JP2005182551A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005182551A5 JP2005182551A5 JP2003423840A JP2003423840A JP2005182551A5 JP 2005182551 A5 JP2005182551 A5 JP 2005182551A5 JP 2003423840 A JP2003423840 A JP 2003423840A JP 2003423840 A JP2003423840 A JP 2003423840A JP 2005182551 A5 JP2005182551 A5 JP 2005182551A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- integrated circuit
- film transistor
- nonvolatile memory
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423840A JP4481632B2 (ja) | 2003-12-19 | 2003-12-19 | 薄膜集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423840A JP4481632B2 (ja) | 2003-12-19 | 2003-12-19 | 薄膜集積回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005182551A JP2005182551A (ja) | 2005-07-07 |
| JP2005182551A5 true JP2005182551A5 (enExample) | 2007-02-08 |
| JP4481632B2 JP4481632B2 (ja) | 2010-06-16 |
Family
ID=34784211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003423840A Expired - Fee Related JP4481632B2 (ja) | 2003-12-19 | 2003-12-19 | 薄膜集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4481632B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120039764A (ko) | 2004-07-14 | 2012-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 무선 프로세서, 무선 메모리, 정보 처리 시스템 |
| JP5303096B2 (ja) * | 2004-07-14 | 2013-10-02 | 株式会社半導体エネルギー研究所 | プロセッサ |
| US20070126556A1 (en) * | 2005-12-07 | 2007-06-07 | Kovio, Inc. | Printed radio frequency identification (RFID) tag using tags-talk-first (TTF) protocol |
| JP2007201437A (ja) * | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2007226578A (ja) * | 2006-02-23 | 2007-09-06 | Chugoku Electric Power Co Inc:The | 計量器用表示装置及び計量器並びに計量器検針用ユニット |
| JP2007294082A (ja) * | 2006-03-31 | 2007-11-08 | Semiconductor Energy Lab Co Ltd | Nand型不揮発性メモリのデータ消去方法 |
| US7554854B2 (en) | 2006-03-31 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for deleting data from NAND type nonvolatile memory |
| KR100843887B1 (ko) * | 2006-06-02 | 2008-07-03 | 주식회사 하이닉스반도체 | 집적회로 및 그 정보 기록 방법 |
| FR2906078B1 (fr) * | 2006-09-19 | 2009-02-13 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue |
| US9814387B2 (en) * | 2013-06-28 | 2017-11-14 | Verily Life Sciences, LLC | Device identification |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007290A (ja) * | 1999-06-24 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置、半導体装置の製造方法、および、通信方法 |
| JP2003203994A (ja) * | 2001-10-22 | 2003-07-18 | Mitsubishi Electric Corp | 半導体装置、ロボット、宝籤の運営方法、記録媒体、ソフトウェアの供給方法、電子透かし方法、被認識物の認識方法、位置検出方法、データベース、位置情報提供方法、並びに環境状況送信装置 |
| JP4159779B2 (ja) * | 2001-12-28 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| JP2003288573A (ja) * | 2002-03-27 | 2003-10-10 | Seiko Epson Corp | Icカード及びその製造方法 |
-
2003
- 2003-12-19 JP JP2003423840A patent/JP4481632B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7688208B2 (ja) | 半導体装置 | |
| US7554873B2 (en) | Three-dimensional memory devices and methods of manufacturing and operating the same | |
| TWI318786B (en) | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements | |
| EP1475805A3 (en) | Semiconductor memory device | |
| EP1150302A4 (en) | INTEGRATED SEMICONDUCTOR SWITCHING AND NON-VOLATILE MEMORY ELEMENT | |
| TW200518318A (en) | Array of nonvolatile memory cells wherein each cell has two conductive floating gates | |
| CA2315434A1 (en) | Semiconductor device | |
| KR900000916A (ko) | 불휘발성 메모리 회로장치 | |
| CN102754163A (zh) | 半导体器件 | |
| JP2005182551A5 (enExample) | ||
| JP2005038557A5 (enExample) | ||
| US20200013434A1 (en) | Non-volatile memory with capacitors using metal under pads | |
| TW200715537A (en) | Non-volatile memory cell and integrated circuit | |
| US11508654B2 (en) | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | |
| CN108431894B (zh) | 半导体存储装置 | |
| JP2003152118A5 (enExample) | ||
| EP1441363A3 (en) | Ferroelectric resistor non-volatile memory array | |
| TWI533310B (zh) | The operation of low cost electronic erasure rewritable read only memory array | |
| JP2001167584A (ja) | 半導体メモリ装置 | |
| JP2006086286A5 (enExample) | ||
| US9640229B2 (en) | Memory circuit and layout structure of a memory circuit | |
| JP2006186346A5 (enExample) | ||
| CN209980790U (zh) | 存储器及电子设备 | |
| JP5072545B2 (ja) | 半導体装置、半導体装置のデータ書き込み方法、及び半導体装置のデータ読み出し方法 | |
| JPH07263638A (ja) | MOS型コンデンサ、Vppスイッチ回路、チャージポンプ回路、EEPROM、マイクロコンピュータ及びICカード |