IT1252025B - Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio - Google Patents

Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio

Info

Publication number
IT1252025B
IT1252025B ITMI913196A ITMI913196A IT1252025B IT 1252025 B IT1252025 B IT 1252025B IT MI913196 A ITMI913196 A IT MI913196A IT MI913196 A ITMI913196 A IT MI913196A IT 1252025 B IT1252025 B IT 1252025B
Authority
IT
Italy
Prior art keywords
realization
procedure
memory cells
electrically erasable
single level
Prior art date
Application number
ITMI913196A
Other languages
English (en)
Inventor
Paolo Ghezzi
Carlo Riva
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITMI913196A priority Critical patent/IT1252025B/it
Publication of ITMI913196A0 publication Critical patent/ITMI913196A0/it
Priority to DE69217846T priority patent/DE69217846T2/de
Priority to EP92118573A priority patent/EP0545074B1/en
Priority to US07/983,799 priority patent/US5367483A/en
Priority to JP4318539A priority patent/JPH06196662A/ja
Publication of ITMI913196A1 publication Critical patent/ITMI913196A1/it
Priority to US08/310,836 priority patent/US5553017A/en
Application granted granted Critical
Publication of IT1252025B publication Critical patent/IT1252025B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio la cui peculiarità consiste nel fatto di sfruttare uno strato sacrificale di ossido di silicio per realizzare uno strato di ossido di silicio su area attiva di elevato spessore e di proteggere l'area attiva della cella dell'impianto pesante di source e drain per migliorare l'affidabilità.
ITMI913196A 1991-11-29 1991-11-29 Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio IT1252025B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITMI913196A IT1252025B (it) 1991-11-29 1991-11-29 Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio
DE69217846T DE69217846T2 (de) 1991-11-29 1992-10-30 Verfahren zur Herstellung elektrisch-löschbarer und -programmierbarer Nurlesespeicherzellen mit einer einzigen Polysiliziumschicht
EP92118573A EP0545074B1 (en) 1991-11-29 1992-10-30 Method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level
US07/983,799 US5367483A (en) 1991-11-29 1992-11-24 Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
JP4318539A JPH06196662A (ja) 1991-11-29 1992-11-27 同一のポリシリコンレベルを有する電気的消去書込み可能な読み出し専用メモリセルの製造方法
US08/310,836 US5553017A (en) 1991-11-29 1994-09-22 Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI913196A IT1252025B (it) 1991-11-29 1991-11-29 Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio

Publications (3)

Publication Number Publication Date
ITMI913196A0 ITMI913196A0 (it) 1991-11-29
ITMI913196A1 ITMI913196A1 (it) 1993-05-29
IT1252025B true IT1252025B (it) 1995-05-27

Family

ID=11361219

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI913196A IT1252025B (it) 1991-11-29 1991-11-29 Procedimento per la realizzazione di celle di memoria a sola lettura programmabili e cancellabili elettricamente a singolo livello di polisilicio

Country Status (5)

Country Link
US (2) US5367483A (it)
EP (1) EP0545074B1 (it)
JP (1) JPH06196662A (it)
DE (1) DE69217846T2 (it)
IT (1) IT1252025B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3228230B2 (ja) * 1998-07-21 2001-11-12 日本電気株式会社 半導体装置の製造方法
US6143608A (en) * 1999-03-31 2000-11-07 Advanced Micro Devices, Inc. Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation
US6753590B2 (en) * 2002-07-08 2004-06-22 International Business Machines Corporation High impedance antifuse
US20200091561A1 (en) * 2018-09-17 2020-03-19 ZAF Energy Systems, Incorporated Zinc alkaline secondary battery including anchored electrolyte additives

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS57155769A (en) * 1981-03-20 1982-09-25 Fujitsu Ltd Manufacture of semiconductor device
IT1191558B (it) * 1986-04-21 1988-03-23 Sgs Microelettronica Spa Dispositivo a semiconduttore integrato di tipo mos con spessore dell'ossido di porta non uniforme e procedimento di fabbricazione dello stesso
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
JPS63144559A (ja) * 1986-12-09 1988-06-16 Toshiba Corp 半導体集積回路
JPH03107543A (ja) * 1989-09-20 1991-05-07 Nippondenso Co Ltd 燃料噴射時期調整装置
US5254489A (en) * 1990-10-18 1993-10-19 Nec Corporation Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation
US5355332A (en) * 1990-10-23 1994-10-11 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with an array of one-transistor memory cells

Also Published As

Publication number Publication date
DE69217846D1 (de) 1997-04-10
ITMI913196A0 (it) 1991-11-29
JPH06196662A (ja) 1994-07-15
US5367483A (en) 1994-11-22
EP0545074B1 (en) 1997-03-05
EP0545074A2 (en) 1993-06-09
ITMI913196A1 (it) 1993-05-29
US5553017A (en) 1996-09-03
EP0545074A3 (en) 1993-08-18
DE69217846T2 (de) 1997-06-12

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129