (en) | 1989-04-18 |
JPS63136573A (ja) | 1988-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971129 |