GB8726334D0 - Single-poly eeprom cell - Google Patents

Single-poly eeprom cell

Info

Publication number
GB8726334D0
GB8726334D0 GB878726334A GB8726334A GB8726334D0 GB 8726334 D0 GB8726334 D0 GB 8726334D0 GB 878726334 A GB878726334 A GB 878726334A GB 8726334 A GB8726334 A GB 8726334A GB 8726334 D0 GB8726334 D0 GB 8726334D0
Authority
GB
United Kingdom
Prior art keywords
eeprom cell
poly eeprom
poly
cell
eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878726334A
Other versions
GB2199184A (en
GB2199184B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of GB8726334D0 publication Critical patent/GB8726334D0/en
Publication of GB2199184A publication Critical patent/GB2199184A/en
Application granted granted Critical
Publication of GB2199184B publication Critical patent/GB2199184B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer
GB8726334A 1986-12-19 1987-11-10 High reliability single-poly eeprom cell Expired - Fee Related GB2199184B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94437886A 1986-12-19 1986-12-19

Publications (3)

Publication Number Publication Date
GB8726334D0 true GB8726334D0 (en) 1987-12-16
GB2199184A GB2199184A (en) 1988-06-29
GB2199184B GB2199184B (en) 1990-01-31

Family

ID=25481282

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8726334A Expired - Fee Related GB2199184B (en) 1986-12-19 1987-11-10 High reliability single-poly eeprom cell

Country Status (3)

Country Link
JP (1) JPS63156361A (en)
DE (1) DE3741937A1 (en)
GB (1) GB2199184B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138575A (en) * 1988-12-19 1992-08-11 Fujitsu Limited Electricaly erasable and programmable read only memory with a discharge device
JPH03206661A (en) * 1990-01-09 1991-09-10 Fujitsu Ltd Semiconductor device
JP2933090B2 (en) * 1990-04-25 1999-08-09 富士通株式会社 Nonvolatile semiconductor memory device
US5301150A (en) * 1992-06-22 1994-04-05 Intel Corporation Flash erasable single poly EPROM device
US5742542A (en) * 1995-07-03 1998-04-21 Advanced Micro Devices, Inc. Non-volatile memory cells using only positive charge to store data
JP3183326B2 (en) * 1996-07-17 2001-07-09 日本電気株式会社 Read-only semiconductor memory device
US6469919B1 (en) 1999-07-22 2002-10-22 Eni Technology, Inc. Power supplies having protection circuits
US7180758B2 (en) 1999-07-22 2007-02-20 Mks Instruments, Inc. Class E amplifier with inductive clamp
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8344801B2 (en) 2010-04-02 2013-01-01 Mks Instruments, Inc. Variable class characteristic amplifier
JP5859873B2 (en) * 2012-02-22 2016-02-16 セイコーインスツル株式会社 Semiconductor nonvolatile memory device

Also Published As

Publication number Publication date
JPS63156361A (en) 1988-06-29
DE3741937A1 (en) 1988-06-30
GB2199184A (en) 1988-06-29
GB2199184B (en) 1990-01-31

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19951110