JP2006186346A5 - - Google Patents

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Publication number
JP2006186346A5
JP2006186346A5 JP2005347517A JP2005347517A JP2006186346A5 JP 2006186346 A5 JP2006186346 A5 JP 2006186346A5 JP 2005347517 A JP2005347517 A JP 2005347517A JP 2005347517 A JP2005347517 A JP 2005347517A JP 2006186346 A5 JP2006186346 A5 JP 2006186346A5
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JP
Japan
Prior art keywords
memory
conductive layer
semiconductor device
organic
layer
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JP2005347517A
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English (en)
Japanese (ja)
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JP4954537B2 (ja
JP2006186346A (ja
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Priority to JP2005347517A priority Critical patent/JP4954537B2/ja
Priority claimed from JP2005347517A external-priority patent/JP4954537B2/ja
Publication of JP2006186346A publication Critical patent/JP2006186346A/ja
Publication of JP2006186346A5 publication Critical patent/JP2006186346A5/ja
Application granted granted Critical
Publication of JP4954537B2 publication Critical patent/JP4954537B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005347517A 2004-12-03 2005-12-01 半導体装置 Expired - Fee Related JP4954537B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005347517A JP4954537B2 (ja) 2004-12-03 2005-12-01 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004351096 2004-12-03
JP2004351096 2004-12-03
JP2005347517A JP4954537B2 (ja) 2004-12-03 2005-12-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2006186346A JP2006186346A (ja) 2006-07-13
JP2006186346A5 true JP2006186346A5 (enExample) 2008-12-11
JP4954537B2 JP4954537B2 (ja) 2012-06-20

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Family Applications (1)

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JP2005347517A Expired - Fee Related JP4954537B2 (ja) 2004-12-03 2005-12-01 半導体装置

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JP (1) JP4954537B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4974613B2 (ja) * 2006-08-29 2012-07-11 株式会社日立製作所 Ｉｃメモリ並びにｉｃメモリ用のアクセス装置及び正当性検証方法
EP2084745A4 (en) * 2006-11-29 2012-10-24 Semiconductor Energy Lab DEVICE AND METHOD FOR THE PRODUCTION THEREOF
JP2008166420A (ja) * 2006-12-27 2008-07-17 Semiconductor Energy Lab Co Ltd 半導体装置
US8053253B2 (en) * 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11329064B2 (en) * 2020-06-16 2022-05-10 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
JP2021195161A (ja) * 2020-06-16 2021-12-27 パナソニックＩｐマネジメント株式会社 飲料供給装置
CN112786785B (zh) * 2021-01-11 2022-09-02 季华实验室 一种超薄一维有机单晶阵列薄膜及其制备方法和应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239664A (ja) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd 電気的記憶装置
JP3090198B2 (ja) * 1997-08-21 2000-09-18 日本電気株式会社 半導体装置の構造およびその製造方法
JP3217326B2 (ja) * 1999-03-19 2001-10-09 富士通株式会社 電磁波シールド構造を有する強誘電体メモリ
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
TWI281748B (en) * 2001-12-18 2007-05-21 Matsushita Electric Industrial Co Ltd Non-volatile memory
JP2003229538A (ja) * 2002-02-05 2003-08-15 Matsushita Electric Ind Co Ltd 不揮発メモリとその製造方法
JP4239693B2 (ja) * 2002-06-07 2009-03-18 三菱化学株式会社 情報記憶デバイスと、この情報記憶デバイスを用いた情報記憶・再生方法
JP2004128471A (ja) * 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法

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