DE3851479T2 - Speicherzelle einer nichtflüchtigen Halbleiter-Speicheranordnung. - Google Patents

Speicherzelle einer nichtflüchtigen Halbleiter-Speicheranordnung.

Info

Publication number
DE3851479T2
DE3851479T2 DE3851479T DE3851479T DE3851479T2 DE 3851479 T2 DE3851479 T2 DE 3851479T2 DE 3851479 T DE3851479 T DE 3851479T DE 3851479 T DE3851479 T DE 3851479T DE 3851479 T2 DE3851479 T2 DE 3851479T2
Authority
DE
Germany
Prior art keywords
volatile semiconductor
memory cell
memory device
semiconductor memory
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3851479T
Other languages
English (en)
Other versions
DE3851479D1 (de
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16162587A external-priority patent/JP2664682B2/ja
Priority claimed from JP16302387A external-priority patent/JP2537236B2/ja
Priority claimed from JP32568687A external-priority patent/JP2671263B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3851479D1 publication Critical patent/DE3851479D1/de
Application granted granted Critical
Publication of DE3851479T2 publication Critical patent/DE3851479T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
DE3851479T 1987-06-29 1988-06-29 Speicherzelle einer nichtflüchtigen Halbleiter-Speicheranordnung. Expired - Lifetime DE3851479T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16162587A JP2664682B2 (ja) 1987-06-29 1987-06-29 不揮発性半導体記置装置
JP16302387A JP2537236B2 (ja) 1987-06-30 1987-06-30 不揮発性半導体メモリ
JP32568687A JP2671263B2 (ja) 1987-12-23 1987-12-23 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
DE3851479D1 DE3851479D1 (de) 1994-10-20
DE3851479T2 true DE3851479T2 (de) 1995-02-09

Family

ID=27321892

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3855735T Expired - Lifetime DE3855735T2 (de) 1987-06-29 1988-06-29 Nichtflüchtige Halbleiterspeicheranordnung
DE3851479T Expired - Lifetime DE3851479T2 (de) 1987-06-29 1988-06-29 Speicherzelle einer nichtflüchtigen Halbleiter-Speicheranordnung.
DE3855736T Expired - Lifetime DE3855736T2 (de) 1987-06-29 1988-06-29 Nichtflüchtige Halbleiter-Speicheranordnung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3855735T Expired - Lifetime DE3855735T2 (de) 1987-06-29 1988-06-29 Nichtflüchtige Halbleiterspeicheranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3855736T Expired - Lifetime DE3855736T2 (de) 1987-06-29 1988-06-29 Nichtflüchtige Halbleiter-Speicheranordnung

Country Status (3)

Country Link
US (2) US5008856A (de)
EP (3) EP0551926B1 (de)
DE (3) DE3855735T2 (de)

Families Citing this family (43)

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US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5448517A (en) 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
DE3831538C2 (de) * 1987-09-18 1996-03-28 Toshiba Kawasaki Kk Elektrisch löschbare und programmierbare Halbleiter-Speichervorrichtung
JP2728679B2 (ja) * 1988-06-27 1998-03-18 株式会社東芝 不揮発性半導体メモリ装置
JP2718716B2 (ja) * 1988-09-30 1998-02-25 株式会社東芝 不揮発性半導体メモリ装置およびそのデータ書替え方法
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
US5179427A (en) * 1989-06-13 1993-01-12 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with voltage stabilizing electrode
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
US5170373A (en) * 1989-10-31 1992-12-08 Sgs-Thomson Microelectronics, Inc. Three transistor eeprom cell
JPH03283200A (ja) * 1990-03-30 1991-12-13 Toshiba Corp 不揮発性半導体記憶装置及びこれに用いられるメモリセルトランジスタのしきい値電圧の測定方法
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
JPH04212472A (ja) * 1990-07-13 1992-08-04 Toshiba Corp 不揮発性半導体記憶装置の製造方法
JP2586187B2 (ja) * 1990-07-16 1997-02-26 日本電気株式会社 半導体記憶装置
US5227652A (en) * 1990-08-21 1993-07-13 U.S. Philips Corp. Electrically programmable and erasable semiconductor memory and method of operating same
US5124951A (en) * 1990-09-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with sequenced latched row line repeaters
US5119340A (en) * 1990-09-26 1992-06-02 Sgs-Thomson Microelectronics, Inc. Semiconductor memory having latched repeaters for memory row line selection
US5128897A (en) * 1990-09-26 1992-07-07 Sgs-Thomson Microelectronics, Inc. Semiconductor memory having improved latched repeaters for memory row line selection
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP3204666B2 (ja) * 1990-11-21 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
WO1993012525A1 (en) * 1991-12-09 1993-06-24 Fujitsu Limited Flash memory improved in erasing characteristic, and circuit therefor
US5327378A (en) * 1992-03-04 1994-07-05 Waferscale Integration, Inc. Easily manufacturable compact EPROM
JP3204799B2 (ja) * 1993-04-28 2001-09-04 株式会社東芝 半導体メモリ装置
JP3512833B2 (ja) * 1993-09-17 2004-03-31 株式会社東芝 不揮発性半導体記憶装置
JP3683915B2 (ja) * 1993-09-24 2005-08-17 株式会社東芝 半導体記憶装置
DE69326154T2 (de) * 1993-11-30 2000-02-24 St Microelectronics Srl Integrierte Schaltung für die Programmierung einer Speicherzelle eines nicht flüchtigen Speicherregisters
US5578515A (en) * 1995-11-06 1996-11-26 Hughes Aircraft Company Method for fabricating gate structure for nonvolatile memory device comprising an EEPROM and a latch transistor
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6014331A (en) * 1998-08-27 2000-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit for programming a programmable memory cell
US6355522B1 (en) 1998-12-04 2002-03-12 Advanced Micro Devices, Inc. Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices
US6380029B1 (en) 1998-12-04 2002-04-30 Advanced Micro Devices, Inc. Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices
DE19946884A1 (de) * 1999-09-30 2001-04-12 Micronas Gmbh Eprom-Struktur für Halbleiterspeicher
US6180454B1 (en) 1999-10-29 2001-01-30 Advanced Micro Devices, Inc. Method for forming flash memory devices
WO2002001574A1 (fr) * 2000-06-29 2002-01-03 Fujitsu Limited Memoire a semi-conducteurs
US6512694B2 (en) 2001-03-16 2003-01-28 Simtek Corporation NAND stack EEPROM with random programming capability
US6414873B1 (en) 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
US7554840B2 (en) * 2006-05-22 2009-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication thereof
US7440335B2 (en) * 2006-05-23 2008-10-21 Freescale Semiconductor, Inc. Contention-free hierarchical bit line in embedded memory and method thereof
US20080151654A1 (en) 2006-12-22 2008-06-26 Allan James D Method and apparatus to implement a reset function in a non-volatile static random access memory

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
JPS52130536A (en) * 1976-04-26 1977-11-01 Toshiba Corp Semiconductor memory unit
JPS608559B2 (ja) * 1977-05-30 1985-03-04 日本電気株式会社 不揮発性半導体記憶装置
US4233526A (en) * 1977-04-08 1980-11-11 Nippon Electric Co., Ltd. Semiconductor memory device having multi-gate transistors
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4467453A (en) * 1979-09-04 1984-08-21 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
EP0214705B1 (de) * 1980-10-15 1992-01-15 Kabushiki Kaisha Toshiba Halbleiterspeicher mit Datenprogrammierzeit
JPS5771587A (en) * 1980-10-22 1982-05-04 Toshiba Corp Semiconductor storing device
JPS57109190A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Semiconductor storage device and its manufacture
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
JPS60182162A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
EP0160720B1 (de) * 1984-05-07 1988-01-07 Deutsche ITT Industries GmbH Halbleiterspeicherzelle mit einem potentialmässig schwebenden Speichergate
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure

Also Published As

Publication number Publication date
EP0551926A1 (de) 1993-07-21
EP0545904B1 (de) 1997-01-02
DE3851479D1 (de) 1994-10-20
EP0551926B1 (de) 1997-01-02
US5008856A (en) 1991-04-16
US5148394A (en) 1992-09-15
EP0297540A3 (de) 1991-09-11
EP0297540A2 (de) 1989-01-04
EP0545904A2 (de) 1993-06-09
DE3855736D1 (de) 1997-02-13
DE3855735T2 (de) 1997-07-17
DE3855735D1 (de) 1997-02-13
EP0545904A3 (en) 1993-07-21
DE3855736T2 (de) 1997-07-10
EP0297540B1 (de) 1994-09-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)