DE3570018D1 - Semiconductor device comprising a non-volatile storage transistor - Google Patents

Semiconductor device comprising a non-volatile storage transistor

Info

Publication number
DE3570018D1
DE3570018D1 DE8585200991T DE3570018T DE3570018D1 DE 3570018 D1 DE3570018 D1 DE 3570018D1 DE 8585200991 T DE8585200991 T DE 8585200991T DE 3570018 T DE3570018 T DE 3570018T DE 3570018 D1 DE3570018 D1 DE 3570018D1
Authority
DE
Germany
Prior art keywords
semiconductor device
volatile storage
storage transistor
transistor
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585200991T
Other languages
English (en)
Inventor
Cornelis Dietwin Hartgring
Johannes Jozef Maria Joosten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3570018D1 publication Critical patent/DE3570018D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE8585200991T 1984-06-27 1985-06-21 Semiconductor device comprising a non-volatile storage transistor Expired DE3570018D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8402023A NL8402023A (nl) 1984-06-27 1984-06-27 Halfgeleiderinrichting met een niet-vluchtige geheugentransistor.

Publications (1)

Publication Number Publication Date
DE3570018D1 true DE3570018D1 (de) 1989-06-08

Family

ID=19844132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585200991T Expired DE3570018D1 (de) 1984-06-27 1985-06-21 Semiconductor device comprising a non-volatile storage transistor

Country Status (5)

Country Link
US (1) US4709255A (de)
EP (1) EP0169595B1 (de)
JP (1) JPS6114766A (de)
DE (1) DE3570018D1 (de)
NL (1) NL8402023A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2534660B2 (ja) * 1986-03-06 1996-09-18 日本電気株式会社 不揮発性半導体記憶装置の製造方法
CN1007680B (zh) * 1986-04-01 1990-04-18 得克萨斯仪器公司 在多晶硅上具有平滑界面的集成电路
JPS6384168A (ja) * 1986-09-29 1988-04-14 Toshiba Corp 不揮発性半導体記憶装置
JPS63316476A (ja) * 1987-06-18 1988-12-23 Seiko Instr & Electronics Ltd 半導体装置およびその製造方法
DE3883762D1 (de) * 1988-09-30 1993-10-07 Siemens Ag Selbstkalibrierender A/D- und D/A-Wandler.
US8638248B2 (en) 2011-10-07 2014-01-28 Nxp, B.V. Input-independent self-calibration method and apparatus for successive approximation analog-to-digital converter with charge-redistribution digital to analog converter
CN105518865A (zh) * 2013-08-28 2016-04-20 三菱电机株式会社 半导体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
JPS5854675A (ja) * 1981-09-28 1983-03-31 Fujitsu Ltd 半導体記憶装置
JPS58114459A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 半導体不揮発性記憶装置
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
JPS5963763A (ja) * 1982-10-05 1984-04-11 Fujitsu Ltd 半導体装置の製造方法
US4590504A (en) * 1982-12-28 1986-05-20 Thomson Components - Mostek Corporation Nonvolatile MOS memory cell with tunneling element

Also Published As

Publication number Publication date
EP0169595B1 (de) 1989-05-03
JPS6114766A (ja) 1986-01-22
JPH0569314B2 (de) 1993-09-30
EP0169595A1 (de) 1986-01-29
US4709255A (en) 1987-11-24
NL8402023A (nl) 1986-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee