JP2006186346A5 - - Google Patents

Claims (14)

An organic memory having a memory cell array including a plurality of memory cells;
A control circuit for controlling the organic memory ;
Has an antenna, a,
Wherein a plurality of memory cells Waso respectively, a transistor and a memory element,
The storage element, possess a first conductive layer, an organic compound layer, a second conductive layer, and
The second conductive layer is common to memory elements included in the plurality of memory cells and is provided in a linear shape . An organic memory having a memory cell array including a plurality of memory cells;
A control circuit for controlling the organic memory ;
Has an antenna, a,
Wherein a plurality of memory cells Waso respectively, a transistor and a memory element,
The storage element has a first conductive layer, an organic compound layer, a second conductive layer, and
The second conductive layer is common to storage elements included in the plurality of memory cells, and is provided in a linear shape.
Wherein at least one of the first conductive layer and the second conductive layer, a semiconductor device characterized by having a light-transmitting property. In claim 2,
The semiconductor device is characterized in that the organic compound layer is provided using a material whose electrical resistance changes when irradiated with light. In claim 1 or claim 2,
The semiconductor device is characterized in that the organic compound layer is provided using a material whose electric resistance is changed by generating a potential difference between the first conductive layer and the second conductive layer. In claim 1 or claim 2 ,
The organic compound layer, wherein a provided using a material that electrical resistivity I by the heating to Turkey changes. In any one of Claims 1 thru | or 5,
The semiconductor device, wherein the second conductive layer is provided on the same plane or a plane parallel to a plane where the antenna is provided. In any one of Claims 1 thru | or 6,
The semiconductor device, wherein the second conductive layer is provided in a comb shape. In any one of Claims 1 thru | or 6,
The semiconductor device, wherein the second conductive layer is a plurality of conductive linear conductive layers. In any one of Claims 1 thru | or 6,
The semiconductor device, wherein the second conductive layer is provided in a ladder shape. In any one of claims 1 to 9,
The organic compound layer, wherein a is also an electron-transporting layer is a hole transport layer. In any one of claims 1 to 10,
D RAM (Dynamic Random Access Memory) , SRAM (Static Random Access Memory), FeRAM (Ferroelectric Random Access Memory), mask ROM (Mask Read Only Memory), PROM (Programmable Read Only Memory), EPROM (Electrically Programmable Read Only Memory) , EEPROM (Electrically Erasable Read Only Memory ), or a semiconductor device characterized by having a flash memory. In any one of claims 1 to 11,
Power circuit, a clock generation circuit, a demodulation circuit, a modulation circuit, the instruction decoder, or a semiconductor device characterized by having the encoding circuits. In any one of claims 1 to 12,
The organic memory and the antenna are provided on a glass substrate. In any one of claims 1 to 12,
The organic memory and the antenna are provided on a flexible substrate.