DE3586766D1 - Nichtfluechtige halbleiterspeicherzelle. - Google Patents
Nichtfluechtige halbleiterspeicherzelle.Info
- Publication number
- DE3586766D1 DE3586766D1 DE8585109848T DE3586766T DE3586766D1 DE 3586766 D1 DE3586766 D1 DE 3586766D1 DE 8585109848 T DE8585109848 T DE 8585109848T DE 3586766 T DE3586766 T DE 3586766T DE 3586766 D1 DE3586766 D1 DE 3586766D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- semiconductor memory
- volatile semiconductor
- volatile
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Supply Devices, Intensifiers, Converters, And Telemotors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65517584A | 1984-09-27 | 1984-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3586766D1 true DE3586766D1 (de) | 1992-11-26 |
DE3586766T2 DE3586766T2 (de) | 1993-04-22 |
Family
ID=24627830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585109848T Expired - Fee Related DE3586766T2 (de) | 1984-09-27 | 1985-08-06 | Nichtfluechtige halbleiterspeicherzelle. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5208772A (de) |
EP (1) | EP0175894B1 (de) |
JP (2) | JPS6180866A (de) |
DE (1) | DE3586766T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748525A (en) * | 1993-10-15 | 1998-05-05 | Advanced Micro Devices, Inc. | Array cell circuit with split read/write line |
US8235844B2 (en) | 2010-06-01 | 2012-08-07 | Adams Golf Ip, Lp | Hollow golf club head |
US7154779B2 (en) * | 2004-01-21 | 2006-12-26 | Sandisk Corporation | Non-volatile memory cell using high-k material inter-gate programming |
US20070281082A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Flash Heating in Atomic Layer Deposition |
US20070277735A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20070281105A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US20100024732A1 (en) * | 2006-06-02 | 2010-02-04 | Nima Mokhlesi | Systems for Flash Heating in Atomic Layer Deposition |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3906296A (en) * | 1969-08-11 | 1975-09-16 | Nasa | Stored charge transistor |
US3825946A (en) * | 1971-01-15 | 1974-07-23 | Intel Corp | Electrically alterable floating gate device and method for altering same |
JPS4853176A (de) * | 1971-11-08 | 1973-07-26 | ||
US3972059A (en) * | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
JPS5139372A (ja) * | 1974-09-30 | 1976-04-01 | Yamatake Honeywell Co Ltd | Kukishikienzankiko |
US4119995A (en) * | 1976-08-23 | 1978-10-10 | Intel Corporation | Electrically programmable and electrically erasable MOS memory cell |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
US4314265A (en) * | 1979-01-24 | 1982-02-02 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
IT1224062B (it) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
DE3013303C2 (de) * | 1980-04-05 | 1984-10-04 | Eltro GmbH, Gesellschaft für Strahlungstechnik, 6900 Heidelberg | Hybridlaser |
US4334292A (en) * | 1980-05-27 | 1982-06-08 | International Business Machines Corp. | Low voltage electrically erasable programmable read only memory |
US4336603A (en) * | 1980-06-18 | 1982-06-22 | International Business Machines Corp. | Three terminal electrically erasable programmable read only memory |
US4380057A (en) * | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
US4375085A (en) * | 1981-01-02 | 1983-02-22 | International Business Machines Corporation | Dense electrically alterable read only memory |
US4432072A (en) * | 1981-12-31 | 1984-02-14 | International Business Machines Corporation | Non-volatile dynamic RAM cell |
US4449205A (en) * | 1982-02-19 | 1984-05-15 | International Business Machines Corp. | Dynamic RAM with non-volatile back-up storage and method of operation thereof |
-
1985
- 1985-06-12 JP JP60126410A patent/JPS6180866A/ja active Granted
- 1985-08-06 DE DE8585109848T patent/DE3586766T2/de not_active Expired - Fee Related
- 1985-08-06 EP EP85109848A patent/EP0175894B1/de not_active Expired
- 1985-09-26 JP JP60211208A patent/JPS6182004A/ja active Granted
-
1986
- 1986-05-28 US US06/869,469 patent/US5208772A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0463241B2 (de) | 1992-10-09 |
EP0175894B1 (de) | 1992-10-21 |
JPS6180866A (ja) | 1986-04-24 |
EP0175894A3 (en) | 1987-10-14 |
US5208772A (en) | 1993-05-04 |
EP0175894A2 (de) | 1986-04-02 |
DE3586766T2 (de) | 1993-04-22 |
JPS6182004A (ja) | 1986-04-25 |
JPH0342703B2 (de) | 1991-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |