NL8402023A - Halfgeleiderinrichting met een niet-vluchtige geheugentransistor. - Google Patents
Halfgeleiderinrichting met een niet-vluchtige geheugentransistor. Download PDFInfo
- Publication number
- NL8402023A NL8402023A NL8402023A NL8402023A NL8402023A NL 8402023 A NL8402023 A NL 8402023A NL 8402023 A NL8402023 A NL 8402023A NL 8402023 A NL8402023 A NL 8402023A NL 8402023 A NL8402023 A NL 8402023A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor
- region
- insulating layer
- conductive layer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 163
- 230000015654 memory Effects 0.000 title claims description 92
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010902 straw Substances 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 4
- 238000011282 treatment Methods 0.000 description 19
- 238000002513 implantation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 boron ions Chemical class 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8402023A NL8402023A (nl) | 1984-06-27 | 1984-06-27 | Halfgeleiderinrichting met een niet-vluchtige geheugentransistor. |
| EP85200991A EP0169595B1 (de) | 1984-06-27 | 1985-06-21 | Eine einen nichtflüchtigen Speichertransistor enthaltende Halbleiteranordnung |
| DE8585200991T DE3570018D1 (de) | 1984-06-27 | 1985-06-21 | Semiconductor device comprising a non-volatile storage transistor |
| JP60139200A JPS6114766A (ja) | 1984-06-27 | 1985-06-27 | 半導体装置 |
| US06/934,884 US4709255A (en) | 1984-06-27 | 1986-11-25 | Semiconductor device comprising a non-volatile storage transistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8402023 | 1984-06-27 | ||
| NL8402023A NL8402023A (nl) | 1984-06-27 | 1984-06-27 | Halfgeleiderinrichting met een niet-vluchtige geheugentransistor. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8402023A true NL8402023A (nl) | 1986-01-16 |
Family
ID=19844132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8402023A NL8402023A (nl) | 1984-06-27 | 1984-06-27 | Halfgeleiderinrichting met een niet-vluchtige geheugentransistor. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4709255A (de) |
| EP (1) | EP0169595B1 (de) |
| JP (1) | JPS6114766A (de) |
| DE (1) | DE3570018D1 (de) |
| NL (1) | NL8402023A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2534660B2 (ja) * | 1986-03-06 | 1996-09-18 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP2632839B2 (ja) * | 1986-04-01 | 1997-07-23 | テキサス インスツルメンツ インコ−ポレイテツド | 集積回路の製造方法 |
| JPS6384168A (ja) * | 1986-09-29 | 1988-04-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JPS63316476A (ja) * | 1987-06-18 | 1988-12-23 | Seiko Instr & Electronics Ltd | 半導体装置およびその製造方法 |
| DE3883762D1 (de) * | 1988-09-30 | 1993-10-07 | Siemens Ag | Selbstkalibrierender A/D- und D/A-Wandler. |
| US8638248B2 (en) | 2011-10-07 | 2014-01-28 | Nxp, B.V. | Input-independent self-calibration method and apparatus for successive approximation analog-to-digital converter with charge-redistribution digital to analog converter |
| WO2015029159A1 (ja) * | 2013-08-28 | 2015-03-05 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
| CH631287A5 (fr) * | 1979-03-14 | 1982-07-30 | Centre Electron Horloger | Element de memoire non-volatile, electriquement reprogrammable. |
| JPS5854675A (ja) * | 1981-09-28 | 1983-03-31 | Fujitsu Ltd | 半導体記憶装置 |
| US4477825A (en) * | 1981-12-28 | 1984-10-16 | National Semiconductor Corporation | Electrically programmable and erasable memory cell |
| JPS58114459A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
| JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
| JPS5963763A (ja) * | 1982-10-05 | 1984-04-11 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4590504A (en) * | 1982-12-28 | 1986-05-20 | Thomson Components - Mostek Corporation | Nonvolatile MOS memory cell with tunneling element |
-
1984
- 1984-06-27 NL NL8402023A patent/NL8402023A/nl not_active Application Discontinuation
-
1985
- 1985-06-21 EP EP85200991A patent/EP0169595B1/de not_active Expired
- 1985-06-21 DE DE8585200991T patent/DE3570018D1/de not_active Expired
- 1985-06-27 JP JP60139200A patent/JPS6114766A/ja active Granted
-
1986
- 1986-11-25 US US06/934,884 patent/US4709255A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0169595A1 (de) | 1986-01-29 |
| JPH0569314B2 (de) | 1993-09-30 |
| EP0169595B1 (de) | 1989-05-03 |
| JPS6114766A (ja) | 1986-01-22 |
| DE3570018D1 (de) | 1989-06-08 |
| US4709255A (en) | 1987-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |