JP4393859B2 - Method for producing recording medium - Google Patents

Description

  The present invention relates to a card typified by an electronic card incorporating an integrated circuit such as a memory or a microprocessor (CPU), and more particularly to a transaction content recording system when the electronic card is used as a cash card.

  A magnetic card of a magnetic recording type can record only a few tens of bytes, whereas an electronic card (IC card) with a built-in semiconductor memory can record data of about 5 KB or more. In general, a much larger capacity can be secured. In addition, there is a merit that data is not read by a physical method such as putting iron on a card like a magnetic card, and stored data is not easily tampered with.

  Cards typified by electronic cards include ID cards that can be used instead of identification cards, flexible semi-hard cards such as plastic cards, and the like.

  In recent years, IC cards have become more sophisticated due to the addition of a CPU in addition to memory, and are used for cash cards, credit cards, prepaid cards, examination tickets, identification cards such as student ID cards and employee ID cards. , Commuter pass, membership card and so on. As an example of the enhancement of functionality, Japanese Patent Application Laid-Open No. 2004-228561 describes an IC card equipped with a display device that can display simple characters, numbers, and the like, and a keyboard for inputting numbers.

Japanese Patent Publication No.2-7105

  As described in Patent Document 1, by adding a function to an IC card, a new way of use becomes possible. Currently, electronic commerce using IC cards, telecommuting, telemedicine, distance education, digitization of administrative services, automatic toll collection on highways, video distribution services, etc. are being put to practical use. IC cards are considered to be used in a wide range of fields.

  As usage expands in this way, unauthorized use of IC cards has become a major problem that cannot be ignored, and how to increase the certainty of personal authentication when using IC cards is a future issue.

  One way to prevent unauthorized use is to post a photo of your face on an IC card. By posting a facial photograph, a third party can visually identify the person when using an IC card, unless the terminal is an unattended terminal device such as an ATM. Even when a security monitoring camera capable of photographing the user's face at a close distance is not installed, unauthorized use can be effectively prevented.

  However, in general, a facial photograph is transferred to an IC card by a printing method, and there is a pitfall that it can be replaced relatively easily by forgery.

  The thickness of the IC card is generally as thin as 0.7 mm. Therefore, when the area where the integrated circuit is mounted is limited, it is necessary to mount more integrated circuits having a larger circuit scale and memory capacity in the limited volume in order to increase the functionality.

  Therefore, an object of the present invention is to propose a more sophisticated IC card that can ensure security by preventing counterfeiting such as face photo replacement and can display images other than face photos.

  In the present invention, in addition to the integrated circuit, a display device thin enough to fit in the IC card is mounted in the IC card. Specifically, an integrated circuit and a display device are manufactured using the following method.

  First, a metal film is formed on the first substrate, and the surface of the metal film is oxidized to form a very thin metal oxide film of several nm. Next, an insulating film and a semiconductor film are sequentially stacked on the metal oxide film. Then, a semiconductor element used for an integrated circuit and a display device is manufactured using the semiconductor film. In this specification, in order to distinguish from the integrated circuit formed using the existing silicon wafer, the said integrated circuit used by this invention is hereafter called a thin film integrated circuit.

  In the present invention, the metal oxide film is crystallized by heat treatment performed in the process of forming the semiconductor element. Crystallization increases the brittleness of the metal oxide film, which makes it easier to peel the substrate from the semiconductor element. Note that the heat treatment performed in the process of forming the semiconductor element does not necessarily serve as the process of crystallizing the metal oxide film, but the card substrate and cover material to be bonded later, and the counter used in the liquid crystal display device When the substrate or the like is inferior in heat resistance, it is desirable to perform heat treatment before bonding them together.

  After the semiconductor element is formed, before the display element used for the display device is manufactured, the second substrate is attached so as to cover the semiconductor element, and the semiconductor element is interposed between the first substrate and the second substrate. Create a sandwiched state.

  Then, a third substrate is bonded to the side of the first substrate opposite to the side where the semiconductor element is formed in order to reinforce the rigidity of the first substrate. When the first substrate is higher in rigidity than the second substrate, the semiconductor element is less likely to be damaged when the first substrate is peeled off, and can be removed smoothly. Note that the third substrate is not necessarily bonded to the first substrate if the first substrate has sufficient rigidity when the first substrate is peeled off from the semiconductor element later.

  Then, the first substrate is peeled off from the semiconductor element together with the third substrate. By this peeling, a portion that is separated between the metal film and the metal oxide film, a portion that is separated between the insulating film and the metal oxide film, and a portion where the metal oxide film itself is separated into both are generated. In any case, the semiconductor element is peeled off from the first substrate so as to stick to the second substrate side.

  After the first substrate is peeled off, the semiconductor element is mounted on an IC card substrate (hereinafter referred to as a card substrate), and the second substrate is peeled off. Thereafter, a display element provided in the display device is manufactured. After a display element is manufactured, a semiconductor element and a substrate for protecting the display element (hereinafter referred to as a cover material) are bonded to cover the semiconductor element, an integrated circuit using the display element, and a display device. The circuit and the display device are sandwiched between the card substrate and the cover material.

  The thickness of the card substrate and the cover material is preferably set such that the total thickness does not hinder the thinning of the IC card itself, and specifically, about several hundred μm.

  In this state, the IC card may be completed, but the card substrate and the cover material may be sealed with a resin to increase the mechanical strength of the IC card.

  In addition, the display element of the display device may be manufactured after mounting or may be manufactured before mounting. In this case, the cover material may be pasted after the second substrate is peeled off, or the second substrate is stuck without peeling if the thickness of the second substrate does not matter. It may be completed as it is.

  Further, when a display element is manufactured after mounting, in the manufacturing process of the liquid crystal display device, for example, the pixel electrode of a liquid crystal cell electrically connected to a TFT which is one of semiconductor elements, or the pixel electrode is covered. The alignment film is manufactured and then mounted, and then a counter substrate that has been separately manufactured is bonded together to inject liquid crystal to complete the display device. Note that a counter electrode, a color filter, a polarizing plate, an alignment film, or the like may be prepared on the surface of the cover material and used instead of the counter substrate.

  Alternatively, a separately manufactured thin film integrated circuit may be bonded and the thin film integrated circuits may be stacked to increase the circuit scale or the memory capacity. Since the IC card of the present invention is remarkably thin as compared with a thin film integrated circuit made of a silicon wafer, more thin film integrated circuits can be stacked and mounted in a predetermined volume of the IC card. . Therefore, the circuit scale and the memory capacity can be increased while suppressing the area occupied in the layout of the thin film integrated circuit, and the IC card can be made more functional. For connection between the stacked thin film integrated circuits, a known connection method such as a flip chip method, a TAB (Tape Automated Bonding) method, a wire bonding method, or the like can be used.

  Alternatively, an integrated circuit using a silicon wafer may be mounted and connected to a thin film integrated circuit. An integrated circuit using a silicon wafer includes an inductor, a capacitor, a resistor, and the like.

  Note that a thin film integrated circuit or an integrated circuit using a silicon wafer to be stacked is not limited to a form that is directly mounted as a bare chip, but may be a form that is mounted on an interposer and packaged. The package can be not only CSP (Chip Size Package) and MCP (Multi Chip Package) but also DIP (Dual In-line Package), QFP (Quad Flat Package), and SOP (Small Outline Package). It is.

  Note that when a plurality of IC cards are formed from one large substrate, dicing is performed in the middle so that the thin film integrated circuit and the display device are separated from each other for each IC card.

  In the present invention, an integrated circuit manufactured using a silicon wafer has a thickness of about 50 μm, whereas a thin semiconductor film having a thickness of 500 nm or less is used, and the total thickness is typically 1 μm to 5 μm. Can form a remarkably thin thin film integrated circuit of about 2 μm. Further, the thickness of the display device can be set to 0.5 mm, more preferably about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm to 1.5 mm.

  In addition, since the present invention can use a large-sized glass substrate that is cheaper than a silicon wafer, thin film integrated circuits can be mass-produced at a lower cost and with a higher throughput, and production costs can be drastically reduced. be able to. In addition, since the substrate can be used repeatedly, the cost for the thin film integrated circuit can be reduced.

  In addition, unlike an integrated circuit manufactured using a silicon wafer, there is no need to perform back-grind processing that causes cracks and polishing marks, and variations in thickness are also caused by the formation of each film constituting a thin film integrated circuit. Since it depends on the variation in time, it is about several hundreds of nanometers at most, and can be remarkably reduced as compared with the variation of several to several tens of μm by the back grinding process.

  In addition, since a thin film integrated circuit and a display device can be attached to match the shape of the card substrate, the degree of freedom of the shape of the IC card is increased. Therefore, for example, the IC card can be formed in a shape having a curved surface that can be attached to a cylindrical bin or the like.

  As the display device, for example, a liquid crystal display device, a light emitting device including a light emitting element typified by an organic light emitting element in each pixel, a DMD (Digital Micromirror Device), or the like can be used. The thin film integrated circuit can be provided with a microprocessor (CPU), a memory, a power supply circuit, and other digital and analog circuits. Further, a driver circuit for the display device and a controller for generating a signal to be supplied to the driver circuit may be provided in the thin film integrated circuit.

  Note that the present invention is not limited to a card, and includes a portable recording medium having the above-described thin film integrated circuit and a display device and capable of transmitting / receiving data to / from a host.

  In the present invention, an integrated circuit manufactured using a silicon wafer has a thickness of about 50 μm, whereas a thin semiconductor film having a thickness of 500 nm or less is used, and the total thickness is typically 1 μm to 5 μm. Can form a remarkably thin thin film integrated circuit of about 2 μm. Further, the thickness of the display device can be set to 0.5 mm, more preferably about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm to 1.5 mm.

  In addition, since the present invention can use a large-sized glass substrate that is cheaper than a silicon wafer, thin film integrated circuits can be mass-produced at a lower cost and with a higher throughput, and production costs can be drastically reduced. be able to. In addition, since the substrate can be used repeatedly, the cost for the thin film integrated circuit can be reduced.

  In addition, unlike an integrated circuit manufactured using a silicon wafer, there is no need to perform back-grind processing that causes cracks and polishing marks, and variations in thickness are also caused by the formation of each film constituting a thin film integrated circuit. Since it depends on the variation in time, it is about several hundreds of nanometers at most, and can be remarkably reduced as compared with the variation of several to several tens of μm by the back grinding process.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

  FIG. 1A shows a top view of the IC card of the present invention. The IC card shown in FIG. 1A is a non-contact type that transmits and receives data to and from a reader / writer of a terminal device without contact. Reference numeral 101 denotes a card body, and 102 corresponds to a pixel portion of a display device mounted on the card body 101.

  FIG. 1B shows the configuration of the card substrate 104 sealed inside the card body 101 shown in FIG. A display device 105 and a thin film integrated circuit 106 are formed on one surface of the card substrate 104. The display device 105 and the thin film integrated circuit 106 are electrically connected by a wiring 108.

  An antenna coil 103 electrically connected to the thin film integrated circuit 106 is formed on the card substrate 104. Since the antenna coil 103 can transmit and receive data to and from the terminal device in a non-contact manner using electromagnetic induction, the IC card is less likely to be damaged by physical wear than the contact type.

  1B shows an example in which the antenna coil 103 is formed on the card substrate 104, an antenna coil that is separately manufactured may be mounted on the card substrate 104. For example, a coil formed by winding a copper wire or the like and sandwiching the copper wire between two plastic films having a thickness of about 100 μm can be used as an antenna coil.

  In FIG. 1B, only one antenna coil 103 is used for one IC card, but a plurality of antenna coils 103 may be used as shown in FIG.

  Next, a method for manufacturing a thin film integrated circuit and a display device is described. Note that in this embodiment mode, a TFT is described as an example of a semiconductor element; however, a semiconductor element included in a thin film integrated circuit and a display device is not limited to this, and any circuit element can be used. For example, in addition to the TFT, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, and the like can be typically given.

  First, as shown in FIG. 5A, a metal film 501 is formed over the first substrate 500 by a sputtering method. Here, tungsten is used for the metal film 501, and the film thickness is 10 nm to 200 nm, preferably 50 nm to 75 nm. Note that in this embodiment, the metal film 501 is directly formed over the first substrate 500; however, the metal film is covered after the first substrate 500 is covered with an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide. 501 may be formed.

Then, after the metal film 501 is formed, the oxide film 502 constituting the insulating film is formed so as to be stacked without being exposed to the air. Here, a silicon oxide film is formed as the oxide film 502 so as to have a thickness of 150 nm to 300 nm. Note that in the case where a sputtering method is used, film formation is also performed on an end surface of the first substrate 500. Therefore, in order to prevent the oxide film 502 from remaining on the first substrate 500 side at the time of peeling in a later process, the metal film 501 and the oxide film 502 formed on the end surface are subjected to O ₂ ashing. It is preferable to remove selectively.

When the oxide film 502 is formed, pre-sputtering is performed in which plasma is generated by blocking the target and the substrate with a shutter as a pre-sputtering step. Pre-sputtering is performed with Ar at a flow rate of 10 sccm and O ₂ at a flow rate of 30 sccm, the temperature of the first substrate 500 being 270 ° C., and the deposition power being 3 kW in an equilibrium state. By pre-sputtering, a very thin metal oxide film 503 having a thickness of several nm (here, 3 nm) is formed between the metal film 501 and the oxide film 502. The metal oxide film 503 is formed by oxidizing the surface of the metal film 501. Therefore, in this embodiment, the metal oxide film 503 is formed using tungsten oxide.

  Note that although the metal oxide film 503 is formed by pre-sputtering in this embodiment mode, the present invention is not limited to this. For example, oxygen or an inert gas such as Ar may be added to oxygen, and the surface of the metal film 501 may be intentionally oxidized by plasma to form the metal oxide film 503.

  Next, after an oxide film 502 is formed, a base film 504 which forms an insulating film is formed by a PCVD method. Here, a silicon oxynitride film is formed as the base film 504 so as to have a thickness of about 100 nm. Then, after the base film 504 is formed, the semiconductor film 505 is formed without being exposed to the air. The thickness of the semiconductor film 505 is 25 to 100 nm (preferably 30 to 60 nm). Note that the semiconductor film 505 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  Next, the semiconductor film 505 is crystallized by a known technique. Known crystallization methods include a thermal crystallization method using an electric furnace, a laser crystallization method using laser light, and a lamp annealing crystallization method using infrared light. Alternatively, a crystallization method using a catalytic element can be used according to the technique disclosed in Japanese Patent Application Laid-Open No. 7-130552.

  In this embodiment mode, the semiconductor film 505 is crystallized by laser crystallization. Prior to laser crystallization, thermal annealing at 500 ° C. for 1 hour is performed on the semiconductor film in order to increase the resistance of the semiconductor film to the laser. In this embodiment mode, this heat treatment increases the brittleness of the metal oxide film 503 and facilitates subsequent peeling of the first substrate. By crystallization, the metal oxide film 503 is easily broken at the grain boundary, and brittleness can be increased. In this embodiment mode, the metal oxide film 503 is preferably crystallized by heat treatment at 420 ° C. to 550 ° C. for about 0.5 to 5 hours.

By using a solid-state laser capable of continuous oscillation and irradiating laser light of the second harmonic to the fourth harmonic of the fundamental wave, a crystal having a large grain size can be obtained. For example, typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm). Specifically, laser light emitted from a continuous wave YVO ₄ laser is converted into a harmonic by a non-linear optical element to obtain laser light with an output of 10 W. There is also a method of emitting harmonics using a nonlinear optical element. Then, the semiconductor film 505 is irradiated with a laser beam that is preferably shaped into a rectangular or elliptical shape on the irradiation surface by an optical system. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / s.

  Laser crystallization may be performed by irradiating a continuous wave fundamental laser beam and a continuous wave harmonic laser beam, or a continuous wave fundamental laser beam and a pulsed harmonic laser beam. You may make it irradiate with light.

  Note that laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

  By irradiating the semiconductor film 505 with the laser light, the semiconductor film 506 with higher crystallinity is formed. Note that the semiconductor film 506 which is a polycrystalline semiconductor film may be formed in advance by a sputtering method, a plasma CVD method, a thermal CVD method, or the like.

Next, as shown in FIG. 5B, the semiconductor film is patterned to form island-shaped semiconductor films 507 and 508, and various semiconductors typified by TFTs using the island-shaped semiconductor films 507 and 508 are formed. An element is formed. Note that in this embodiment mode, the base film 504 and the island-shaped semiconductor films 507 and 508 are in contact with each other. However, depending on the semiconductor element, an electrode or an electrode may be provided between the base film 504 and the island-shaped semiconductor films 507 and 508. An insulating film or the like may be formed. For example, in the case of a bottom gate TFT which is one of semiconductor elements, a gate electrode and a gate insulating film are formed between a base film 504 and island-shaped semiconductor films 507 and 508.

  In this embodiment mode, top-gate TFTs 509 and 510 are formed using island-shaped semiconductor films 507 and 508 (FIG. 5C). Specifically, a gate insulating film 511 is formed so as to cover the island-shaped semiconductor films 507 and 508. Then, a conductive film is formed over the gate insulating film 511 and patterned to form gate electrodes 512 and 513. Further, in this embodiment mode, the antenna coil 506 is formed by patterning the conductive film. Then, using the gate electrodes 512 and 513 or a resist film formed and patterned as a mask, an impurity imparting n-type is added to the island-shaped semiconductor films 507 and 508, and the source region, the drain region, and further LDD regions and the like are formed. Note that both the TFTs 509 and 510 are n-type here, but in the case of a p-type TFT, an impurity imparting p-type conductivity is added.

  The TFTs 509 and 510 can be formed through the above series of steps. Note that a method for manufacturing a TFT is not limited to the above-described steps. The electrical connection between the antenna coil 506 and the thin film integrated circuit is not limited to the above-described form.

  Next, a first interlayer insulating film 514 is formed so as to cover the TFTs 509 and 510 and the antenna coil 506. Then, after forming contact holes in the gate insulating film 511 and the first interlayer insulating film 514, wirings 515 to 518 connected to the TFTs 509 and 510 and the antenna coil 506 through the contact holes are connected to the first interlayer insulating film 514. It forms so that it may touch.

  Through the wiring 515, the TFT 509 used in the thin film integrated circuit and the antenna coil 506 are electrically connected. Note that the antenna coil 506 is not necessarily formed using the same conductive film as the gate electrode, and may be formed using the same conductive film as the wirings 515 to 518.

  Further, the TFT 510 used as a switching element in the pixel portion of the display device is electrically connected to the wiring 518, but part of the wiring 518 also functions as a pixel electrode of a liquid crystal cell to be formed later.

  Next, a spacer 519 using an insulating film is formed. Then, an alignment film 520 is formed so as to cover the wiring 518 and the spacer 519, and a rubbing process is performed. Note that the alignment film 520 may be formed so as to overlap with the thin film integrated circuit or the antenna coil 506.

  Next, a sealing material 521 for sealing the liquid crystal is formed. Then, as shown in FIG. 6A, a liquid crystal 522 is dropped in a region surrounded by the sealant 521. Then, as illustrated in FIG. 6B, a counter substrate 523 which is separately formed is bonded using a sealant 521. A filler may be mixed in the sealing material. The counter substrate 523 has a thickness of about several hundred μm, and is formed with a counter electrode 524 made of a transparent conductive film and an alignment film 526 subjected to rubbing treatment. In addition to these, a color filter, a shielding film for preventing disclination, and the like may be formed. Further, the polarizing plate 527 is attached to a surface opposite to the surface where the counter electrode 524 of the counter substrate 523 is formed.

  A portion where the counter electrode 524, the liquid crystal 522, and the wiring 518 overlap corresponds to the liquid crystal cell 528. When the liquid crystal cell 528 is completed, the display device 529 is completed. Note that although the thin film integrated circuit 530 and the counter substrate 523 are not stacked in this embodiment mode, the counter substrate 523 and the thin film integrated circuit 530 may be stacked. In that case, in order to increase the mechanical strength of the IC card, an insulating resin may be filled between the counter substrate and the thin film integrated circuit.

  In the present embodiment, liquid crystal is sealed using a dispenser type (dropping type), but the present invention is not limited to this. A dip type (pumping type) in which liquid crystal is sealed using a capillary phenomenon after the counter substrate is bonded may be used.

  Next, as illustrated in FIG. 7A, a protective layer 531 is formed so as to cover the thin film integrated circuit 530 and the display device 529. The protective layer 531 is a material that can protect the thin film integrated circuit 530 and the display device 529 when the second substrate is attached or peeled later, and can be removed after the second substrate is peeled off. Is used. For example, the protective layer 531 can be formed by applying an epoxy-based, acrylate-based, or silicone-based resin soluble in water or alcohols over the entire surface.

  In this embodiment, a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating so as to have a film thickness of 30 μm, and after exposure for 2 minutes for temporary curing, UV light is applied from the back surface. The protective layer 531 is formed by performing exposure for 2.5 minutes and 10 minutes from the surface for a total of 12.5 minutes.

In addition, when laminating | stacking several organic resin, there exists a possibility that it may melt | dissolve partially at the time of application | coating or baking with the solvent currently used between organic resins, or adhesiveness may become high too much. Therefore, when both the first interlayer insulating film 514 and the protective layer 531 are made of an organic resin that is soluble in the same solvent, the first interlayer insulating film is removed so that the protective layer 531 can be removed smoothly in the subsequent process. It is preferable to form an inorganic insulating film (SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film) so as to cover 514.

  Next, treatment for partially reducing the adhesion between the metal oxide film 503 and the oxide film 502 or the adhesion between the metal oxide film 503 and the metal film 501 to form a part that triggers the start of peeling. To do. Specifically, pressure is locally applied from the outside along the periphery of the region to be peeled to damage a part of the metal oxide film 503 or a portion near the interface. In this embodiment, a hard needle such as a diamond pen is pressed perpendicularly near the end of the metal oxide film 503 and moved along the metal oxide film 503 with a load applied as it is. Preferably, a scriber device is used, the pushing amount is 0.1 mm to 2 mm, and the pressure is applied. In this way, by forming a portion with reduced adhesion that triggers the start of peeling before peeling, defects in the subsequent peeling step can be reduced, leading to improved yield. .

  Next, the second substrate 533 is attached to the protective layer 531 using the double-sided tape 532, and the third substrate 535 is attached to the first substrate 500 using the double-sided tape 534. Note that an adhesive may be used instead of the double-sided tape. For example, by using an adhesive that is peeled off by ultraviolet rays, it is possible to reduce the burden on the semiconductor element when the second substrate is peeled off. The third substrate 535 is attached to prevent the first substrate 500 from being damaged in a later peeling step. As the second substrate 533 and the third substrate 535, it is preferable to use a substrate having higher rigidity than the first substrate 500, such as a quartz substrate or a semiconductor substrate.

  Next, the metal film 501 and the oxide film 502 are physically peeled off. The peeling starts from a region where the adhesion of the metal oxide film 503 to the metal film 501 or the oxide film 502 is partially lowered in the previous step.

  A portion separated between the metal film 501 and the metal oxide film 503, a portion separated between the oxide film 502 and the metal oxide film 503, and a portion where the metal oxide film 503 itself is separated into both by peeling. Arise. Then, the semiconductor element (here, TFTs 509 and 510) is separated on the second substrate 533 side, and the first substrate 500 and the metal film 501 are separated on the third substrate 535 side, respectively. The peeling can be performed with a relatively small force (for example, a human force, a wind pressure of a gas blown from a nozzle, an ultrasonic wave, etc.). The state after peeling is shown in FIG.

  Next, the card substrate 540 and the oxide layer 502 to which the metal oxide film 503 is partially attached are bonded to each other with an adhesive 539 (FIG. 8A). At the time of adhesion, the adhesion between the oxide layer 502 and the card substrate 540 by the adhesive 539 is higher than the adhesion between the second substrate 533 and the protective layer 531 by the double-sided tape 532. As such, it is important to select the material for the adhesive 539.

  Examples of the adhesive 539 include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive. More preferably, it is preferable that the adhesive 539 has high thermal conductivity by containing powder or filler made of silver, nickel, aluminum, aluminum nitride.

  If the metal oxide film 503 remains on the surface of the oxide film 502, the adhesion with the card substrate 540 may be deteriorated. Therefore, the metal oxide film 503 is completely removed by etching or the like and then adhered to the card substrate. You may make it improve adhesiveness.

  Next, as illustrated in FIG. 8B, the double-sided tape 532 and the second substrate 533 are peeled from the protective layer 531 in order or simultaneously.

Then, as shown in FIG. 9A, the protective layer 531 is removed. Here, since a water-soluble resin is used for the protective layer 531, it is dissolved in water and removed. In the case where the protective layer 531 remains causes a failure, it is preferable to perform a cleaning process or an O ₂ plasma process on the surface after the removal to remove a part of the remaining protective layer 531.

  Next, as illustrated in FIG. 9B, the thin film integrated circuit 530 and the display device 529 are covered with a resin 542, and a cover material 543 for protecting the thin film integrated circuit 530 and the display device 529 is provided. Although the IC card may be completed in this state, it may be sealed with a sealing material so as to cover the card substrate 540 and the cover material 543. Further, the cover material 543 is not necessarily provided, and the card substrate 540 may be sealed with a sealing material as it is.

  Commonly used materials can be used for sealing the IC card. For example, polymer materials such as polyester, acrylic acid, polyvinyl acetate, propylene, vinyl chloride, acrylonitrile butadiene styrene resin, and polyethylene terephthalate are used. It is possible to use. Note that the pixel portion of the display device is exposed at the time of sealing, and in the case of a contact type IC card, the connection terminal is also exposed in addition to the pixel portion. By sealing, an IC card having an appearance as shown in FIG. 1A can be formed.

  By sealing with a sealing material, increase the mechanical strength of the IC card, dissipate heat generated from thin film integrated circuits and display devices, or block electromagnetic noise from circuits adjacent to the IC card. Can do.

  Note that a plastic substrate can be used for the card substrate 540, the cover material 543, and the counter substrate 523. As the plastic substrate, ARTON: JSR made of norbornene resin with a polar group can be used. Polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), poly A plastic substrate such as arylate (PAR), polybutylene terephthalate (PBT), or polyimide can be used. The card substrate 540 preferably has a high thermal conductivity of about 2 to 30 W / mK in order to diffuse the heat generated in the thin film integrated circuit and the display device.

  Note that in this embodiment mode, tungsten is used for the metal film 501, but the metal film is not limited to this material in the present invention. Any metal-containing material may be used as long as a metal oxide film 503 is formed on the surface and the substrate can be peeled off by crystallizing the metal oxide film 503. For example, TiN, WN, Mo, etc. can be used in addition to W. Further, when these alloys are used as metal films, the optimum temperature for the heat treatment during crystallization differs depending on the composition ratio. Therefore, by adjusting the composition ratio, heat treatment can be performed at a temperature that does not interfere with the manufacturing process of the semiconductor element, and options for the process of the semiconductor element are not easily limited.

  During laser crystallization, each thin film integrated circuit is formed in a region that fits in a width in a direction perpendicular to the scanning direction of the beam spot of the laser beam, so that the thin film integrated circuit has both ends of the long axis of the beam spot. Thus, a semiconductor film which is prevented from crossing an inferior crystallinity region (edge) formed at least and has almost no crystal grain boundary can be used for a semiconductor element in a thin film integrated circuit.

By the above manufacturing method, a remarkably thin thin film integrated circuit having a total film thickness of 1 μm to 5 μm, typically about 2 μm, can be formed. Further, the thickness W _DP of the display device can be set to about 0.5 mm, more preferably about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm to 1.5 mm. The thickness W _IC of the thin film integrated circuit includes not only the thickness of the semiconductor element itself, but also the thickness of the insulating film provided between the metal oxide film and the semiconductor element, and the interlayer insulating film covered after the semiconductor element is formed. The thickness of and include.

  Note that although the liquid crystal display device described in this embodiment mode is a reflective type, it may be a transmissive type as long as a backlight can be mounted. In the case of a reflective liquid crystal display device, the power consumed to display an image can be suppressed as compared with the transmissive type. In the case of a transmissive liquid crystal display device, unlike a reflective type, it is easy to recognize an image in a dark place.

  Note that the display device used in the present invention needs to have a resolution that can identify a person by a facial photograph. Therefore, if it is used instead of the ID photo, it is considered that a resolution of at least about QVGA (320 × 240) is necessary.

  Next, an example of forming a plurality of IC cards using a large substrate will be described. FIG. 2A shows a state where a display device, an antenna coil, and an integrated circuit corresponding to a plurality of IC cards are formed over a large card substrate 201. FIG. 2A corresponds to a state before the cover material is pasted using a resin after removing the protective layer. A region 202 surrounded by a broken line corresponds to one IC card. When a liquid crystal display device is used as the display device, the liquid crystal may be injected by a dispenser type or a dip type, but as shown in FIG. 2A, the liquid crystal injection port used in the dip type comes to the end of the card substrate. If it cannot be arranged like this, a dispenser type is used.

  Next, as shown in FIG. 2B, a resin 203 is applied so as to cover the integrated circuit, the display device, and the antenna coil corresponding to each IC card. In FIG. 2B, the areas to which the resin 203 is applied are separated from each other so as to correspond to each IC card, but may be applied to the entire surface.

  Next, as illustrated in FIG. 2C, the cover material 204 is attached. Then, dicing is performed along the broken line 205 to separate the IC cards from each other. Although it may be completed in this state, it may be completed by sealing with a sealing material thereafter.

  FIG. 3A is a cross-sectional view taken along dashed line A-A ′ in FIG. In the cross-sectional view shown in FIG. 3A, an integrated circuit 208 formed of a silicon wafer is provided between the card substrate 201 and the cover member 204 in addition to the thin film integrated circuit 207 and the display device 206. The integrated circuit may include a capacitor, an inductor, a resistor, and the like.

  Next, FIG. 3B is a cross-sectional view of an IC card having a structure different from that in FIG. In the IC card illustrated in FIG. 3B, a thin film integrated circuit 222 and a display device 223 are provided over a card substrate 221. In FIG. 3B, part of the substrate 224 that seals the display element of the display device is exposed in the opening provided in the cover member 225. The substrate 224 is formed of a material that transmits light. Specifically, the substrate 224 corresponds to, for example, a counter substrate in a liquid crystal display device, and corresponds to a substrate for sealing a light emitting element in a light emitting device. The cover material 225 is made of a material that does not transmit light. The card substrate 221 may also be made of a material that does not transmit light. With the above structure, light can be transmitted through only the pixel portion.

  Next, one mode of a thin film integrated circuit and a display device in a non-contact type IC card will be described. FIG. 4 is a block diagram of the thin film integrated circuit 401 and the display device 402 mounted on the IC card of the present invention.

  Reference numeral 400 denotes an input antenna coil, and reference numeral 413 denotes an output antenna coil. 403a is an input interface, and 403b is an output interface. The number of various antenna coils is not limited to the number shown in FIG.

  The input power supply voltage and various signals input from the terminal device by the input antenna coil 400 are demodulated or converted to direct current by the input interface 403a and supplied to various circuits. Various signals output from the thin film integrated circuit 401 are modulated by the output interface 403b and sent to the terminal device by the output antenna coil 413.

  A thin film integrated circuit 401 illustrated in FIG. 4 includes a CPU 404, a ROM 405, a RAM 406, an EEPROM 407, a coprocessor 408, and a controller 409.

  All processing of the IC card is controlled by the CPU 404, and various programs used in the CPU 404 are stored in the ROM 405. The coprocessor 408 is a sub processor that helps the main CPU 404 to function. The RAM 406 functions as a buffer for communication with the terminal device, and is also used as a work area for data processing. The EEPROM 407 stores data input as a signal at a predetermined address.

  Note that image data such as a face photograph is stored in the EEPROM 407 if it is stored in a rewritable state, and is stored in the ROM 405 if it is stored in a state where it cannot be rewritten. A separate memory for storing image data may be prepared.

  The controller 409 performs data processing on a signal including image data in accordance with the specifications of the display device 402 and supplies the signal to the display device 402 as a video signal. In addition, the controller 409 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and the like based on the power supply voltage and various signals input from the input interface 403 a and supplies them to the display device 402. .

  The display device 402 includes a pixel portion 410 in which a display element is provided in each pixel, a scanning line driver circuit 411 that selects a pixel provided in the pixel portion 410, and a signal that supplies a video signal to the selected pixel. A line driving circuit 412 is provided.

  FIG. 10A shows a more detailed configuration of the input interface 403a. An input interface 403a illustrated in FIG. 10A includes a rectifier circuit 420 and a demodulation circuit 421. The AC power supply voltage input from the input antenna coil 400 is rectified in the rectifier circuit 420 and supplied to various circuits in the thin film integrated circuit 401 as a DC power supply voltage. In addition, various AC signals input from the input antenna coil 400 are demodulated by the demodulation circuit 421. Various signals whose waveforms are shaped by being demodulated are supplied to various circuits in the thin film integrated circuit 401.

  FIG. 10B shows a more detailed configuration of the output interface 403b. An output interface 403b illustrated in FIG. 10B includes a modulation circuit 423 and an amplifier 424. Various signals input to the output interface 403b from various circuits in the thin film integrated circuit 401 are modulated in the modulation circuit 423, amplified or buffered in the amplifier 424, and then sent from the output antenna coil 413 to the terminal device. .

  Note that in this embodiment mode, an example in which an antenna coil is used as a non-contact type is shown; however, a non-contact type IC card is not limited to this, and data can be transmitted and received by light using a light emitting element, an optical sensor, or the like. You may make it do.

  The IC card of the present invention is not limited to a non-contact type IC card, and may be a contact type IC card. FIG. 14A shows an external view of a contact type IC card. The contact type IC card is provided with a connection terminal 1501. Data can be transmitted and received by electrically connecting the connection terminal 1501 and the reader / writer of the terminal device.

  Further, although an example in which the power supply voltage is supplied from the reader / writer of the terminal device has been described in this embodiment, the present invention is not limited to this. For example, as shown in FIG. 14B, a solar cell 1502 may be provided on the IC card. Further, an ultra-thin battery such as a lithium battery may be incorporated.

  Note that the structures of the thin film integrated circuit 401 and the display device 402 illustrated in FIGS. 4 and 10 are examples, and the present invention is not limited to this structure. The display device 402 only needs to have a function of displaying an image, and may be an active type or a passive type. The thin film integrated circuit 401 only needs to have a function of supplying a signal for controlling driving of the display device 402 to the display device 402. Moreover, you may have functions, such as GPS, for example.

  Thus, by displaying the face photograph data on the display device, it is possible to make it difficult to replace the face photograph as compared with the case where the printing method is used. Furthermore, by storing face photo data in a non-rewritable memory such as a ROM, it is possible to prevent forgery and to further ensure the security of the IC card. Also, if the ROM is broken if the IC card is forcibly disassembled, forgery can be prevented more reliably.

  Also, if a serial number is engraved on a semiconductor film or an insulating film used in a display device, for example, even if an IC card before storing image data in a ROM is illegally passed to a third party due to theft or the like It is possible to determine the distribution route to some extent from the serial number. In this case, it is more effective to mark the serial number at a position where the display device cannot be erased unless it is disassembled to such an extent that it cannot be restored.

  In addition, it is difficult to use a plastic substrate because it has low resistance to the temperature of heat treatment in the manufacturing process of the semiconductor element. However, in the present invention, a manufacturing process including heat treatment uses a glass substrate or a silicon wafer having a relatively high resistance to temperature, and after the manufacturing process is completed, the semiconductor element can be transferred onto a card substrate made of plastic. Therefore, an integrated circuit or a display device can be formed over a plastic substrate that is thinner than a glass substrate or the like. The thickness of the display device formed using the glass substrate is at most about 2 or 3 mm, whereas in the present invention, the thickness of the display device is about 0.5 mm or more by using a plastic substrate. Desirably, the thickness can be drastically reduced to about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1.5 mm or less, and high functionality of the IC card can be realized without hindering the reduction in size and weight.

  In addition, since a thin film integrated circuit can be dramatically reduced in the present invention, a thin film integrated circuit having a larger circuit scale and memory capacity can be formed by stacking thin film integrated circuits in a limited volume of an IC card. Many can be installed.

  In addition, since a thin film integrated circuit and a display device can be attached to match the shape of the card substrate, the degree of freedom of the shape of the IC card is increased. Therefore, for example, the IC card can be formed in a shape having a curved surface that can be attached to a cylindrical bin or the like.

Examples of the present invention will be described below.

Example 1
In this embodiment, a liquid crystal material used in the case where the first substrate is peeled after the liquid crystal display device is completed will be described.

  FIG. 11 is a cross-sectional view of the liquid crystal display device of this example. In a liquid crystal display device illustrated in FIG. 11A, a columnar spacer 1401 is provided in a pixel, and the columnar spacer 1401 improves adhesion between the counter substrate 1402 and the element-side substrate 1403. Accordingly, it is possible to prevent the semiconductor element other than the region overlapping with the sealant from being left on the first substrate side when the first substrate is peeled off.

  FIG. 11B is a cross-sectional view of a liquid crystal display device using a nematic liquid crystal, a smectic liquid crystal, a ferroelectric liquid crystal, or PDLC (polymer dispersion type liquid crystal) containing them in a polymer resin. By using the PDLC 1404, adhesion between the counter substrate 1402 and the element-side substrate 1403 is improved, and semiconductor elements other than the region overlapping with the sealant when the first substrate is peeled are formed on the first substrate side. It can be prevented from remaining.

(Example 2)
In this embodiment, the structure of a light emitting device mounted on an IC card of the present invention will be described.

  In FIG. 12, a base film 6001 is formed on a card substrate 6000, and a transistor 6002 is formed on the base film 6001. The transistor 6002 is covered with a first interlayer insulating film 6006, and a second interlayer insulating film 6007 and a third interlayer insulating film 6008 are stacked over the first interlayer insulating film 6006. .

  The first interlayer insulating film 6006 can be formed using a single layer or a stack of silicon oxide, silicon nitride, or silicon nitride oxide films by a plasma CVD method or a sputtering method. Alternatively, a film in which a silicon oxynitride film with a higher oxygen molar ratio than nitrogen is stacked over a silicon nitride oxide film with a higher nitrogen molar ratio than oxygen may be used as the first interlayer insulating film 6006.

  Note that when heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours) is performed after the first interlayer insulating film 6006 is formed, the active layer 6003 is formed by hydrogen contained in the first interlayer insulating film 6006. It is possible to terminate (hydrogenate) the dangling bonds of the semiconductor contained in the substrate.

  As the second interlayer insulating film 6007, an organic resin film, an inorganic insulating film, an insulating film including a Si—O bond and a Si—CHx bond formed using a siloxane-based material as a starting material, or the like can be used. In this embodiment, non-photosensitive acrylic is used. As the third interlayer insulating film 6008, a film that hardly transmits a substance that causes deterioration of the light-emitting element such as moisture or oxygen as compared with other insulating films is used. Typically, it is desirable to use, for example, a DLC film, a carbon nitride film, a silicon nitride film formed by an RF sputtering method, or the like.

In FIG. 12, CuPc having a thickness of 20 nm is added as the hole injection layer 6011, α-NPD having a thickness of 40 nm is added as the hole transport layer 6012, and DMQd is added as the light emitting layer 6013 on the anode 6010 made of TiN. Alq having a thickness of 37.5 nm _3, Alq ₃ having a film thickness of 37.5 nm as an electron transporting layer 6014, CaF ₂ film thickness 1nm as an electron injection layer 6015, a cathode formed of Al having a thickness of 10 to 30 nm 6016 Are sequentially stacked. In FIG. 12, a material that does not transmit light is used for the anode 6010, and light is transmitted with the thickness of the cathode 6016 set to 10 to 30 nm so that light emitted from the light emitting element can be obtained from the cathode 6016 side. In order to obtain light from the cathode 6016 side, there is a method of using ITO whose work function is reduced by adding Li in addition to a method of reducing the film thickness. In this embodiment, a structure of a light-emitting element that emits light from the cathode side is shown.

  The transistor 6002 is a driving transistor that controls a current supplied to the light emitting element, and is connected to the light emitting element directly or in series via another circuit element.

  The anode 6010 is formed on the third interlayer insulating film 6008. Further, an organic resin film 6018 used as a partition is formed over the third interlayer insulating film 6008. In this embodiment, an organic resin film is used as the partition. However, an inorganic insulating film, an insulating film including a Si—O bond and a Si—CHx bond formed using a siloxane-based material as the partition, and the like are used as the partition. Can do. The organic resin film 6018 has an opening 6017 in which an anode 6010, a hole injection layer 6011, a hole transport layer 6012, a light emitting layer 6013, an electron transport layer 6014, an electron injection layer 6015, and a cathode 6016 are provided. The light emitting element 6019 is formed by overlapping.

  A protective film 6020 is formed over the organic resin film 6018 and the cathode 6016. As the third interlayer insulating film 6008, the protective film 6020 is a film that is less likely to transmit a substance that causes deterioration of the light-emitting element such as moisture or oxygen than other insulating films. Typically, it is desirable to use, for example, a DLC film, a carbon nitride film, a silicon nitride film formed by an RF sputtering method, or the like. In addition, the above-described film that hardly transmits a substance such as moisture or oxygen and a film that easily allows a substance such as moisture or oxygen to pass through can be stacked to be used as a protective film.

  Further, the end of the organic resin film 6018 in the opening 6017 may be rounded so that the electroluminescent layer formed on the organic resin film 6018 partially overlaps so that there is no hole in the end. desirable. Specifically, it is desirable that the radius of curvature of the curve drawn by the cross section of the organic resin film in the opening is about 0.2 to 2 μm.

  With the above structure, the coverage of the electroluminescent layer including the hole injection layer 6011, the hole transport layer 6012, the light-emitting layer 6013, the electron transport layer 6014, and the electron injection layer 6015 to be formed later and the cathode 6016 is improved. In addition, the anode 6010 and the cathode 6016 can be prevented from being short-circuited. Further, by relaxing the stress in each of the above layers, a defect called “shrink” in which a light emitting region is reduced can be reduced, and reliability can be improved.

  In actuality, when completed up to FIG. 12, it is packaged with a protective film (laminate film, ultraviolet curable resin film, etc.) or a translucent sealing substrate that is highly airtight and less degassed so as not to be exposed to the outside air. It is preferable to enclose (enclose). At that time, in order to prevent the sealing substrate from being peeled off in the second substrate peeling step, a resin is sealed to improve the adhesion of the sealing substrate.

  Note that the light-emitting device illustrated in FIG. 12 corresponds to a state before the cover material is attached. In this embodiment, light emitted from the light emitting element 6019 is irradiated to the cover material side as indicated by an arrow. The present invention is not limited to this, and the light emitted from the light emitting element may be directed to the card substrate. In this case, the image displayed on the pixel portion is viewed from the card substrate side.

  Note that the light-emitting device of the present invention is not limited to the configuration shown in FIG.

(Example 3)
In this embodiment, an example of a specific usage method when the IC card of the present invention is used as a bank cash card will be described.

  As shown in FIG. 13, when opening an account in a financial institution such as a bank, image data of a depositor's face photo is stored in a ROM provided in a thin film integrated circuit of a cash card. By storing face photo data in the ROM, forgery such as face photo replacement can be prevented. Then, by using the cash card to the depositor, the use of the cash card is started.

  Cash cards are used for transactions at ATMs (automatic cash deposit and withdrawal machines) or counters. When a transaction such as withdrawal, deposit, or transfer is performed, details such as the deposit balance and transaction date and time are stored in the EEPROM provided in the thin film integrated circuit of the cash card.

  After this transaction, details such as the deposit balance and transaction date and time may be displayed in the pixel portion of the cash card, and it may be programmed so that the display disappears after a certain period of time. Then, at the time of this transaction, for example, all payments made without using a cash card, such as withdrawal by automatic transfer, may be recorded in the IC card, and this can be confirmed in the pixel portion.

  In addition, a bank cash card such as a debit card (R) is used, and payment is made directly from an account without exchange of cash. The balance information may be extracted and the balance displayed on the pixel portion of the IC card. When using the terminal device to display the balance, there is a fear that it may be seen by a third party from behind, but by displaying the balance on the pixel portion of the IC card, the IC card user can see it without being seen You can check your balance. And since the balance can be confirmed using the terminal device used for settlement installed in the store, in order to confirm the balance before settlement, the balance is inquired and booked at a bank counter or ATM. Complexity can be eliminated.

  The IC card of the present invention is not limited to a cash card. The IC card of the present invention may be used as a commuter pass or a prepaid card so that the balance is displayed on the pixel portion.

Example 4
In this embodiment, a photograph of a display device mounted on a plastic substrate and a CPU which is one of integrated circuits is shown.

  First, FIG. 15A shows the configuration of the card substrate of the IC card of the present invention. Reference numeral 1501 denotes a display device, 1502 denotes an integrated circuit, and 1503 corresponds to a CPU included in the integrated circuit.

  FIG. 15B shows a photograph of a display device formed over a polycarbonate substrate having a thickness of 200 μm. The display device illustrated in FIG. 15B is a light-emitting device, and a photograph is taken from the polycarbonate substrate side. Reference numeral 1504 denotes a signal line driver circuit, 1505 denotes a scanning line driver circuit, and 1506 denotes a pixel portion. FIG. 15C illustrates an enlarged view of the pixel portion 1506 of the light-emitting device illustrated in FIG. As shown in FIG. 15C, each pixel is provided with a light emitting element. The light emitted from the light emitting element is directed to the polycarbonate substrate side.

  FIG. 15D is an enlarged view of wirings electrically connected to the display device. The wirings 1507 to 1509 are each input with a clock bar signal, a clock signal, and a start pulse signal that are supplied to the scan line driver circuit 1505 provided in the display device in order. The wirings 1507 to 1509 are formed of the same conductive film as the wiring that electrically connects the TFTs used in the display device.

  FIG. 15E shows a photograph of the CPU 1503 formed over a polycarbonate substrate with a thickness of 200 μm. The photograph of the CPU 1503 shown in FIG. 15E is taken from the polycarbonate substrate side. An enlarged view of the arithmetic circuit 1510 included in the CPU 1503 is illustrated in FIG.

  As described above, by forming the integrated circuit and the display device over the plastic substrate, a flexible IC card can be formed.

(Example 5)
In this example, a cross section of a light-emitting device actually formed on a plastic substrate using transfer and a configuration thereof will be described.

  First, the sample observed in this example will be described. In this example, first, a TFT for controlling the operation of the light emitting element was transferred onto a plastic substrate made of polycarbonate. Next, a light-emitting element electrically connected to the TFT was formed, and a separately prepared plastic substrate was attached so as to overlap the previous plastic substrate with the light-emitting element interposed therebetween. In order to distinguish between the previous plastic substrate and the plastic substrate bonded later, the former is called a first plastic substrate and the latter is called a second plastic substrate. Note that an epoxy resin was used for both the adhesive used for transferring the TFT and the adhesive used for attaching the second plastic substrate.

  FIG. 16 shows a photograph of a cross section obtained by a scanning electron microscope (SEM) of the sample prepared in this example. In FIG. Reference numeral 20 denotes a first plastic substrate, no. Reference numeral 19 indicates an adhesive, No. 2 shows an adhesive, no. Reference numeral 1 denotes a second plastic substrate. No. No. 19 adhesive, and No. 19 Between the adhesive indicated by 2, a TFT and a light emitting element are formed. In addition, No. No. 1 and a second plastic substrate; In FIG. 2, it appears that a layer exists between the adhesive and the layer, when the cross section is polished for measurement, the layer is no. This corresponds to a region where the adhesive indicated by 2 is partially peeled off.

  Next, in FIG. The result of the EDX measurement performed in order to specify the composition of the 2nd plastic substrate shown by 1 is shown. In FIG. The result of the EDX measurement for specifying the composition of the first plastic substrate indicated by 20 is shown. As shown in FIGS. 17 and 20, in addition to the detection of carbon and oxygen, which are components of polycarbonate, Pt contained in a conductive film formed to prevent charge-up of the sample by an electron beam is detected. .

  Next, in FIG. The result of the EDX measurement performed in order to specify the composition of the adhesive agent shown by 2 is shown. In FIG. The result of the EDX measurement performed in order to specify the composition of the adhesive agent shown by 19 is shown. As shown in FIG. 18 and FIG. 19, in addition to the detection of carbon and oxygen as components of the epoxy resin, Pt contained in the conductive film formed to prevent the sample from being charged up by the electron beam was detected. Yes.

  Next, photographs of TFTs and light-emitting elements obtained by TEM (transmission electron microscope) of the sample prepared in this example will be described.

  FIG. 21 shows a photograph obtained by TEM of the TFT and the wiring connected to the TFT. 4001 is an adhesive made of epoxy resin, 4002 is a base film in which silicon oxide and silicon nitride oxide are sequentially laminated, 4003 is an island-like semiconductor film of the TFT, 4004 is a gate insulating film made of silicon oxide, and 4005 is TaN and W , 4006 is a first interlayer insulating film made of silicon nitride, 4007 is a second interlayer insulating film made of acrylic, 4008 is a wiring in which Ti, Al—Si, and Ti are sequentially laminated, and 4009 is Third interlayer insulating film made of silicon nitride, 4010 is a partition made of acrylic, 4011 is a silicon nitride film formed on the partition 4010, 4012 is an electroluminescent layer, 4013 is a cathode made of Al, and 4014 is an adhesive made of epoxy resin. It corresponds to.

  FIG. 22 shows a photograph of the light-emitting element obtained by TEM. In addition, the same code | symbol is attached | subjected about what was already shown in FIG. Reference numeral 4015 corresponds to an anode made of ITO. A portion where the anode 4015, the electroluminescent layer 4012, and the cathode 4013 overlap corresponds to a light emitting element.

  FIG. 23 shows a photograph of the TFT obtained by TEM. In addition, the same code | symbol is attached | subjected about what was already shown in FIG. The results of the EDX measurement performed to specify the composition of each layer shown in FIG. 23 are shown in FIGS. Note that the Ga peak detected in FIGS. 24 to 36 is considered to be Ga used for beam formation when a sample is processed by a focused ion beam processing observation apparatus (FIB).

  FIG. 24 corresponds to the result of the EDX measurement at Point 2 of the adhesive 4014 shown in FIG. As shown in FIG. 24, carbon and oxygen corresponding to the components of the epoxy resin were detected.

  FIG. 25 corresponds to the result of EDX measurement at Point 3 of the cathode 4013 shown in FIG. As shown in FIG. 25, Al was detected.

  FIG. 26 corresponds to the result of the EDX measurement at the point 4-1 of the electroluminescent layer 4012 shown in FIG. As shown in FIG. 26, carbon, oxygen, and Al corresponding to the components of the electroluminescent layer were detected.

  FIG. 27 corresponds to the result of EDX measurement at Point 5 of the silicon nitride film 4011 shown in FIG. As shown in FIG. 27, nitrogen and silicon were detected.

  FIG. 28 corresponds to the result of the EDX measurement at the point 11 of the third interlayer insulating film 4009 shown in FIG. As shown in FIG. 28, nitrogen and silicon corresponding to silicon nitride components were detected.

  FIG. 29 corresponds to the result of the EDX measurement at the point 12 of the second interlayer insulating film 4007 shown in FIG. As shown in FIG. 29, carbon and oxygen corresponding to acrylic components were detected.

  FIG. 30 corresponds to the result of the EDX measurement at the point 13 of the first interlayer insulating film 4006 shown in FIG. As shown in FIG. 30, nitrogen and silicon corresponding to silicon nitride components were detected.

  FIG. 31 corresponds to the result of the EDX measurement at the point 14 of the gate electrode 4005 shown in FIG. 32 corresponds to the result of the EDX measurement at the point 15 of the gate electrode 4005 shown in FIG. As shown in FIG. 31, W was detected in the gate electrode 4005 at the point 14. Further, as shown in FIG. 32, Ta was detected in the gate electrode 4005 at the point 15.

  FIG. 33 corresponds to the result of the EDX measurement at the point 16 of the gate insulating film 4004 shown in FIG. As shown in FIG. 33, silicon and oxygen corresponding to silicon oxide components were detected.

  FIG. 34 corresponds to the result of EDX measurement at Point 17 of the island-shaped semiconductor film 4003 illustrated in FIG. As shown in FIG. 34, silicon was detected.

  FIG. 35 corresponds to the result of the EDX measurement at the point 18 of the base film 4002 shown in FIG. As shown in FIG. 35, silicon and oxygen corresponding to silicon oxide components were detected. Note that actually, the base film 4002 has a film formed of silicon nitride oxide on a film formed of silicon oxide.

  FIG. 36 corresponds to the result of the EDX measurement at the point 19 of the adhesive 4001 shown in FIG. As shown in FIG. 36, carbon and oxygen corresponding to the components of the epoxy resin were detected.

The figure which shows the external view of the IC card of this invention, and an internal structure. The figure which shows the preparation methods of the IC card of this invention using a large sized card board. The figure which shows sectional drawing of the IC card of this invention. The block diagram of a thin film integrated circuit and a display apparatus. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. The block diagram which shows the structure of the interface for input / output. Sectional drawing of a liquid crystal display device. Sectional drawing of a light-emitting device. The figure which shows the utilization method of IC card of this invention. The figure which shows the external appearance of the IC card of this invention. A photograph of a thin film integrated circuit and a display device formed on a plastic substrate. The photograph of the cross section obtained by SEM of the sample prepared in Example 5. FIG. The figure which shows the result of the EDX measurement of Point1 in FIG. The figure which shows the result of the EDX measurement of Point2 in FIG. The figure which shows the result of the EDX measurement of Point19 in FIG. The figure which shows the result of the EDX measurement of Point20 in FIG. The photograph of the cross section obtained by TEM of the sample prepared in Example 5. The photograph of the cross section obtained by TEM of the sample prepared in Example 5. The photograph of the cross section obtained by TEM of the sample prepared in Example 5. The figure which shows the result of the EDX measurement of Point2 in FIG. The figure which shows the result of the EDX measurement of Point3 in FIG. The figure which shows the result of the EDX measurement of Point4-1 in FIG. The figure which shows the result of the EDX measurement of Point5 in FIG. The figure which shows the result of the EDX measurement of Point11 in FIG. The figure which shows the result of the EDX measurement of Point12 in FIG. The figure which shows the result of the EDX measurement of Point13 in FIG. The figure which shows the result of the EDX measurement of Point14 in FIG. The figure which shows the result of the EDX measurement of Point15 in FIG. The figure which shows the result of the EDX measurement of Point16 in FIG. The figure which shows the result of the EDX measurement of Point17 in FIG. The figure which shows the result of the EDX measurement of Point18 in FIG. The figure which shows the result of the EDX measurement of Point19 in FIG.

Claims (7)

Forming a metal film on the first substrate;
Oxide film is formed on the metal film,
Forming a polycrystalline semiconductor film on the oxide film;
A thin film integrated circuit and a display device are formed using the polycrystalline semiconductor film,
Covering the thin film integrated circuit and the display device with a first resin;
A second substrate is bonded onto the first resin,
Peeling off the metal film and the oxide film;
The first plastic substrate is bonded to the portion of the oxide film from which the metal film has been peeled off via an adhesive,
Peeled and the second substrate and the first resin,
Removing the first resin;
Covering the thin film integrated circuit and the display device on the first plastic substrate with a second resin,
A method for manufacturing a recording medium, wherein a second plastic substrate is bonded to the second resin. Forming a metal film on the first substrate;
Oxide film is formed on the metal film,
Forming a polycrystalline semiconductor film on the oxide film;
A thin film integrated circuit and a display device are formed using the polycrystalline semiconductor film,
Forming a conductive film on the thin film integrated circuit;
An antenna is formed using the conductive film,
Covering the antenna, the thin film integrated circuit, and the display device with a first resin,
A second substrate is bonded onto the first resin,
Peeling off the metal film and the oxide film;
The first plastic substrate is bonded to the portion of the oxide film from which the metal film has been peeled off via an adhesive,
Peeled and the second substrate and the first resin,
Removing the first resin;
Covering the thin film integrated circuit and the display device on the first plastic substrate with a second resin,
A method for manufacturing a recording medium, wherein a second plastic substrate is bonded to the second resin. In claim 1 or claim 2 ,
The method for producing a recording medium, wherein the polycrystalline semiconductor film is formed by forming a semiconductor film over the oxide film and crystallizing the semiconductor film . In claim 3,
The method for manufacturing a recording medium, wherein the semiconductor film formed over the oxide film has a thickness of 25 nm to 100 nm. In claim 3 or claim 4,
A method for manufacturing a recording medium, wherein a heat treatment is performed on a semiconductor film formed over the oxide film. In any one of Claims 1 to 5,
A method for manufacturing a recording medium, comprising forming a metal oxide film by oxidizing a surface of the metal film. In any one of Claims 1 thru | or 6,
A method for manufacturing a recording medium, wherein W, TiN, WN, or Mo is used as the metal film.