DE3176699D1 - Non-volatile semiconductor memory cell - Google Patents

Non-volatile semiconductor memory cell

Info

Publication number
DE3176699D1
DE3176699D1 DE8181106437T DE3176699T DE3176699D1 DE 3176699 D1 DE3176699 D1 DE 3176699D1 DE 8181106437 T DE8181106437 T DE 8181106437T DE 3176699 T DE3176699 T DE 3176699T DE 3176699 D1 DE3176699 D1 DE 3176699D1
Authority
DE
Germany
Prior art keywords
memory cell
semiconductor memory
volatile semiconductor
volatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181106437T
Other languages
English (en)
Inventor
Claude Louis Bertin
Harish Narandas Kotecha
Francis Walter Wiedman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3176699D1 publication Critical patent/DE3176699D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/682—Floating-gate IGFETs having only two programming levels programmed by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE8181106437T 1980-09-30 1981-08-19 Non-volatile semiconductor memory cell Expired DE3176699D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/192,579 US4388704A (en) 1980-09-30 1980-09-30 Non-volatile RAM cell with enhanced conduction insulators

Publications (1)

Publication Number Publication Date
DE3176699D1 true DE3176699D1 (de) 1988-05-05

Family

ID=22710256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181106437T Expired DE3176699D1 (de) 1980-09-30 1981-08-19 Non-volatile semiconductor memory cell

Country Status (4)

Country Link
US (1) US4388704A (de)
EP (1) EP0048814B1 (de)
JP (1) JPS5858759B2 (de)
DE (1) DE3176699D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380057A (en) * 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4939559A (en) * 1981-12-14 1990-07-03 International Business Machines Corporation Dual electron injector structures using a conductive oxide between injectors
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
US4420821A (en) * 1982-02-19 1983-12-13 International Business Machines Corporation Static RAM with non-volatile back-up storage and method of operation thereof
US4527255A (en) * 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
IT1212765B (it) * 1983-07-27 1989-11-30 Ates Componenti Elettron Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.
IT1215224B (it) * 1983-08-04 1990-01-31 Ates Componenti Elettron Microcalcolatore a struttura integrata munito di memoria ram non volatile.
JPS60151898A (ja) * 1984-01-18 1985-08-09 Nec Corp 不揮発性ランダムアクセスメモリセル
US4571704A (en) * 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch
US4729115A (en) * 1984-09-27 1988-03-01 International Business Machines Corporation Non-volatile dynamic random access memory cell
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
NL8501631A (nl) * 1985-06-06 1987-01-02 Philips Nv Niet vluchtige, programmeerbare, statische geheugencel en een niet vluchtig, programmeerbaar statisch geheugen.
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
JPS62256296A (ja) * 1986-04-30 1987-11-07 Fujitsu Ltd 半導体不揮発性記憶装置
JPH0223898U (de) * 1988-07-31 1990-02-16
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
US5353248A (en) * 1992-04-14 1994-10-04 Altera Corporation EEPROM-backed FIFO memory
US5452246A (en) * 1993-06-02 1995-09-19 Fujitsu Limited Static semiconductor memory device adapted for stabilization of low-voltage operation and reduction in cell size
US5781031A (en) * 1995-11-21 1998-07-14 International Business Machines Corporation Programmable logic array
DE19937682C2 (de) * 1999-08-10 2002-03-14 Kostal Leopold Gmbh & Co Kg Elektrische Schaltungsanordnung
US8014200B2 (en) * 2008-04-08 2011-09-06 Zeno Semiconductor, Inc. Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3651492A (en) * 1970-11-02 1972-03-21 Ncr Co Nonvolatile memory cell
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
JPS5228824A (en) * 1975-08-29 1977-03-04 Toshiba Corp Multiple storage unit
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell
US4175290A (en) * 1977-07-28 1979-11-20 Hughes Aircraft Company Integrated semiconductor memory array having improved logic latch circuitry
US4103348A (en) * 1977-08-29 1978-07-25 Westinghouse Electric Corp. Volatile and nonvolatile random access memory cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4207615A (en) * 1978-11-17 1980-06-10 Intel Corporation Non-volatile ram cell
GB2042296B (en) * 1979-01-24 1983-05-11 Xicor Inc Nonvolatile static random access/memory device
US4217601A (en) * 1979-02-15 1980-08-12 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
DE2918888C2 (de) * 1979-05-10 1984-10-18 Siemens AG, 1000 Berlin und 8000 München MNOS-Speicherzelle und Verfahren zu ihrem Betrieb sowie zu ihrer Herstellung

Also Published As

Publication number Publication date
US4388704A (en) 1983-06-14
EP0048814A3 (en) 1983-08-17
JPS5764390A (en) 1982-04-19
JPS5858759B2 (ja) 1983-12-27
EP0048814A2 (de) 1982-04-07
EP0048814B1 (de) 1988-03-30

Similar Documents

Publication Publication Date Title
DE3176699D1 (de) Non-volatile semiconductor memory cell
DE3174621D1 (de) Non-volatile, programmable integrated semiconductor memory cell
DE3174858D1 (en) Nonvolatile semiconductor memory device
GB2078458B (en) Semiconductor memory array
DE3177169D1 (de) Halbleiterspeicheranordnung.
KR880014861A (ko) 반도체 기억장치
JPS5752171A (en) Electrically changeable non-volatile semiconductor memory cell
DE3382212D1 (de) Halbleiterspeicher.
DE3885408D1 (de) Nichtflüchtige Speicherzelle.
IT1161895B (it) Memoria a semiconduttori
KR860001484A (ko) 반도체 기억장치
DE3381545D1 (de) Halbleiterspeicheranordnung.
DE3576013D1 (de) Nichtfluechtiger halbleiterspeicher.
GB2089612B (en) Nonvolatile semiconductor memory device
DE3381723D1 (de) Halbleiterspeicheranordnung.
DE3176549D1 (en) Nonvolatile semiconductor memory device
DE3583669D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3586493D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3176927D1 (en) Integrated semiconductor memory matrix using one-fet cells
IT1153668B (it) Organizzazione di memoria di controllo
DE3382555D1 (de) Halbleiterspeicheranordnung.
DE3381622D1 (de) Halbleiter-speicheranordnung.
DE3174565D1 (de) Non-volatile static semiconductor memory cell
NL192066B (nl) Niet-vluchtige halfgeleidergeheugencel.
IT8222819A0 (it) Dispositivo di memoria nonvolatile.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee